scholarly journals Silicon Radiation Detectors - Materials and Applications

1982 ◽  
Vol 16 ◽  
Author(s):  
Jack T. Walton ◽  
Eugene E. Haller
Keyword(s):  
Silicon Crystal ◽  
Lithium Ion ◽  
Radiation Detectors ◽  
High Energy ◽  
Nuclear Radiation ◽  
Surface Barrier ◽  
High Energy Particle ◽  
Track Reconstruction ◽  
Processing Technologies ◽  
New Processing

ABSTRACTSilicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed—one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented.

Silicon Material Growth for Nuclear Radiation Detectors

1982 ◽  
Vol 16 ◽  
Author(s):  
P. A. Glasow ◽  
B. O. Kolbesen
Keyword(s):  
Electronic Devices ◽  
Base Material ◽  
Radiation Detectors ◽  
High Energy ◽  
Nuclear Radiation ◽  
High Energy Particle ◽  
Energy Particle ◽  
Particle Detectors ◽  
X Ray ◽  
Nuclear Radiation Detectors

As a base material for semiconductor devices, silicon is more widely used than any other semiconductor. The physical properties, in particular the bandgap which is significantly larger than that of germanium, makes the material extremely important for electronic devices. The world's total annual production of silicon is at present some 2000 t [1]. Compared with this, the 10 kg/year of silicon that is used for detectors is rather modest. However, since work on semiconductor radiation detectors started 25 years ago, silicon in addition to germanium forms the centre of interest as the basis for production of nuclear radiation spectrometers, mainly as high energy particle detectors, but also as X-ray detectors.

Amorphous Silicon/Crystalline Silicon Heterojunctions in Nuclear Radiation Detector Fabrication

1998 ◽  
Vol 507 ◽  
Author(s):  
J.T. Walton ◽  
M. Amman ◽  
G. Conti ◽  
W.S. Hong ◽  
P.N. Luke ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Radiation Detector ◽  
Silicon Detector ◽  
Lithium Ion ◽  
Chemical Vapor ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Crystal Silicon ◽  
Silicon Heterojunctions

ABSTRACTApplication of amorphous silicon/crystalline silicon heterojunctions formed by RF sputter deposition and plasma enhanced chemical vapor deposition to the fabrication of nuclear radiation detectors is described. The performance of these heterojunctions as blocking contacts on highresisitivity p-type and n-type single crystal silicon and on lithium-ion compensated silicon (Si(Li)), which are commonly used in silicon detector fabrication, is presented. It is shown that an aluminum/amorphous-silicon contact on Si(Li) x-ray detectors results in about a factor of two reduction in the background counts when compared to a normal gold barrier contact.

scholarly journals MCNPX simulations of the silicon carbide semiconductor detector response to fast neutrons from D–T nuclear reaction

2016 ◽  
Vol 44 ◽  
pp. 1660226 ◽  
Author(s):  
Katarína Sedlačková ◽  
Andrea Šagátová ◽  
Bohumír Zat'ko ◽  
Vladimír Nečas ◽  
Michael Solar ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Nuclear Reaction ◽  
Charged Particles ◽  
Radiation Detectors ◽  
High Energy ◽  
Nuclear Radiation ◽  
Fast Neutrons ◽  
Detector Response ◽  
X Rays

Silicon Carbide (SiC) has been long recognized as a suitable semiconductor material for use in nuclear radiation detectors of high-energy charged particles, gamma rays, X-rays and neutrons. The nuclear interactions occurring in the semiconductor are complex and can be quantified using a Monte Carlo-based computer code. In this work, the MCNPX (Monte Carlo N-Particle eXtended) code was employed to support detector design and analysis. MCNPX is widely used to simulate interaction of radiation with matter and supports the transport of 34 particle types including heavy ions in broad energy ranges. The code also supports complex 3D geometries and both nuclear data tables and physics models. In our model, monoenergetic neutrons from D–T nuclear reaction were assumed as a source of fast neutrons. Their energy varied between 16 and 18.2 MeV, according to the accelerating voltage of the deuterons participating in D–T reaction. First, the simulations were used to calculate the optimum thickness of the reactive film composed of High Density PolyEthylene (HDPE), which converts neutral particles to charged particles and thusly enhancing detection efficiency. The dependency of the optimal thickness of the HDPE layer on the energy of the incident neutrons has been shown for the inspected energy range. Further, from the energy deposited by secondary charged particles and recoiled ions, the detector response was modeled and the effect of the conversion layer on detector response was demonstrated. The results from the simulations were compared with experimental data obtained for a detector covered by a 600 and 1300 [Formula: see text]m thick conversion layer. Some limitations of the simulations using MCNPX code are also discussed.

Artificial neural network for identification of short-lived particles in the CBM experiment

2020 ◽  
Vol 35 (33) ◽  
pp. 2043003
Author(s):  
Arundhati Banerjee ◽  
Ivan Kisel ◽  
Maksym Zyzak
Keyword(s):  
Neural Network ◽  
Artificial Neural Network ◽  
Data Analysis ◽  
Network Architecture ◽  
Large Scale ◽  
High Energy ◽  
Machine Learning Algorithms ◽  
High Energy Particle ◽  
Track Reconstruction ◽  
Artificial Neural

In high energy particle colliders, detectors record millions of points of data during collision events. Therefore, good data analysis depends on distinguishing collisions which produce particles of interest (signal) from those producing other particles (background). Machine learning algorithms in the current times have become popular and useful as the method of choice for such large scale data analysis. In this work, we propose and implement an artificial neural network architecture to achieve the task of identifying precisely the parent particles from all the candidates arising out of track reconstruction from collision data in the future Compressed Baryonic Matter (CBM) experiment. Our framework performs comparably to the existing computational algorithm for this task even with a simple network architecture.

Crystal Growth and Characterization of CdTe and Cd0.9Zn0.1Te for Nuclear Radiation Detectors

2007 ◽  
Vol 1038 ◽  
Author(s):  
Krishna Mandal ◽  
Sung H. Kang ◽  
Michael Choi ◽  
Alket Mertiri ◽  
Gary W Pabst ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Inclusion Size ◽  
Radiation Detectors ◽  
High Energy ◽  
Nuclear Radiation ◽  
Detector Performance ◽  
Current Voltage ◽  
Ir Transmission ◽  
Vertical Bridgman ◽  
Nuclear Radiation Detectors

AbstractCdTe and Cd0.9Zn0.1Te (CZT) crystals have been studied extensively at EIC Laboratories, Inc. for various applications including x- and γ-ray imaging and high energy radiation detectors. The crystals were grown from in-house zone refined ultra pure precursor materials using a vertical Bridgman furnace. The growth process has been monitored, controlled and optimized by a computer simulation and modeling program (MASTRAPP). The grown crystals were thoroughly characterized after sequential surface passivations and post-growth annealing treatments with and without component overpressures. The infrared (IR) transmission images of the post-treated CdTe and CZT crystals showed average Te inclusion size of ∼10 μm for CdTe crystal and ∼8 μm for CZT crystal. The etch pit density was ≤ 5×104 cm−2 for CdTe and ≤ 3×104 cm−2 for CZT. Various planar and Frisch collar detectors were fabricated and evaluated. From the current-voltage measurements, the electrical resistivity was estimated to be ∼1.5×1010 Ω·cm for CdTe and 2-5×1011 Ω·cm for CZT. The Hecht analysis of electron and hole mobility-lifetime products (μτe and μτh) showed μτe=2×10−3 cm2/V (μτh=8×10−5 cm2/V) and μτ3-6×10−3 cm2/V (μτh=4-6×10−5 cm2/V) for CdTe and CZT, respectively. Final assessments of the detector performance have been carried out using 241Am (60 keV) and 137Cs (662 keV) energy sources and the results are presented in this paper.

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