Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

2015 ◽  
Vol 117 (17) ◽  
pp. 175307 ◽  
Author(s):  
Rene Wutzler ◽  
Lars Rebohle ◽  
Slawomir Prucnal ◽  
Felipe L. Bregolin ◽  
Rene Hübner ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Ion Implantation ◽  
Liquid Phase Epitaxy ◽  
Flash Lamp

Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

2005 ◽  
Vol 483-485 ◽  
pp. 213-216 ◽  
Author(s):  
Jörg Pezoldt ◽  
Efstathios K. Polychroniadis ◽  
Thomas Stauden ◽  
Gernot Ecke ◽  
Thierry Chassagne ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Mass Transport ◽  
Liquid Phase Epitaxy ◽  
Silicon Substrate ◽  
Flash Lamp ◽  
Nucleation Behavior ◽  
Silicon Melt ◽  
Short Time ◽  
Carbon Additions ◽  
Lamp Processing

The influence of the different additions to the melt on the nucleation behavior during short time flash lamp processing was investigated. It was observed that germanium and carbon additions to the silicone melt led to an increase of the mass transport to the growing surface and to an increase of the nuclei size. In the case of germanium additions to the silicon melt an incorporation of germanium in the silicon substrate was observed.

Amorphization of Garnet by Ion Implantation

1983 ◽  
Vol 27 ◽  
Author(s):  
A. M. Guzman ◽  
T. Yoshiie ◽  
C. L. Bauer ◽  
M. H. Kryder
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Liquid Phase ◽  
Ion Implantation ◽  
Liquid Phase Epitaxy ◽  
Atomic Displacement ◽  
Transmission Electron ◽  
Continuous Band ◽  
Subsequent Propagation

ABSTRACTAmorphization by ion implantation has been investigated in films of (SmYGdTm)3Ga0.4Fe4.6O12 garnet by transmission electron microscopy, incorporating a special cross-sectioning technique. These films were produced by liquid phase epitaxy on (111) garnet substrates and subsequently implanted with ions of deuterium at 60 keV and doses ranging from 0.50 to 4.5×1016 D2+/cm2 and ions of oxygen at 110 keV and doses ranging from 0.95 to 8.6×1014O+/cm2. The amorphization process proceeds in separate stages involving the formation of isolated amorphous regions, merging of these regions into a continuous band and subsequent propagation of the amorphous band toward the implanted surface. Details of these processes are interpreted in terms of various atomic displacement mechanisms.

Ion-Implantation Getiering of Impurities in CdTe

1989 ◽  
Vol 161 ◽  
Author(s):  
M. H. Jin ◽  
K. M. James ◽  
C. E. Jones ◽  
J. L. Merz
Keyword(s):  
Liquid Phase ◽  
Ion Implantation ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
Annealing Behavior ◽  
Ternary Compounds ◽  
Implantation Damage ◽  
Anneal Time

ABSTRACTThis is the first reported use of ion-implantation damage gettering of impurities in CdTe to provide high-quality substrates for the epitaxial growth of appropriate binary or ternary compounds, or for related applications. We describe the results of photoluminescence (PL) measurements performed on samples of Bridgeman-grown CdTe to study both the annealing behavior and gettering effects in this material. From the PL results, it was found that impurity gettering occurs at temperatures at which liquid phase epitaxy take place (∼500°C) so that these two fabrication procedures are compatible. It was also found that the optimum anneal time at this temperature is four hours.

III–V nanocrystal formation in ion-implanted Ge and Si via liquid phase epitaxy during short-time flash lamp annealing

2016 ◽  
Vol 42 ◽  
pp. 166-169 ◽  
Author(s):  
Rene Wutzler ◽  
Lars Rebohle ◽  
Slawomir Prucnal ◽  
René Hübner ◽  
Stefan Facsko ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Flash Lamp ◽  
Nanocrystal Formation ◽  
Short Time ◽  
Ion Implanted

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

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