Solid Phase Epitaxy of GexSi1-x Alloys on [100] Si

1989 ◽  
Vol 160 ◽  
Author(s):  
Q. Z. Hong ◽  
P. Revesz ◽  
A. J. Yu ◽  
J. W. Mayer ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Activation Energy ◽  
Composition Range ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Minimum Yield

AbstractSolid phase epitaxy was studied in the GexSi1-x/[100] Si system in the composition range of 4% to 10% Ge. For strained samples regrowth rates decreased with increasing Ge concentrations, with an activation energy of 2.8 and 3.0 eV for the Ge4Si96 and Ge8Si92 alloys respectively. In contrast, the rates of the strain-relaxed samples increased compared with that of pure Si. The minimum yield of fully regrown samples with Ge concentrations lower than 8% recovered to that of the as-deposited samples. However, the minimum yield of a 3500 Å-thick Ge10Si90 alloy increased to 12 % after recrystallization.

In Situ Tem Studies of The Growth of Strained Si1-xGex By Solid Phase Epitaxy

1990 ◽  
Vol 202 ◽  
Author(s):  
D. C. Paine ◽  
D. J. Howard ◽  
N. D. Evans ◽  
D. W. Greve ◽  
M. Racanelli ◽  
...  
Keyword(s):  
Activation Energy ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Surface Region ◽  
In Situ Tem ◽  
Solid Phase Epitaxy ◽  
Near Surface ◽  
Strained Layer ◽  
Epitaxial Regrowth

ABSTRACTIn this paper we report on the epitaxial growth of strained thin film Si1-xGex on Si by solid phase epitaxy. For these solid phase epitaxy experiments, a 180-nm-thick strained-layer of Si1-xGex with xGe=11.6 at. % was epitaxially grown on <001> Si using chemical vapor deposition. The near surface region of the substrate, including the entire Si1-xGex film, was then amorphized to a depth of 380 nm using a two step process of 100 keV, followed by 200 keV, 29Si ion implantation. The epitaxial regrowth of the alloy was studied with in situ TEM heating techniques which enabled an evaluation of the activation energy for strained solid phase epitaxial regrowth. We report that the activation energy for Si1-xGex (x=l 1.6 at. %) strained-layer regrowth is 3.2 eV while that for unstrained regrowth of pure Si is 2.68 eV and that regrowth in the alloy is slower than in pure Si over the temperature range 490 to 600°C.

Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Amorphous Germanium

2008 ◽  
Vol 1070 ◽  
Author(s):  
Brett Cameron Johnson ◽  
Paul Gortmaker ◽  
Jeffrey C. McCallum
Keyword(s):  
Activation Energy ◽  
Ion Implantation ◽  
Fermi Level ◽  
Concentration Profile ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Germanium ◽  
Time Resolved ◽  
Temperature Range ◽  
Kinetics Of

ABSTRACTThe kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are studied in thick amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates for H-free Ge were measured with a time-resolved reflectivity (TRR) system in the temperature range 300 – 540 °C and found to have an activation energy of (2.15 ± 0.04) eV. Dopant enhanced SPE was measured in a-Ge layers containing a uniform concentration profile of implanted As spanning the concentration regime 1 – 10 × 1019 cm3. The generalized Fermi level shifting model shows excellent fits to the data.

Ge Transport and Epitaxy on [111] Si in the Ge/Pd2Si/Si System

1989 ◽  
Vol 160 ◽  
Author(s):  
Q. Z. Hong ◽  
J. G. Zhu ◽  
W. Xia ◽  
J. W. Mayer
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrate ◽  
Temperature Range ◽  
Minimum Yield

AbstractSolid phase epitaxy in the amorphous(a)-Ge/Pd2Si/Si system has been investigated in the temperature range of 600 to 750 °C. The top Ge started to migrate into the suicide layer at 600 °C. After longer time annealing the mixed Ge released from the suicide matrix and formed a laterally uniform epitaxial Ge70Si30 layer on the [111] Si substrate. A minimum yield of 0.1 was achieved for a 800 Å-thick Ge70Ge30 layer.

Molecular-dynamics studies on solid phase epitaxy of guest-free silicon clathrates

2001 ◽  
Vol 691 ◽  
Author(s):  
Shinji Munetoh ◽  
Koji Moriguchi ◽  
Teruaki Motooka ◽  
Kazuhito Kamei
Keyword(s):  
Activation Energy ◽  
Molecular Dynamics ◽  
Structural Transition ◽  
Solid Phase ◽  
Experimental Studies ◽  
Md Simulations ◽  
Type I ◽  
Solid Phase Epitaxy ◽  
Type Ii ◽  
Silicon Clathrates

ABSTRACTDynamical phenomena during the solid phase epitaxy (SPE) of guest-free Si clathrates (Si34 and Si46) via molecular-dynamics (MD) simulations using the Tersoff potential have been reported. The activation energy of SPE for Si34 has been found to correspond with the experimental value for the cubic diamond phase (c-Si; approximately 2.7eV), while the SPE rates of Si46 are much lower than that of c-Si. The structural transition from Si46 (type-I) to Si34 (type-II) can be also observed during the Si46 [001] SPE. The present results suggest that it is worthwhile to intensify experimental studies concerning crystal growth techniques of clathrate materials and these interesting Si forms may open up a new field in “silicon technologies”.

Ion Implantation and Annealing of Crystalline Oxides

1985 ◽  
Vol 60 ◽  
Author(s):  
C. W. White ◽  
P. S. Sklad ◽  
L. A. Boatner ◽  
G. C. Farlow ◽  
C. J. McHargue ◽  
...  
Keyword(s):  
Activation Energy ◽  
Ion Implantation ◽  
Single Crystal ◽  
Solid Phase ◽  
Planar Interface ◽  
Solid Phase Epitaxy ◽  
Surface Layers ◽  
Α Phase ◽  
Amorphous Surface ◽  
Crystalline Oxides

AbstractThe crystallization of amorphous surface layers produced by ion implantation of single-crystal α-Al2O3 and CaTiO3 are discussed. During annealing, amorphous A12O3 converts first to the α-phase. The crystallized γ then transforms to the a-phase by the motion of a well-defined planar interface. The temperature dependence of the velocity of the γ/α interface has been measured and is characterized by an activation energy of ∼3.6 eV. In CaTiO3, crystallization of the amorphous phase takes place by solid-phase epitaxy. The velocity of the amorphous/crystal interface is characterized by an activation energy of 1.3 eV.

scholarly journals A Study of the Impact of Graphite on the Kinetics of SPS in Nano- and Submicron WC-10%Co Powder Compositions

Ceramics ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 331-363
Author(s):  
Eugeniy Lantcev ◽  
Aleksey Nokhrin ◽  
Nataliya Malekhonova ◽  
Maksim Boldin ◽  
Vladimir Chuvil'deev ◽  
...  
Keyword(s):  
Activation Energy ◽  
Solid Phase ◽  
Continuous Heating ◽  
Diffusion Creep ◽  
Hard Alloys ◽  
Fine Grained ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
The Impact ◽  
Kinetics Of

This study investigates the impact of carbon on the kinetics of the spark plasma sintering (SPS) of nano- and submicron powders WC-10wt.%Co. Carbon, in the form of graphite, was introduced into powders by mixing. The activation energy of solid-phase sintering was determined for the conditions of isothermal and continuous heating. It has been demonstrated that increasing the carbon content leads to a decrease in the fraction of η-phase particles and a shift of the shrinkage curve towards lower heating temperatures. It has been established that increasing the graphite content in nano- and submicron powders has no significant effect on the SPS activation energy for “mid-range” heating temperatures, QS(I). The value of QS(I) is close to the activation energy of grain-boundary diffusion in cobalt. It has been demonstrated that increasing the content of graphite leads to a significant decrease in the SPS activation energy, QS(II), for “higher-range” heating temperatures due to lower concentration of tungsten atoms in cobalt-based γ-phase. It has been established that the sintering kinetics of fine-grained WC-Co hard alloys is limited by the intensity of diffusion creep of cobalt (Coble creep).

Assessment of GaAs heteroepitaxial films grown on silicon‐on‐sapphire upgraded by double solid phase epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1756-1758 ◽  
Author(s):  
J. B. Posthill ◽  
R. J. Markunas ◽  
T. P. Humphreys ◽  
R. J. Nemanich ◽  
K. Das ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy

Kinetics of arsenic-enhanced solid phase epitaxy in silicon

2004 ◽  
Vol 95 (8) ◽  
pp. 4427-4431 ◽  
Author(s):  
B. C. Johnson ◽  
J. C. McCallum
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetics Of

CrSi2/Si(111): Growth of monotype domains by solid phase epitaxy on a vicinal surface

1994 ◽  
Vol 12 (6) ◽  
pp. 3018-3022 ◽  
Author(s):  
André Rocher ◽  
André Oustry ◽  
Marie Josée David ◽  
Michel Caumont
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Vicinal Surface
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