scholarly journals Patterning: Atomic-Level Sculpting of Crystalline Oxides: Toward Bulk Nanofabrication with Single Atomic Plane Precision (Small 44/2015)

Small ◽  
2015 ◽  
Vol 11 (44) ◽  
pp. 5854-5854 ◽  
Author(s):  
Stephen Jesse ◽  
Qian He ◽  
Andrew R. Lupini ◽  
Donovan N. Leonard ◽  
Mark P. Oxley ◽  
...  
Keyword(s):  
Atomic Plane ◽  
Atomic Level ◽  
Crystalline Oxides

scholarly journals Atomic-Level Sculpting of Crystalline Oxides: Toward Bulk Nanofabrication with Single Atomic Plane Precision

Small ◽  
2015 ◽  
Vol 11 (44) ◽  
pp. 5895-5900 ◽  
Author(s):  
Stephen Jesse ◽  
Qian He ◽  
Andrew R. Lupini ◽  
Donovan N. Leonard ◽  
Mark P. Oxley ◽  
...  
Keyword(s):  
Atomic Plane ◽  
Atomic Level ◽  
Crystalline Oxides

Atomic-Level Understanding of Interfaces in the Synthesis of Crystalline Oxides on Semiconductors: Sr- and Ba/Si(100)(2 × 3) Reconstructions

2014 ◽  
Vol 118 (4) ◽  
pp. 1894-1902 ◽  
Author(s):  
Mikhail Kuzmin ◽  
Marko P. J. Punkkinen ◽  
Pekka Laukkanen ◽  
Jouko J. K. Lång ◽  
Johnny Dahl ◽  
...  
Keyword(s):  
Atomic Level ◽  
Crystalline Oxides

scholarly journals Atomic-Level Fabrication of Crystalline Oxides in STEM

2015 ◽  
Vol 21 (S3) ◽  
pp. 939-940 ◽  
Author(s):  
Q. He ◽  
S. Jesse ◽  
A.R. Lupini ◽  
D.N. Leonard ◽  
M.P. Oxley ◽  
...  
Keyword(s):  
Atomic Level ◽  
Crystalline Oxides

Interfacial Stability and Interdiffusion Examined at the Atomic Level

1989 ◽  
Vol 159 ◽  
Author(s):  
Y. Kim ◽  
A. Ourmazd ◽  
R.J. Malik ◽  
J.A. Rentschler
Keyword(s):  
Chemical Change ◽  
Atomic Plane ◽  
Atomic Level ◽  
Multilayered Structures ◽  
Single Interface ◽  
Device Processing ◽  
The Stability ◽  
Interdiffusion Coefficients ◽  
Processing Steps ◽  
Temperature Depth

ABSTRACTUsing chemical lattice imaging in combination with vector pattern recognition, we obtain quantitative profiles of the chemical change across single interfaces with atomic plane resolution. We thus study interdiffusiuon across single GaAs/AlGaAs interfaces as a function of temperature, depth of interface beneath the surface, and doping. Since our technique is sensitive to interdiffusion coefficients as small as 10−20 cm2/s, we can study atomic level changes at a single interface at the low temperatures used for many device processing steps (∼700C). Our results show interdiffusion, and hence the layer stability depend not only on temperature and doping, but also on the distance of the interface from the surface. The implications of these results for the stability of multilayered structures are discussed.

Atomic-level imaging of the surface structure of Ag2O

1984 ◽  
Vol 42 ◽  
pp. 656-657
Author(s):  
William Krakow
Keyword(s):  
High Vacuum ◽  
Atomic Level ◽  
Ultra High Vacuum ◽  
Research Groups ◽  
Resolution Electron ◽  
Surface Reconstructions ◽  
Order Of Magnitude ◽  
High Resolution Electron Microscope ◽  
Saturated Structure ◽  
Transmission And Reflection

In recent years electron microscopy has been used to image surfaces in both the transmission and reflection modes by many research groups. Some of this work has been performed under ultra high vacuum conditions (UHV) and apparent surface reconstructions observed. The level of resolution generally has been at least an order of magnitude worse than is necessary to visualize atoms directly and therefore the detailed atomic rearrangements of the surface are not known. The present author has achieved atomic level resolution under normal vacuum conditions of various Au surfaces. Unfortunately these samples were exposed to atmosphere and could not be cleaned in a standard high resolution electron microscope. The result obtained surfaces which were impurity stabilized and reveal the bulk lattice (1x1) type surface structures also encountered by other surface physics techniques under impure or overlayer contaminant conditions. It was therefore decided to study a system where exposure to air was unimportant by using a oxygen saturated structure, Ag2O, and seeking to find surface reconstructions, which will now be described.

Surface roughness measurements of vanadium-contaminated fluidized cracking catalysts by atomic force microscopy

1996 ◽  
Vol 54 ◽  
pp. 866-867
Author(s):  
H. Kinney ◽  
M.L. Occelli ◽  
S.A.C. Gould
Keyword(s):  
Surface Roughness ◽  
Zeolite Y ◽  
Atomic Level ◽  
Microporous Structure ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Roughness Measurements ◽  
Cracking Catalysts

For this study we have used a contact mode atomic force microscope (AFM) to study to topography of fluidized cracking catalysts (FCC), before and after contamination with 5% vanadium. We selected the AFM because of its ability to well characterize the surface roughness of materials down to the atomic level. It is believed that the cracking in the FCCs occurs mainly on the catalysts top 10-15 μm suggesting that the surface corrugation could play a key role in the FCCs microactivity properties. To test this hypothesis, we chose vanadium as a contaminate because this metal is capable of irreversibly destroying the FCC crystallinity as well as it microporous structure. In addition, we wanted to examine the extent to which steaming affects the vanadium contaminated FCC. Using the AFM, we measured the surface roughness of FCCs, before and after contamination and after steaming.We obtained our FCC (GRZ-1) from Davison. The FCC is generated so that it contains and estimated 35% rare earth exchaged zeolite Y, 50% kaolin and 15% binder.

Guinier-Preston Platelets Interaction with Dislocations: Study at the Atomic Level

1996 ◽  
Vol 6 (7) ◽  
pp. 825-829 ◽  
Author(s):  
M. Karlík ◽  
B. Jouffrey
Keyword(s):  
Atomic Level
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