Electron Spin Resonance Studies of Silicon Dioxide Films on Silicon in Integrated Circuits Using Spin Dependent Recombination

1989 ◽  
Vol 159 ◽  
Author(s):  
M. A. Jupina ◽  
P. M. Lenahan
Keyword(s):  
Electron Spin Resonance ◽  
Integrated Circuits ◽  
Electron Spin ◽  
Oxide Semiconductor ◽  
Surface Areas ◽  
Enhanced Sensitivity ◽  
Active Point ◽  
Spin Resonance ◽  
Effect Transistor ◽  
Defect Densities

ABSTRACTThe technique of spin dependent recombination (SDR) allows the electron spin resonance (ESR) observation of electrically-active point defects in a single metal-oxide-semiconductor field-effect transistor (MOSFET) with surface areas of only 10-4 cm2 and Si/Si02 interface point defect densities of ∼1011/cm2. With SDR's enhanced sensitivity, devices with different processing details are explored. Differences in the E' spectra for variations in the oxidation processing are discussed.

Probing Semiconductor/Insulator Heterostructures Through Electron Spin Resonance of Point Defects: Interfaces, Interlayers, and Stress

2006 ◽  
Vol 984 ◽  
Author(s):  
A. Stesmans ◽  
K. Clémer ◽  
P. Somers ◽  
V. V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Integrated Circuits ◽  
Electron Spin ◽  
Point Defects ◽  
Atomic Scale ◽  
Interface Quality ◽  
Si Substrates ◽  
Spin Resonance ◽  
The Impact

AbstractElectron spin resonance (ESR) spectroscopy has become indispensable when it comes to the characterization on atomic-scale of structural, and correlated, electrical properties of actual semiconductor/insulator heterostructures. Through probing of paramagnetic point defects such as the Pb-type defects, E', and EX as a function of VUV irradiation and post deposition heat treatment, basic information as to the nature, quality, and thermal stability of the interface and interfacial regions can be established. This is illustrated by some specific examples of ESR analysis on contemporary Si/insulator structures promising for future developments in integrated circuits. First the impact of strain on the Si/SiO2 entity will be discussed. Through ESR analysis of thermally oxidized (111)Si substrates mechanically stressed in situ during oxidation, and tensile strained (100)sSi/SiO2 structures, it will be pointed out that in-plane tensile stress in Si can significantly improve the interface quality. Next, ESR results for stacks of (100)Si/SiOx/HfO2 and (100)Si/LaAlO3 are presented, revealing the potential to attain a high quality Si/SiO2 interface for the former and an abrupt, thermally stable interface for the latter.

Effect of C Impurities in a-Si:H as Measured by Drive-Level Capacitance, Photo Current, and Electron Spin Resonance

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Hautala ◽  
T. Unold ◽  
J.D. Cohen
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Defect Density ◽  
Drive Level ◽  
Level Data ◽  
Definite Effect ◽  
Wide Range ◽  
Spin Resonance ◽  
Defect Densities ◽  
Photo Current

The effect of C impurities in a-Si:H in levels of 0.4 to 2.6 at. % were studied over a wide range of metastable defect densities. Three complimentary experimental techniques [electron spin resonance (ESR), drive-level capacitance (DLC) and photo-current] were employed to track the material's defect density with light soaking and annealing, as well as Urbach energies, midgap absorption and mobility gaps energies as a function of the C content. Our results show C impurities have a definite effect on the initial and saturated defect densities, as well as the midgap absorption and Urbach energies at levels 1 at. % and above. The results indicate that C acts mainly as a center for increased disorder in the material which results in an increase in the bandtail widths, and consequently an increase in intrinsic defects. Comparison to the ESR and drive-level data show an excellent agreement between these two techniques in determining the bulk defect densities in a-Si:H.

Interaction of Oxygen with Nanophase Carbons Investigated by Electron Spin Resonance Spectroscopy

1999 ◽  
Vol 593 ◽  
Author(s):  
A. Manivannan ◽  
A. Punnoose ◽  
M.S. Seehra
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Activated Carbons ◽  
Resonance Spectroscopy ◽  
Direct Relation ◽  
Dangling Bonds ◽  
Spin Concentration ◽  
Surface Areas ◽  
Partial Pressures ◽  
Spin Resonance

ABSTRACTInteraction of oxygen with three commercial activated carbons (GX203, P1400 and MEED50 supplied by PICA USA Inc., with BET surface areas of 1000, 1150 and 2000 m2/g respectively) is investigated using 9 GHz electron spin resonance (ESR) spectroscopy. All three carbons give a single ESR line with g = 2.0028(3), but the linewidth ΔH and the spin concentration Ns, are strongly affected by exposure to oxygen. The ESR parameters (g, ΔH, Ns) are measured for different partial pressures of oxygen. For the highly evacuated samples, δH ≃ 1.2 Oe and Ns ≃ 1019/gm and these results are interpreted in terms of uncompensated surface dangling bonds. Oxygen exposure broadens the line and reduces Ns, in direct relation to the surface areas of the carbons and the effect is reversible. Possible effects of the paramagnetic oxygen on dangling bonds are discussed.

Electron Spin Resonance Investigations of Rapid Thermal Oxidized Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
H. Linke ◽  
P. Omling ◽  
B. K. Meyer ◽  
V. Petrova-Koch ◽  
T. Muschik ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Nonradiative Recombination ◽  
Minimum Density ◽  
Spin Resonance ◽  
Different Types ◽  
Oxidized Porous Silicon ◽  
Pl Intensity ◽  
Defect Densities

ABSTRACTWe studied the defect properties present in rapid thermal oxidized porous silicon (RTOPS) by Electron Spin Resonance (ESR). Two different types of defects are distinguished, one similar to the ones observed in damaged c-Si, and in a-Si. The second one is probably related to the Pbo center at the Si/SiO2 interface. The minimum density of 1016 cm-3 is observed for the as etched and for the 900°C oxidized samples, but reaches a maximum of 8×1018 cm-3for the 600°C samples. The PL intensity anticorrelates with the defect densities, which shows that nonradiative recombination via defects is a very powerful channel in quenching the PL efficiency.

Electron Induced Depassivation Of H And D Terminated Si/Si02 Interfaces

1996 ◽  
Vol 446 ◽  
Author(s):  
R. A. B. Devine ◽  
W. L. Warren ◽  
K. Vanheusden ◽  
C. Mourrain ◽  
M‐J. Bouzid
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ultra Violet ◽  
Electron Injection ◽  
Interface States ◽  
Oxide Semiconductor ◽  
Hot Electron ◽  
Electrical Measurements ◽  
Hot Electron Injection ◽  
Spin Resonance

AbstractWe have performed electron spin resonance and electrical measurements on SiO2/Si structures subjected to anneals in 5% H2/N2 or 5% D2/N2 gases and subsequently injected with electrons using corona ions and ultra‐violet radiation. Threshold voltage and transconductance measurements have also been made on 0.25 μm metal‐oxide‐semiconductor transistors subjected to 400 °C anneals in the same gases and subsequently aged by hot electron injection. The electrical data on SiO2/Si structures indicates that the density of interface states increases as a result of electron injection but that there are only minor differences between H and D passivated interfaces. The data on Pb, trivalent Si dangling bond, centers at the same interfaces observed by electron spin resonance is insufficiently accurate to enable us to observe any significant differences. The hot electron injection experiments on transistors, consistent with other authors, indicate that, for the limited number of measurements we have made, the transistor ageing resulting from the generation of interface states is significantly reduced for devices annealed in the D containing gas as compared to those annealed in the H containing gas. The origins of some potential differences in annealing behaviour between the SiO2/Si structures and the 0.25 μm transistors are suggested.

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