Electronic and Structural Study of Ni(Co) Silicide/Si(111) Contact System Studied by Soft X-Ray Emission Spectroscopy
Keyword(s):
X Ray
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ABSTRACTAn electron excited Si L2,3 valence band soft x-ray emission spectrum (SXES) for Ni(or Co)Si2 showed a clear modification from that for Si. From the SXES study, a fair amount of the Si(3s) valence band density of state (VB-DOS) is concluded to be included in the upper part of the VB-DOS for the transition metal(TM) disilicides due to the TM-Si bond formation, which is a clear contrast to proposals given so far. Non-destructive structural analysis of a NiSi2 (tens of nm)/Si(111) contact is also carried out successfully using the SXES.
1976 ◽
Vol 40
(6)
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pp. 1720-1724
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Valence band electronic structure of V2O5 as determined by resonant soft X-ray emission spectroscopy
2005 ◽
Vol 149
(1-3)
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pp. 45-50
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2015 ◽
Vol 11
(12)
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pp. 5804-5809
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1989 ◽
Vol 54
(21)
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pp. 5105-5110
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Keyword(s):
1993 ◽
Vol 32
(Part 2, No. 4B)
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pp. L597-L600
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