Electron Spin Resonance Investigations of Rapid Thermal Oxidized Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
H. Linke ◽  
P. Omling ◽  
B. K. Meyer ◽  
V. Petrova-Koch ◽  
T. Muschik ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Nonradiative Recombination ◽  
Minimum Density ◽  
Spin Resonance ◽  
Different Types ◽  
Oxidized Porous Silicon ◽  
Pl Intensity ◽  
Defect Densities

ABSTRACTWe studied the defect properties present in rapid thermal oxidized porous silicon (RTOPS) by Electron Spin Resonance (ESR). Two different types of defects are distinguished, one similar to the ones observed in damaged c-Si, and in a-Si. The second one is probably related to the Pbo center at the Si/SiO2 interface. The minimum density of 1016 cm-3 is observed for the as etched and for the 900°C oxidized samples, but reaches a maximum of 8×1018 cm-3for the 600°C samples. The PL intensity anticorrelates with the defect densities, which shows that nonradiative recombination via defects is a very powerful channel in quenching the PL efficiency.

Electron spin resonance investigations of oxidized porous silicon

1993 ◽  
Vol 63 (14) ◽  
pp. 1930-1932 ◽  
Author(s):  
B. K. Meyer ◽  
V. Petrova‐Koch ◽  
T. Muschik ◽  
H. Linke ◽  
P. Omling ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Spin Resonance ◽  
Oxidized Porous Silicon

Electron spin resonance of light holes in porous silicon

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4590-4592
Author(s):  
Yu.V. Gorelkinski ◽  
Kh.A. Abdullin ◽  
G.K. Kalykova ◽  
B.N. Mukashev ◽  
A.T. Olzhabay ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Spin Resonance

The Influence of the Type of Dipping Composition on the Structure of Aramid Cord Threads

2018 ◽  
Vol 45 (4) ◽  
pp. 171-173
Author(s):  
L.N. Andreikova ◽  
S.P. Bobrov ◽  
Yu.O. Andriasyan ◽  
S.G. Karpova ◽  
I.A. Mikhailov
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Correlation Time ◽  
Physicomechanical Properties ◽  
Electron Spin Resonance Spectroscopy ◽  
Resonance Spectroscopy ◽  
Service Properties ◽  
Radical Concentration ◽  
Spin Resonance ◽  
Different Types

Publications concerned with the influence of the type of dipping composition on the adhesion, physicomechanical, and service properties of aramid cord threads of grades Arom-75 (Rusar-75), Arom-175 (Rusar-175), and Rusar-200 are analysed. According to current ideas, the type of dipping composition affects not only the adhesion and physicomechanical properties of aramid cord but also its structure. Using electron spin resonance spectroscopy, we studied specimens of dipped Arom-75 cord threads and undipped threads (for comparison). The parameters characterising the structural state of the investigated polymer specimens were determined: the correlation time, the radical concentration in the investigated specimen, and the ratio of the proportion of dense amorphous regions to the proportion of loose amorphous regions. Data for cord based on Ruslan® threads dipped in two different compositions and data for undipped cord were compared. The possibility of changing the structure of cord and the service properties of mechanical rubber goods with an aramid skeleton by using different types of dipping composition was shown.

Electron spin resonance of light holes in porous silicon

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4590-4592
Author(s):  
Yu.V. Gorelkinski ◽  
Kh.A. Abdullin ◽  
G.K. Kalykova ◽  
B.N. Mukashev ◽  
A.T. Olzhabay ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Spin Resonance

Effect of C Impurities in a-Si:H as Measured by Drive-Level Capacitance, Photo Current, and Electron Spin Resonance

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Hautala ◽  
T. Unold ◽  
J.D. Cohen
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Defect Density ◽  
Drive Level ◽  
Level Data ◽  
Definite Effect ◽  
Wide Range ◽  
Spin Resonance ◽  
Defect Densities ◽  
Photo Current

The effect of C impurities in a-Si:H in levels of 0.4 to 2.6 at. % were studied over a wide range of metastable defect densities. Three complimentary experimental techniques [electron spin resonance (ESR), drive-level capacitance (DLC) and photo-current] were employed to track the material's defect density with light soaking and annealing, as well as Urbach energies, midgap absorption and mobility gaps energies as a function of the C content. Our results show C impurities have a definite effect on the initial and saturated defect densities, as well as the midgap absorption and Urbach energies at levels 1 at. % and above. The results indicate that C acts mainly as a center for increased disorder in the material which results in an increase in the bandtail widths, and consequently an increase in intrinsic defects. Comparison to the ESR and drive-level data show an excellent agreement between these two techniques in determining the bulk defect densities in a-Si:H.

Electron Spin Resonance Study of the Dangling Bond in a-Si:H and Porous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
T.J. Mc Mahon ◽  
Y. Xiao
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Electrochemical Etching ◽  
Bond Line ◽  
Electron Spin Resonance Study ◽  
Dangling Bond ◽  
Porous Si ◽  
Spin Resonance ◽  
G Value

We compare the electron spin resonance (ESR) signal of the dangling bond in porous silicon films, produced by electrochemical etching, to the ESR signal from hydrogenated amorphous Si (a-Si:H). The anisotropy of the ESR signal in porous Si showed g values varying as for the Pb Si/SiO2 interface dangling bond. The g value varies from g|| − 2.0020 to gL − 2.0080 with an inhomogeneously broadened line width increasing from 1.8 to 3.8 G. A porous Si ESR powder line, with superhyperfine and strain broadening intrinsic to porous Si, is compared to the a−Si:H dangling bond line. The result is more inhomogeneous broadening of line widths parallel and perpendicular to the dangling bond axis in a-Si:H, and less anisotropy in g|| − gL- No evidence was seen for light-induced metastability on a H-passivated porous Si film.

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