Growth and Characterization of Znsete Epilayers and Superlattices

1990 ◽  
Vol 198 ◽  
Author(s):  
M. C. Phillips ◽  
Y. Rajakarunanayake ◽  
J. O. Mccaldin ◽  
R. H. Miles ◽  
D. H. Chow ◽  
...  
Keyword(s):  
Equilibrium Phase ◽  
Wide Band ◽  
Alloy System ◽  
Miscibility Gap ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
Light Emitting ◽  
X Ray ◽  
Light Emitting Devices ◽  
Pl Spectra

ABSTRACTLittle has been published about Te-rich ZnSexTel−x grown at low temperatures, in spite of some successes in the fabrication of wide band gap light emitting devices from ZnSeTe alloys grown at higher temperatures. We present x-ray diffraction and photoluminescence (PL) spectra for ZnSeTe epilayers and ZnSeTe/ZnTe superlattices grown by molecular beam epitaxy (MBE). These we compare with measurements on ZnTe, ZnSe and CdZnTe epilayers and on CdZnTe/ZnTe superlattices grown under similar conditions and also with data published for ZnSeTe alloys grown at high temperatures. Equilibrium phase diagrams for the ZnSeTe alloy system suggest a large miscibility gap at MBE growth temperatures; this may account for some unusual features in the (PL) spectra and for large line widths in the x-ray data. In spite of these possible miscibility problems, we find that ZnSeTe alloys luminesce brightly.

Impact of various reactant concentrations on the morphology and photoluminescence property of synthetic ZnO nanobelts

2017 ◽  
Vol 31 (35) ◽  
pp. 1750337
Author(s):  
Guoxuan Qin ◽  
Yanan Wang ◽  
Shentong Mo ◽  
Xing Fu ◽  
Hui Wang ◽  
...  
Keyword(s):  
Photoluminescence Property ◽  
Xrd Analysis ◽  
Maximum Temperature ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
X Ray ◽  
Light Emitting Devices ◽  
Uv Emission ◽  
Zno Nanomaterials ◽  
Fluorescence Spectrometer

In this paper, ZnO nanobelts have been partially high-quality synthesized employing diverse reactant mass ratios between zinc acetate [Zn(AC)2] and polyvinyl alcohol (PVA) without any catalyst. The maximum temperature required for the whole reaction process is no more than 650[Formula: see text]C. The morphologies of ZnO nanomaterials fabricated from distinct reactant concentrations have been systematically investigated by means of field-emission scanning electron microscopy (FESEM). X-ray diffraction (XRD) analysis identifies that ZnO nanobelts exhibit a typical wurtzite structure. Through fluorescence spectrometer, the photoluminescence (PL) spectra generated by ZnO nanomaterials corresponding to different reactant concentrations have disparate peak intensities and luminescence wavelengths. This phenomenon indicates that novel-synthesized ZnO nanomaterial shows great potential in changing the optical properties of light-emitting devices. In addition, synthetic ZnO nanobelts exhibit excellent UV emission capability.

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan ◽  
M. Razeghi
Keyword(s):  
Epitaxial Growth ◽  
Substrate Surface ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
High Quality ◽  
Microstructural Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

Stress origin and relaxation in epitaxial AlN thin films on SiC

2001 ◽  
Vol 696 ◽  
Author(s):  
Ravi Bathe ◽  
R.D. Vispute ◽  
Daniel Habersat ◽  
R. P. Sharma ◽  
T. Venkatesan ◽  
...  
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Highly Strained

AbstractWe have investigated the epitaxy, surfaces, interfaces, and defects in AlN thin films grown on SiC by pulsed laser deposition. The stress origin, evolution, and relaxation in these films is reported. The crystalline structure and surface morphology of the epitaxially grown AlN thin films on SiC (0001) substrates have been studied using x-ray diffraction (θ–2θ, ω, and Ψ scans) and atomic force microscopy, respectively. The defect analysis has been carried out by using Rutherford backscattering spectrometry and ion channeling technique. The films were grown at various substrate temperatures ranging from room temperature to 1100 °C. X-ray diffraction measurements show highly oriented AlN films when grown at temperatures of 750- 800 °C, and single crystals above 800 °C. The films grown in the temperature range of 950 °C to 1000 °C have been found to be highly strained, whereas the films grown above 1000 °C were found to be cracked along the crystallographic axes. The results of stress as a function of growth temperature, thermal mismatch, growth mode, and buffer layer thickness will be presented, and the implications of these results for wide band gap power electronics will be discussed.

Structural Studies Of Epitaxial CdF2 Layers on Si(111)

1996 ◽  
Vol 441 ◽  
Author(s):  
A. Yu. Khilko ◽  
R. N. Kyutt ◽  
G. N. Mosina ◽  
N. S. Sokolov ◽  
Yu. V. Shusterman ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Optimal Growth ◽  
Misfit Strain ◽  
X Ray Diffraction ◽  
Optimal Growth Temperature ◽  
Light Emitting ◽  
X Ray ◽  
Light Emitting Devices ◽  
Transmission Electron

AbstractEpitaxial CdF2 layers, which may be used in light-emitting devices integrated with silicon, were grown by Molecular Beam Epitaxy (MBE). Characterization of the layers by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) showed that optimal growth temperature lies in the range 60–80°C. The sticking coefficient of CdF2 molecules was found to decrease at temperatures above 100°C. Different modes of misfit strain relaxation were observed above and below that temperature.

Nanostructure Assembly of Indium Sulphide Quantum Dots and Their Characterization

2008 ◽  
Vol 8 (2) ◽  
pp. 689-694 ◽  
Author(s):  
B. Vigneashwari ◽  
V. Ravichandran ◽  
P. Parameswaran ◽  
S. Dash ◽  
A. K. Tyagi
Keyword(s):  
Quantum Dots ◽  
Colloidal Suspension ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Hydrothermal Route ◽  
Wide Band Gap ◽  
X Ray ◽  
Glass Substrates ◽  
Series Of Experiments ◽  
Indium Sulphide

Nanocrystals (∼5 nm) of the semiconducting wide band gap material β-In2S3 obtained by chemical synthesis through a hydrothermal route were characterized for phase and compositional purity. These nanoparticles exhibited quantum confinement characteristics as revealed by a blue-shifted optical absorption. These quantum dots of β-In2S3 were electrically driven from a monodisperse colloidal suspension on to conducting glass substrates by Electophoretic Deposition (EPD) technique and nanostructural thin films were obtained. The crystalline and morphological structures of these deposits were investigated by X-ray diffraction and nanoscopic techniques. We report here that certain interesting nanostructural morphologies were observed in the two-dimensional quantum dot assemblies of β-In2S3. The effect of the controlling parameters on the cluster growth and deposit integrity was also systematically studied through a series of experiments and the results are reported here.

scholarly journals A highly efficient wide-band-gap host material for blue electrophosphorescent light-emitting devices

2007 ◽  
Vol 91 (23) ◽  
pp. 233501 ◽  
Author(s):  
Dong Ryeol Whang ◽  
Youngmin You ◽  
Se Hun Kim ◽  
Won-Ik Jeong ◽  
Young-Seo Park ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Host Material ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Highly Efficient
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