Blue like Diamond Light Emitting Devices to be Massproduced

1989 ◽  
Vol 162 ◽  
Author(s):  
M. Kadono ◽  
S. Hayashi ◽  
N. Hirose ◽  
K. Itoh ◽  
T. Inushima ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Device ◽  
Electronic Devices ◽  
Chemical Properties ◽  
Wide Band ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Device Applications ◽  
Diamond Thin Films

Recently, there has been considerable interest in electronic device applications of diamond thin films. The chemical properties of diamond is stable. So diamond thin films become very useful if they are used for electronic devices. We consider diamond thin films as blue like emitting devices because diamond has a wide band gap(about 5.5eV). Some light emitting devices have been known [1]. First of all we have been trying to deposit diamond thin films on the large areas. If they deposit on the large areas, light emitting devices may be massproduced.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Wide band gap of Strontium doped Hafnium oxide nanoparticles for opto-electronic device applications – Synthesis and characterization

2017 ◽  
Vol 186 ◽  
pp. 42-44 ◽  
Author(s):  
J. Manikantan ◽  
H.B. Ramalingam ◽  
B. Chandar Shekar ◽  
B. Murugan ◽  
R. Ranjith Kumar ◽  
...  
Keyword(s):  
Band Gap ◽  
Hafnium Oxide ◽  
Electronic Device ◽  
Wide Band ◽  
Synthesis And Characterization ◽  
Oxide Nanoparticles ◽  
Wide Band Gap ◽  
Device Applications

scholarly journals A highly efficient wide-band-gap host material for blue electrophosphorescent light-emitting devices

2007 ◽  
Vol 91 (23) ◽  
pp. 233501 ◽  
Author(s):  
Dong Ryeol Whang ◽  
Youngmin You ◽  
Se Hun Kim ◽  
Won-Ik Jeong ◽  
Young-Seo Park ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Host Material ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Highly Efficient

Enhancement in visible luminescence from nanocomposite ZnO-SiOx thin films due to annealing

2014 ◽  
Vol 07 (02) ◽  
pp. 1450007 ◽  
Author(s):  
V. V. Siva Kumar ◽  
D. Kanjilal
Keyword(s):  
Thin Films ◽  
Size Distribution ◽  
High Vacuum ◽  
Wide Band ◽  
Silica Matrix ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Zno Nanocrystals ◽  
Transmission Electron ◽  
Pl Emission

The annealing induced enhancement in visible photoluminescence (PL) from nanocomposite (nc) ZnO – SiO x thin films was investigated. Nc ZnO – SiO x thin films consisting of ZnO nanocrystals in silica matrix were grown by depositing the films using radio frequency (rf) reactive co-sputtering and post-annealing them at temperatures of 350°C and 500°C in high vacuum and air. These films were characterized by Fourier transform infrared (FTIR), (PL) spectroscopy and UV–Vis spectrophotometry measurements. Thin films were also deposited on transmission electron microscopy (TEM) grids in almost identical conditions. The TEM measurement of the thin film deposited on TEM grid shows the formation of ZnO nanocrystals with a size distribution from 3.0 nm to 6.8 nm (+/-0.2 nm) in silica matrix. The UV–Vis spectra of the films show absorption features of ZnO and Zn 2 SiO 4 phases in the films. The visible PL emission intensity and peak width increased in the annealed films. The results suggest increase in the number and size distribution of the ZnO nanocrystals in silica matrix due to the annealing resulting in increase in visible PL emission. The results of vacuum annealed films indicate that these films can be useful in the development of wide band visible light emitting devices using this material.

MOVPE Growth of Wide Band-Gap II—VI Compounds for Near-UV and Deep-Blue Light Emitting Devices

1998 ◽  
Vol 33 (2) ◽  
pp. 183-195 ◽  
Author(s):  
N. Lovergine ◽  
P. Prete ◽  
G. Leo ◽  
L. Calcagnile ◽  
R. Cingolani ◽  
...  
Keyword(s):  
Band Gap ◽  
Blue Light ◽  
Wide Band ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Deep Blue ◽  
Movpe Growth

Growth and Characterization of Znsete Epilayers and Superlattices

1990 ◽  
Vol 198 ◽  
Author(s):  
M. C. Phillips ◽  
Y. Rajakarunanayake ◽  
J. O. Mccaldin ◽  
R. H. Miles ◽  
D. H. Chow ◽  
...  
Keyword(s):  
Equilibrium Phase ◽  
Wide Band ◽  
Alloy System ◽  
Miscibility Gap ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
Light Emitting ◽  
X Ray ◽  
Light Emitting Devices ◽  
Pl Spectra

ABSTRACTLittle has been published about Te-rich ZnSexTel−x grown at low temperatures, in spite of some successes in the fabrication of wide band gap light emitting devices from ZnSeTe alloys grown at higher temperatures. We present x-ray diffraction and photoluminescence (PL) spectra for ZnSeTe epilayers and ZnSeTe/ZnTe superlattices grown by molecular beam epitaxy (MBE). These we compare with measurements on ZnTe, ZnSe and CdZnTe epilayers and on CdZnTe/ZnTe superlattices grown under similar conditions and also with data published for ZnSeTe alloys grown at high temperatures. Equilibrium phase diagrams for the ZnSeTe alloy system suggest a large miscibility gap at MBE growth temperatures; this may account for some unusual features in the (PL) spectra and for large line widths in the x-ray data. In spite of these possible miscibility problems, we find that ZnSeTe alloys luminesce brightly.

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