Interfacial Stability and Interdiffusion Examined at the Atomic Level

1989 ◽  
Vol 159 ◽  
Author(s):  
Y. Kim ◽  
A. Ourmazd ◽  
R.J. Malik ◽  
J.A. Rentschler

ABSTRACTUsing chemical lattice imaging in combination with vector pattern recognition, we obtain quantitative profiles of the chemical change across single interfaces with atomic plane resolution. We thus study interdiffusiuon across single GaAs/AlGaAs interfaces as a function of temperature, depth of interface beneath the surface, and doping. Since our technique is sensitive to interdiffusion coefficients as small as 10−20 cm2/s, we can study atomic level changes at a single interface at the low temperatures used for many device processing steps (∼700C). Our results show interdiffusion, and hence the layer stability depend not only on temperature and doping, but also on the distance of the interface from the surface. The implications of these results for the stability of multilayered structures are discussed.

2003 ◽  
Vol 764 ◽  
Author(s):  
Mark J. Yannuzzi ◽  
Neil A. Moser ◽  
Robert C. Fitch ◽  
Gregg H. Jessen ◽  
James K. Gillespie ◽  
...  

AbstractIn an effort to investigate the stability of the surface and hetero-interface of AlGaN/GaN HEMTs during high temperature device processing steps, AlGaN/GaN HEMT samples were subjected to temperatures from 650°C to 1150°C for a period of 30 seconds prior to processing. Hall and photoluminescence measurements were performed on samples before and after temperature stressing. The samples annealed at 700°C and 1150°C were then processed, and electrical parametric data were collected during and after processing. Large increases in HEMT Schottky gate diode reverse leakage current are observed at higher pre-process annealing temperatures, while the low-field mobility decreases.


1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Dreifus ◽  
R.M. Kolbas ◽  
B.P. Sneed ◽  
J.F. Schetzina

ABSTRACTLow temperature (<60° C) processing technologies that avoid potentially damaging processing steps have been developed for devices fabricated from II-VI semiconductor epitaxial layers grown by photoassisted molecular beam epitaxy (MBE). These low temperature technologies include: 1) photolithography (1 µm geometries), 2) calibrated etchants (rates as low as 30 Å/s), 3) a metallization lift-off process employing a photoresist profiler, 4) an interlevel metal dielectric, and 5) an insulator technology for metal-insulator-semiconductor (MIS) structures. A number of first demonstration devices including field-effect transistors and p-n junctions have been fabricated from II-VI epitaxial layers grown by photoassisted MBE and processed using the technology described here. In this paper, two advanced device structures, processed at <60° C, will be presented: 1) CdTe:As-CdTe:In p-n junction detectors, grown in situ by photoassisted MBE, and 2) HgCdTe-HgTe-CdZnTe quantum-well modulation-doped field-effect transistors (MODFETs).


Small ◽  
2015 ◽  
Vol 11 (44) ◽  
pp. 5854-5854 ◽  
Author(s):  
Stephen Jesse ◽  
Qian He ◽  
Andrew R. Lupini ◽  
Donovan N. Leonard ◽  
Mark P. Oxley ◽  
...  

1991 ◽  
Vol 220 ◽  
Author(s):  
D. J. Gravesteijn ◽  
G. F. A. Van De Walle ◽  
A. Pruijmboom ◽  
A. A. Van Gorkum

ABSTRACTA review is given of the requirements on MBE-grown layers as far as processing is concerned. Aspects that are considered are: defect density, particulates, background doping and metallic contamination. The stability of the grown layers against thermal anneals is considered. It is shown that normal thermal diffusion in HBT structures is not important, other effects, like transient diffusion following ion implantation, have drastic effects on the grown profiles. As an example the processing of mesa-isolated heterojunction bipolar transistors is treated. It is shown that all-Si transistors can be grown with ideal Gummel plots. The Gummel plots of SiGe HBTs show small non-idealities. The current gain enhancement of the HBTs with respect to the all-Si transistors is shown to be as large as 200 times. Due to transient diffusion, parasitic barriers are formed, that have a detrimental effect on the AC and DC performance.


2021 ◽  
Vol 8 ◽  
Author(s):  
Jean-François Legeais ◽  
Benoît Meyssignac ◽  
Yannice Faugère ◽  
Adrien Guerou ◽  
Michaël Ablain ◽  
...  

It is essential to monitor accurately current sea level changes to better understand and project future sea level rise (SLR). This is the basis to support the design of adaptation strategies to climate change. Altimeter sea level products are operationally produced and distributed by the E.U. Copernicus services dedicated to the marine environment (CMEMS) and climate change (C3S). The present article is a review paper that intends to explain why and to which extent the sea level monitoring indicators derived from these products are appropriate to develop adaptation strategies to SLR. We first present the main key scientific questions and challenges related to SLR monitoring. The different processing steps of the altimeter production system are presented including those ensuring the quality and the stability of the sea level record (starting in 1993). Due to the numerous altimeter algorithms required for the production, it is complex to ensure both the retrieval of high-resolution mesoscale signals and the stability of the large-scale wavelengths. This has led to the operational production of two different sea level datasets whose specificities are characterized. We present the corresponding indicators: the global mean sea level (GMSL) evolution and the regional map of sea level trends, with their respective uncertainties. We discuss how these products and associated indicators support adaptation to SLR, and we illustrate with an example of downstream application. The remaining gaps are analyzed and recommendations for the future are provided.


1989 ◽  
Vol 54 (4) ◽  
pp. 892-899
Author(s):  
Jozef Kvasnica

While selfdiffusion coefficients Dii are always positive, the stability conditions admit both signs of the interdiffusion coefficients Dij (i ≠ j). In a multicomponent system (n > 2) with opposite signs of interdiffusion (at least within some range of concentrations and temperatures) there might occur anomalous evolution of concentrations, e.g. the damped oscillations of extremal values for some x2/t.


2020 ◽  
Vol 1004 ◽  
pp. 1027-1032
Author(s):  
Ronald Green ◽  
Aivars J. Lelis ◽  
Franklin L. Nouketcha

1,200-V and 1,700-V SiC power MOSFETs from multiple suppliers were subject to dc and pulsed-current stress of the body-diode. Three of the five suppliers of 1,200-V devices evaluated showed no significant bipolar degradation, but the other two supplier’s devices showed varying degrees of degradation due this bipolar phenomenon. Electrical results of newly released 1,700-V devices from two suppliers showed significant degradation in the body-diode and MOSFET I-V characteristics following both dc and pulsed-current stress of their body-diodes. The electrical results presented in this work are consistent with basal plane dislocations (BPDs) that form stacking faults during forward conduction of the body-diode. Significant drift in the body-diode forward voltage and MOSFET on-resistance indicates that a much higher BPD density may be present in 1,700-V devices in comparison to the more mature 1,200-V device offerings. The likely presence of BPDs can lead to significant reliability issues in some modern SiC power MOSFETs, and their distribution seems to vary across suppliers and among devices with the same rating and from the same supplier. These differences are likely due to variations in wafer and device processing among suppliers and within a given product line from a single supplier.


2021 ◽  
pp. 574-581
Author(s):  
Jan Maarten de Bruijn

The stability of the sucrose molecule and the firmness of the tissue structure in the cossettes are of major concern when optimizing the operating conditions for the extraction system. For a given extraction system the retention time is more or less fixed, but the actual pH values and temperatures to be set across the system largely determine the extent to which both sugar gets lost by hydrolysis and the cossette structure deteriorates, particularly by dissolution of pectin. Furthermore, potential sugar loss by microbial infection in the extraction system needs to be controlled too. The influence of the pH value and temperature on these undesirable chemical and microbial reactions will be outlined in this paper, including the consequences for the subsequent processing steps. It can be concluded that the recommended optimal pH values and temperatures for operating the extraction system are a compromise between good and bad.


A considerable body of experimental evidence is now available with reference to the properties of the catalytic surface, showing that such a surface is not uniformly active and that chemical reactions occur over portions of the surface which may vary in extent from a very small fraction of the surface to the whole area. A theory which takes account of these facts was recently put forward by the writer and has received a very favourable acceptance by workers in this field. For reactions in which only a relatively small fraction of the surface is catalytically active, the activity is associated with occasional groups of atoms fixed in metastable positions associated with high energy and chemical unsaturation relative to the atoms in the regular lattice of the catalyst granule. This concept, however, of the catalyst surface, satisfactory though it be, does not answer what, in the last analysis, must be the central problem of the studyof contact catalysis, namely, the nature of the activation induced in the reactants, by association with these activating centres of the surface. It is this problem which has called forth, in the recent literature, vague and ill-defined possibilities which lack any experimental foundation. A series of recent experimental investigations, carried out in the Princeton Laboratories, provide, however, a very concrete picture as to the nature of the activation process in several different examples. It is the object of the present communication to summarise these researches and point out the conclusions to which they logically lead. Hinshelwood and Pritchard, in considering this problem, believed that adsorption of the reactant might increase as often as it decreased the stability of the adsorbed molecule. They see in excessive momentum of parts of the adsorbed molecule a possible cause of chemical change. Norrish writes of a change of configuration or distortion of the molecule consequent on an association with a polar catalyst. His observation that such a change must occur with the absorption of energy needs further qualification when it is remembered that the absorption process is often accompanied by the liberation of large amounts of heat energy. Bodenstein refers to the deformation of adsorbed molecules. Rideal uses the same expression in a recent series of lectures. Constable is more specific. He speaks of a distortion of the OH group in an adsorbed alcohol molecule and of a straining of the adsorbed molecule by the electrostatic and electromagnetic fields of force of the atoms which constitute the centres of activity of the surface. He believes that there must be a limit to the distortion of the adsorbed molecule produced by the centres of activity of a particular substance, though he is not specific as to what that limit may be.


2011 ◽  
Vol 189-193 ◽  
pp. 711-715 ◽  
Author(s):  
Ling Min Shao ◽  
Hong Wu Guo ◽  
Li Li ◽  
Ya Lan Liu ◽  
Yi Liu

Dyed Wood is rapidly degraded by short-wavelength UV radiation, and its degree of discoloration correlate well with the wave length. In the paper we test this hypothesis and analyze chemical change of dyed wood surface affected by UV radiation. So that it will be beneficial for further study on synthesis of photo stabilizer. In this research, dyed veneers are irradiated by artificial light using an ultraviolet accelerated weathering device including 5 different wavelengths (UV to visible). CIE (1976) L*a*b* color measuring system is applied to describe the photo-induced discoloration process of dyed veneer. The reflection curves of spectrum and K-M difference spectra show the diverse change of light absorption and reflection. The results reveal that, samples color is great influenced by 313nm and 340nm UV light, the color stability of dye stuffs is rapidly decreased while stimulated by 254nm UV light. The fastness of dyed veneer has a positive relationship with dye stuffs, Acid Red GR dyed veneer just suffer slight yellowing due to the stability of dye, while Acid Blue V dyed veneer fade obviously and get a tendency of reddish.


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