In Situ Tem Studies of The Growth of Strained Si1-xGex By Solid Phase Epitaxy

1990 ◽  
Vol 202 ◽  
Author(s):  
D. C. Paine ◽  
D. J. Howard ◽  
N. D. Evans ◽  
D. W. Greve ◽  
M. Racanelli ◽  
...  
Keyword(s):  
Activation Energy ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Surface Region ◽  
In Situ Tem ◽  
Solid Phase Epitaxy ◽  
Near Surface ◽  
Strained Layer ◽  
Epitaxial Regrowth

ABSTRACTIn this paper we report on the epitaxial growth of strained thin film Si1-xGex on Si by solid phase epitaxy. For these solid phase epitaxy experiments, a 180-nm-thick strained-layer of Si1-xGex with xGe=11.6 at. % was epitaxially grown on <001> Si using chemical vapor deposition. The near surface region of the substrate, including the entire Si1-xGex film, was then amorphized to a depth of 380 nm using a two step process of 100 keV, followed by 200 keV, 29Si ion implantation. The epitaxial regrowth of the alloy was studied with in situ TEM heating techniques which enabled an evaluation of the activation energy for strained solid phase epitaxial regrowth. We report that the activation energy for Si1-xGex (x=l 1.6 at. %) strained-layer regrowth is 3.2 eV while that for unstrained regrowth of pure Si is 2.68 eV and that regrowth in the alloy is slower than in pure Si over the temperature range 490 to 600°C.

In situ TEM studies of the effect of misfit strain on the kinetics of sil-xgex solid phase epitaxy: temperature calibration & surface effects

1992 ◽  
Vol 50 (2) ◽  
pp. 1344-1345
Author(s):  
David C. Paine ◽  
David J. Howard ◽  
N.D. Evans
Keyword(s):  
Solid Phase ◽  
Misfit Strain ◽  
Alloy Layer ◽  
In Situ Tem ◽  
Transformation Rate ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Kinetics Of ◽  
Annealing Experiments

While in situ TEM studies have proven useful for the direct observation of solid-state reaction mechanisms, such studies rarely provide quantitative kinetic data. This limitation is due to problems associated with the accurate measurement of local sample temperature, assessment of beam heating and damage, and minimization of thin-film effects. Sinclair et al. have proposed a technique for establishing the temperature of a sample during in situ TEM annealing experiments in which the wellcharacterized Si <001> solid phase epitaxy amorphous-crystalline (a/c) transformation rate is used to estimate the temperature in an adjacent (but not contiguous) region of the specimen. We have used this in situ technique to determine the activation energy for strained solid phase epitaxy of Sil-xGex (x=5.4, 11.6, and 17 at.%). The alloys were grown by CVD on <001> Si substrates to a thickness of approximately 200 nm. The entire alloy layer, and 180 nm of the underlying substrate, were amorphized with 100, followed by 200 keV 29Si implantation.

Solid-Phase Epitaxial Regrowth and Dopant Activation of Arsenic. Implanted Metastable Pseudomorphic Ge0.08Si0.92 AND GeO.16SiO.84 ON Si(100)

1995 ◽  
Vol 379 ◽  
Author(s):  
D.Y.C. Lie ◽  
J.H. Song ◽  
M.-A. Nicolet ◽  
N.D. Theodore ◽  
J. Candelaria ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Solid Phase Epitaxy ◽  
Epitaxial Regrowth ◽  
Control Samples

ABSTRACTMetastable pseudomorphic GexSi1−x (x=8%,16%) films were deposited on p-Si(100) substrates by chemical-vapor-deposition and then implanted at room temperature with 90 keV arsenic ions to a dose of 1.5×1015/cm2. The implantation amorphizes approximately the top 125 nm of the 145 nm-thick GeSi layers. The Si-GeSi interfaces remain sharp after implantation. Implanted and non-implanted GeSi samples, together with implanted Si control samples, were subsequently annealed simultaneously by rapid thermal annealing in a nitrogen ambient at 600,700,800 × for 10,20,40s at each temperature. The implanted samples undergo layer-by-layer solid-phase epitaxial regrowth during annealing at or above 600 ×C. The amorphized and regrown GeSi layers are always fully relaxed with a very high density of dislocations (1010-1011/cm2). At a fixed annealing temperature, strain relaxation of an implanted GeSi film is substantially more extensive than that of a non-implanted one. About 50-90% of the implanted arsenic ions become electrically active after the completion of solid-phase epitaxy. The percentages of arsenic ions that are activated in the Si control samples are generally higher than those in GeSi. The room-temperature sheet electron mobility in GeSi is roughly 30% lower than that in Si for a given sheet electron concentration. We conclude that metastable GeSi on Si(100) amorphized by arsenic ions and recrystallized by solid-phase epitaxy cannot recover both its crystallinity and its pseudomorphic strain under rapid thermal annealing.

High Resolution In Situ TEM Studies of Silicide-Mediated Crystallization of Amorphous Silicon

1993 ◽  
Vol 321 ◽  
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Solid Phase ◽  
In Situ Tem ◽  
Solid Phase Epitaxy ◽  
High Quality ◽  
Transmission Electron ◽  
Ledge Growth ◽  
Amorphous Si

ABSTRACTWe report in situ high resolution transmission electron microscopy studies of NiSi2-Medi-ated crystallization of Amorphous Si. Compared to conventional solid phase epitaxy of (111) Si, an enhancement of the growth rate by three orders of magnitude was observed and high quality twin-free needles of <111> Si were formed. Crystallization occurred via a ledge growth mechanism at the epitaxial Type A NiSi2/crystalline Si (111) interface. A Model for NiSi2-Mediated crystallization of Amorphous Si involving the passage of kinks along <110> ledges at the NiSi2/crystalline Si (111) interface is proposed.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

Deposition and Crystallisation Behaviour of Amorphous Silicon Thin Films Obtained by Pyrolysis of Disilane Gas at Very Low Pressure

1994 ◽  
Vol 345 ◽  
Author(s):  
T. Kretz ◽  
D. Pribat ◽  
P. Legagneux ◽  
F. Plais ◽  
O. Huet ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Electrical Conductance ◽  
Chemical Vapor ◽  
Crystalline Fraction ◽  
Silicon Thin Films ◽  
Crystallisation Behaviour

AbstractHigh purity amorphous silicon layers were obtained by ultrahigh vacuum (millitorr range) chemical vapor deposition (UHVCVD) from disilane gas. The crystalline fraction of the films was monitored by in situ electrical conductance measurements performed during isothermal annealings. The experimental conductance curves were fitted with an analytical expression, from which the characteristic crystallisation time, tc, was extracted. Using the activation energy for the growth rate extracted from our previous work, we were able to determine the activation energy for the nucleation rate for the analysed-films. For the films including small crystallites we have obtained En ∼ 2.8 eV, compared to En ∼ 3.7 eV for the completely amorphous ones.

Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation

1989 ◽  
Vol 54 (1) ◽  
pp. 42-44 ◽  
Author(s):  
B. T. Chilton ◽  
B. J. Robinson ◽  
D. A. Thompson ◽  
T. E. Jackman ◽  
J.‐M. Baribeau
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Strained Layer ◽  
Epitaxial Regrowth ◽  
Layer Structures

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

Nanoscale Mechanical Properties of In-Situ Tribofilms Generated from ZDDP and F-ZDDP with and without Antioxidants

2007 ◽  
Vol 7 (12) ◽  
pp. 4378-4390 ◽  
Author(s):  
Anuradha Somayaji ◽  
Ramoun Mourhatch ◽  
Pranesh B. Aswath
Keyword(s):  
Electron Microscopy ◽  
Wear Debris ◽  
Surface Region ◽  
Nucleation And Growth ◽  
Near Surface ◽  
Transmission Electron ◽  
Dialkyl Dithiophosphates ◽  
Wear Tests ◽  
Diphenyl Amine

Tribofilms with thickness ranging from 100–200 nm were developed in-situ during wear tests using a zinc dialkyl dithiophosphates (ZDDP) and fluorinated ZDDP (F-ZDDP). The influence of the antioxidant alkylated diphenyl amine on the formation and properties of these tribofilm is examined. Results indicate that the thickness of the tribofilms formed when F-ZDDP is used is always thicker than the tribofilm formed with ZDDP. In addition, in the presence of antioxidants the tribofilm thickness is increased. The hardness of these tribofilms in the absence of the antioxidants is significantly higher at the near surface region (0–30 nm) when compared to the films formed in the presence of antioxidant. Nanoscratch tests conducted to examine the abrasion resistance of the tribofilms also indicate that the tribofilms formed by F-ZDDP are more resistant to scratch compared to films formed by ZDDP. In the presence of antioxidant, tribofilms formed by F-ZDDP are significantly thicker while both films behave in a similar fashion in nanoscratch tests. Transmission electron microscopy of the wear debris formed during the tests were examined and results indicate the nucleation and growth of nanoparticles of Fe3O4 with an approximate size of 5–10 nm embedded within an otherwise amorphous tribofilm.

scholarly journals Carbon-Involved Near-Surface Evolution of Cobalt Catalyst during Reaction: An in-situ Study

2020 ◽  
Author(s):  
Feng Yang ◽  
Haofei Zhao ◽  
Wu Wang ◽  
Qidong Liu ◽  
Xu Liu ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Carbon Diffusion ◽  
Deposition Process ◽  
Catalytic Performance ◽  
Surface Evolution ◽  
Near Surface ◽  
Co Catalysts ◽  
Transmission Electron ◽  
Walled Carbon Nanotubes

Abstract When carbon-containing species are involved in reactions catalyzed by transition metals at high temperature, the diffusion of carbon on/in catalysts dramatically influence the catalytic performance. Acquiring information on the carbon-diffusion-involved evolution of catalysts at atomic level is crucial for understanding the reaction mechanism yet also challenging. For the chemical vapor deposition process of single-walled carbon nanotubes (SWCNTs), we developed methodologies to record in-situ the near-surface structural and chemical evolution of Co catalysts with carbon permeation using an aberration-corrected environmental transmission electron microscope and the synchrotron X-ray absorption spectroscopy. The nucleation and growth of SWCNTs were linked with the partial carbonization of catalysts and the alternating dissolvement-precipitation of carbon in catalysts. The dynamics of carbon atoms in catalysts brings deeper insight into the growth mechanism of SWCNTs and also sheds light on inferring mechanisms of more reactions. The methodologies developed here will find broad applications in studying catalytic and other processes.

Lateral solid phase epitaxy of amorphously grown Si1−xGex layers on SiO2/Si(100) substrates using in-situ RPCVD postannealing

2015 ◽  
Vol 593 ◽  
pp. 91-95
Author(s):  
Oliver Skibitzki ◽  
Yuji Yamamoto ◽  
Markus Andreas Schubert ◽  
Bernd Tillack
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy
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