Electronic and Structural Study of Ni(Co) Silicide/Si(111) Contact System Studied by Soft X-Ray Emission Spectroscopy

1989 ◽  
Vol 159 ◽  
Author(s):  
H. Watabe ◽  
H. Nakamura ◽  
M. Iwami ◽  
M. Hirai ◽  
M. Kusaka

ABSTRACTAn electron excited Si L2,3 valence band soft x-ray emission spectrum (SXES) for Ni(or Co)Si2 showed a clear modification from that for Si. From the SXES study, a fair amount of the Si(3s) valence band density of state (VB-DOS) is concluded to be included in the upper part of the VB-DOS for the transition metal(TM) disilicides due to the TM-Si bond formation, which is a clear contrast to proposals given so far. Non-destructive structural analysis of a NiSi2 (tens of nm)/Si(111) contact is also carried out successfully using the SXES.

1993 ◽  
Vol 320 ◽  
Author(s):  
H. Watabe ◽  
M. Iwami ◽  
M. Hirai ◽  
M. Kusaka ◽  
H. Nakamura ◽  
...  

ABSTRACTSi L2,3 valence band soft x-ray emission spectrum (SXES) due to an e ectron excitation for silicides shows a clear modification from that for Si single crystal. Using this fact in combination with the incident angle variation(IAV) device, a non-destructive in-depth analysis of a Au(thin film)-Si(lll) contact is successfully carried out. Also, the SXES method has clarified the fact that a fair amount of the Si-s valence band density of state (yB-DOS) is included in the upper part of the yB-DOS for a Au-Si alloy, or Au-silicide, due to the Au-Si bond formation, which is a clear contrast to proposals given so far.


1990 ◽  
Vol 187 ◽  
Author(s):  
H. Watabe ◽  
M. Iwami ◽  
M. Hirai ◽  
M. Kusaka ◽  
M. Kubota ◽  
...  

AbstractSpectra obtained by a new soft x-ray emission spectroscopy(SXES) apparatus again exhibited clear differences among Si-compounds and Si crystal. A non-destructive analysis of an annealed transition metal(TMSi:film)/Si(111) contact system was carried out using either the distinct differences of Si L2, 3 SXES spectra between TMSi's and Si single crystals or the fad that the soft x-ray production depth increases in a solid with the energy of the primary electron, Ep. It was shown that the apparatus was capable of exploring electronic and atomic structures of a multi-layered contact system grown on a Si(111) substrate.


1990 ◽  
Vol 29 (Part 1, No. 10) ◽  
pp. 2014-2016 ◽  
Author(s):  
Nansheng Zhou ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Motohiro Iwami ◽  
Hatsuo Nakamura

1976 ◽  
Vol 40 (6) ◽  
pp. 1720-1724 ◽  
Author(s):  
Chikara Sugiura ◽  
Isao Suzuki ◽  
Jiro Kashiwakura ◽  
Yohichi Gohshi

Polyhedron ◽  
2007 ◽  
Vol 26 (13) ◽  
pp. 2971-2978 ◽  
Author(s):  
Vukadin M. Leovac ◽  
Ljiljana S. Jovanović ◽  
Violeta S. Jevtović ◽  
Giorgio Pelosi ◽  
Franco Bisceglie

1993 ◽  
Vol 32 (Part 2, No. 4B) ◽  
pp. L597-L600 ◽  
Author(s):  
Satoshi Kawamoto ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Hatsuo Nakamura ◽  
Motohiro Iwami ◽  
...  

2005 ◽  
Vol 98 (1) ◽  
pp. 013704 ◽  
Author(s):  
L. Zhang ◽  
I. Konovalov ◽  
D. Wett ◽  
D. Schulze ◽  
R. Szargan ◽  
...  

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