Silicon Material Growth for Nuclear Radiation Detectors

1982 ◽  
Vol 16 ◽  
Author(s):  
P. A. Glasow ◽  
B. O. Kolbesen
Keyword(s):  
Electronic Devices ◽  
Base Material ◽  
Radiation Detectors ◽  
High Energy ◽  
Nuclear Radiation ◽  
High Energy Particle ◽  
Energy Particle ◽  
Particle Detectors ◽  
X Ray ◽  
Nuclear Radiation Detectors

As a base material for semiconductor devices, silicon is more widely used than any other semiconductor. The physical properties, in particular the bandgap which is significantly larger than that of germanium, makes the material extremely important for electronic devices. The world's total annual production of silicon is at present some 2000 t [1]. Compared with this, the 10 kg/year of silicon that is used for detectors is rather modest. However, since work on semiconductor radiation detectors started 25 years ago, silicon in addition to germanium forms the centre of interest as the basis for production of nuclear radiation spectrometers, mainly as high energy particle detectors, but also as X-ray detectors.

High-speed use of CCD area sensors as high energy particle detectors

1985 ◽  
Vol 240 (1) ◽  
pp. 36-42 ◽  
Author(s):  
Mario Bocciolini ◽  
Antonio Conti ◽  
Giuliano di Caporiacco ◽  
Giuliano Parrini ◽  
Angela Quareni Vignudelli
Keyword(s):  
High Speed ◽  
High Energy ◽  
High Energy Particle ◽  
Energy Particle ◽  
Particle Detectors

scholarly journals Silicon Radiation Detectors - Materials and Applications

1982 ◽  
Vol 16 ◽  
Author(s):  
Jack T. Walton ◽  
Eugene E. Haller
Keyword(s):  
Silicon Crystal ◽  
Lithium Ion ◽  
Radiation Detectors ◽  
High Energy ◽  
Nuclear Radiation ◽  
Surface Barrier ◽  
High Energy Particle ◽  
Track Reconstruction ◽  
Processing Technologies ◽  
New Processing

ABSTRACTSilicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed—one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented.

X-ray detection characteristics of thallium bromide nuclear radiation detectors

2000 ◽  
Vol 47 (3) ◽  
pp. 777-779 ◽  
Author(s):  
K. Hitomi ◽  
O. Muroi ◽  
M. Matsumoto ◽  
R. Hirabuki ◽  
T. Shoji ◽  
...  
Keyword(s):  
Radiation Detectors ◽  
Nuclear Radiation ◽  
X Ray ◽  
Thallium Bromide ◽  
Nuclear Radiation Detectors ◽  
Detection Characteristics

Properties of CdMnTe Single Crystal Used in Nuclear Radiation Detectors

2011 ◽  
Vol 311-313 ◽  
pp. 1209-1212
Author(s):  
Ji Jun Zhang ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Zhen Wen Yuan ◽  
...  
Keyword(s):  
Near Infrared ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Planar Detector ◽  
Vertical Bridgman ◽  
Nuclear Radiation Detectors ◽  
Mn Concentration

The Cd1-xMnxTe crystal is believed to be a good candidate to compete with Cd1-xMnxTe in the X-ray and γ-ray detector application. In this paper, Indium (In) doped Cd0.8Mn0.2Te (CdMnTe) ingots were grown by the modified Vertical Bridgman method. The as-grown crystals were characterized using Near-Infrared (NIR) transmission spectrum mapping of composition, X-ray double-crystal rocking curve measurement, I-V measurement and 241Am gamma rays radiation measurement. The Mn composition extracted from the NIR spectra at different axial and radial distances of the 30×40×2 mm3 CdMnTe wafers shown that the Mn concentration in the range of 0.19430.0008 to 0.2020.0025 mole fraction. The FWHM values of the X-ray rocking curves are of 40-80 arc sec, indicating a high crystalline perfection. The resistivity of the wafers is (2-3) ×1010Ω.cm. The CdMnTe planar detector irradiated by 241Am source shows the energy resolution of 8.5%.

Enhancement correction in high energy particle induced X-ray emission analysis

1979 ◽  
Vol 166 (3) ◽  
pp. 361-365 ◽  
Author(s):  
H. Mommsen ◽  
M. Sarkar ◽  
W. Sarter ◽  
T. Schmittinger
Keyword(s):  
High Energy ◽  
High Energy Particle ◽  
Energy Particle ◽  
Emission Analysis ◽  
X Ray
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