Comparison of defects in crystalline oxide semiconductor materials by electron spin resonance

2015 ◽  
Vol 33 (2) ◽  
pp. 020601 ◽  
Author(s):  
Tokiyoshi Matsuda ◽  
Mutsumi Kimura
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Oxide Semiconductor ◽  
Semiconductor Materials ◽  
Crystalline Oxide ◽  
Spin Resonance

Electron Spin Resonance Studies of Silicon Dioxide Films on Silicon in Integrated Circuits Using Spin Dependent Recombination

1989 ◽  
Vol 159 ◽  
Author(s):  
M. A. Jupina ◽  
P. M. Lenahan
Keyword(s):  
Electron Spin Resonance ◽  
Integrated Circuits ◽  
Electron Spin ◽  
Oxide Semiconductor ◽  
Surface Areas ◽  
Enhanced Sensitivity ◽  
Active Point ◽  
Spin Resonance ◽  
Effect Transistor ◽  
Defect Densities

ABSTRACTThe technique of spin dependent recombination (SDR) allows the electron spin resonance (ESR) observation of electrically-active point defects in a single metal-oxide-semiconductor field-effect transistor (MOSFET) with surface areas of only 10-4 cm2 and Si/Si02 interface point defect densities of ∼1011/cm2. With SDR's enhanced sensitivity, devices with different processing details are explored. Differences in the E' spectra for variations in the oxidation processing are discussed.

Electron Induced Depassivation Of H And D Terminated Si/Si02 Interfaces

1996 ◽  
Vol 446 ◽  
Author(s):  
R. A. B. Devine ◽  
W. L. Warren ◽  
K. Vanheusden ◽  
C. Mourrain ◽  
M‐J. Bouzid
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ultra Violet ◽  
Electron Injection ◽  
Interface States ◽  
Oxide Semiconductor ◽  
Hot Electron ◽  
Electrical Measurements ◽  
Hot Electron Injection ◽  
Spin Resonance

AbstractWe have performed electron spin resonance and electrical measurements on SiO2/Si structures subjected to anneals in 5% H2/N2 or 5% D2/N2 gases and subsequently injected with electrons using corona ions and ultra‐violet radiation. Threshold voltage and transconductance measurements have also been made on 0.25 μm metal‐oxide‐semiconductor transistors subjected to 400 °C anneals in the same gases and subsequently aged by hot electron injection. The electrical data on SiO2/Si structures indicates that the density of interface states increases as a result of electron injection but that there are only minor differences between H and D passivated interfaces. The data on Pb, trivalent Si dangling bond, centers at the same interfaces observed by electron spin resonance is insufficiently accurate to enable us to observe any significant differences. The hot electron injection experiments on transistors, consistent with other authors, indicate that, for the limited number of measurements we have made, the transistor ageing resulting from the generation of interface states is significantly reduced for devices annealed in the D containing gas as compared to those annealed in the H containing gas. The origins of some potential differences in annealing behaviour between the SiO2/Si structures and the 0.25 μm transistors are suggested.

scholarly journals Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

2012 ◽  
Vol 100 (2) ◽  
pp. 023503 ◽  
Author(s):  
R. M. Jock ◽  
S. Shankar ◽  
A. M. Tyryshkin ◽  
Jianhua He ◽  
K. Eng ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Metal Oxide ◽  
Electron Spin ◽  
Metal Oxide Semiconductor ◽  
Semiconductor Heterostructures ◽  
Oxide Semiconductor ◽  
Band Tail ◽  
Spin Resonance
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