Wide band gap of Strontium doped Hafnium oxide nanoparticles for opto-electronic device applications – Synthesis and characterization

2017 ◽  
Vol 186 ◽  
pp. 42-44 ◽  
Author(s):  
J. Manikantan ◽  
H.B. Ramalingam ◽  
B. Chandar Shekar ◽  
B. Murugan ◽  
R. Ranjith Kumar ◽  
...  
Keyword(s):  
Band Gap ◽  
Hafnium Oxide ◽  
Electronic Device ◽  
Wide Band ◽  
Synthesis And Characterization ◽  
Oxide Nanoparticles ◽  
Wide Band Gap ◽  
Device Applications

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Synthesis and characterization of the wide band-gap compound Pr2Te4O11

2003 ◽  
Vol 354 (1-2) ◽  
pp. 115-119 ◽  
Author(s):  
Ismail Ijjaali ◽  
Christine Flaschenriem ◽  
James A. Ibers
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Synthesis And Characterization ◽  
Wide Band Gap

Phase control for indium oxide nanoparticles

Nanoscale ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 4038-4050
Author(s):  
Ida Gjerlevsen Nielsen ◽  
Sanna Sommer ◽  
Bo Brummerstedt Iversen
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Oxide Nanoparticles ◽  
Wide Band Gap ◽  
X Ray ◽  
X Ray Scattering ◽  
Transformation Mechanisms ◽  
Indium Oxides ◽  
Wide Band Gap Semiconductors

The indium oxides, c-In2O3, h-In2O3, InOOH and In(OH)3, have been studied by in situ X-ray scattering to determine the formation and transformation mechanisms in this system of important wide band gap semiconductors.

Blue like Diamond Light Emitting Devices to be Massproduced

1989 ◽  
Vol 162 ◽  
Author(s):  
M. Kadono ◽  
S. Hayashi ◽  
N. Hirose ◽  
K. Itoh ◽  
T. Inushima ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Device ◽  
Electronic Devices ◽  
Chemical Properties ◽  
Wide Band ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Device Applications ◽  
Diamond Thin Films

Recently, there has been considerable interest in electronic device applications of diamond thin films. The chemical properties of diamond is stable. So diamond thin films become very useful if they are used for electronic devices. We consider diamond thin films as blue like emitting devices because diamond has a wide band gap(about 5.5eV). Some light emitting devices have been known [1]. First of all we have been trying to deposit diamond thin films on the large areas. If they deposit on the large areas, light emitting devices may be massproduced.

scholarly journals Wide band-gap oxide nanoparticles as potential drug carriers

2017 ◽  
Vol 73 (10) ◽  
pp. 657-660 ◽  
Author(s):  
Waldemar Lipiński ◽  
Jarosław Kaszewski ◽  
Zdzisław Gajewski ◽  
Marek Godlewski ◽  
Michał M. Godlewski
Keyword(s):  
Drug Delivery ◽  
Band Gap ◽  
Drug Delivery Systems ◽  
Rapid Development ◽  
Metal Oxide Nanoparticles ◽  
Wide Band ◽  
Drug Carriers ◽  
Delivery Systems ◽  
Oxide Nanoparticles ◽  
Wide Band Gap

Recent decades have brought rapid development in the field of nanotechnology, which has led to applications of nanoparticles in many industries. Unique properties of nanoparticles and their biocompatibility increase their potential as drug carriers in drug-delivery systems. Prof. Marek Godlewski’s team from the Institute of Physics PAS has developed wide band-gap metal oxide nanoparticles doped with rare-earth metals for applications as fluorescent markers. The potential of those nanoparticles to cross the closed gut barrier after alimentary application has prompted their use in drug delivery systems. In this study, we show that after conjugation with a model bioactive substance, lectin (Phaseolus vulgaris), these nanoparticles retained their advantageous properties and, following oral administration (10 mg/ml in RO, 0.3 ml/mouse), entered a variety of organs in the mouse model. Internal organs collected at key time points were analysed under a scanning cytometer and a confocal microscope. The results show that the conjugation reduced, but did not completely abolish, the capacity of nanoparticles to penetrate physiological barriers (intestinal, blood-brain barrier) in the organism.

Fabrication of wide band-gap CuGaSe2 solar cells for tandem device applications by sputtering from a ternary target and post selenization treatment

2018 ◽  
Vol 230 ◽  
pp. 128-131 ◽  
Author(s):  
Yaowei Wei ◽  
Daming Zhuang ◽  
Ming Zhao ◽  
Ning Zhang ◽  
Xinping Yu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Device Applications

Introduction Of Ions Into Wide Band Gap Semiconductors

1997 ◽  
Vol 483 ◽  
Author(s):  
H. Paul Maruska ◽  
Mike Lioubtchenko ◽  
Thomas G. Tetreault ◽  
Marek Osinskif ◽  
Stephen J. Pearton ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Band Gap ◽  
Elevated Temperatures ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
New Device ◽  
Device Applications ◽  
Wide Band Gap Semiconductors ◽  
Junction Diode

AbstractWith great attention now being given to the wide band gap materials for electronic and optoelectronic device applications, there is interest in using ion implantation to introduce dopants into selected regions of devices. Work on ion implantation into SiC and the III-V nitrides is reviewed, new device concepts are given, and recent results are presented. These include SiC implantations at elevated temperatures, a GaN sample implanted with Si having an electron mobility after annealing of 106 cm2/V-s, and a novel GaN np junction diode created by implantation.

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