Sxes Study of Transition Metal Silicide Films and their Contacts to Semiconductors

1990 ◽  
Vol 187 ◽  
Author(s):  
H. Watabe ◽  
M. Iwami ◽  
M. Hirai ◽  
M. Kusaka ◽  
M. Kubota ◽  
...  

AbstractSpectra obtained by a new soft x-ray emission spectroscopy(SXES) apparatus again exhibited clear differences among Si-compounds and Si crystal. A non-destructive analysis of an annealed transition metal(TMSi:film)/Si(111) contact system was carried out using either the distinct differences of Si L2, 3 SXES spectra between TMSi's and Si single crystals or the fad that the soft x-ray production depth increases in a solid with the energy of the primary electron, Ep. It was shown that the apparatus was capable of exploring electronic and atomic structures of a multi-layered contact system grown on a Si(111) substrate.

1990 ◽  
Vol 29 (Part 1, No. 10) ◽  
pp. 2014-2016 ◽  
Author(s):  
Nansheng Zhou ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Motohiro Iwami ◽  
Hatsuo Nakamura

1989 ◽  
Vol 159 ◽  
Author(s):  
H. Watabe ◽  
H. Nakamura ◽  
M. Iwami ◽  
M. Hirai ◽  
M. Kusaka

ABSTRACTAn electron excited Si L2,3 valence band soft x-ray emission spectrum (SXES) for Ni(or Co)Si2 showed a clear modification from that for Si. From the SXES study, a fair amount of the Si(3s) valence band density of state (VB-DOS) is concluded to be included in the upper part of the VB-DOS for the transition metal(TM) disilicides due to the TM-Si bond formation, which is a clear contrast to proposals given so far. Non-destructive structural analysis of a NiSi2 (tens of nm)/Si(111) contact is also carried out successfully using the SXES.


2003 ◽  
Vol 58 (1) ◽  
pp. 16-21 ◽  
Author(s):  
Martin Schlüter ◽  
Birgit Heying ◽  
Rainer Pöttgen

Abstract The gallides HfCoGa2 and HfNiGa2 were synthesized by arc-melting of the elements and subsequent annealing in glassy carbon crucibles. Their structures have been reinvestigated by X-ray diffraction on powders and single crystals: I4mm, a = 1222.4(1), c = 812.0(1) pm, wR2 = 0.0766, 1464 F2 values, 64 variables, BASF = 0.41(2) for HfCoGa2 and a = 1224.0(2), c = 809.3(2) pm, wR2 = 0.0609, 1499 F2 values, 63 variables for HfNiGa2. In contrast to a previous investigation (Dopov. Akad. Nauk Ukr. RSR, Ser. A, 51 (1988)) we observe a fully ordered arrangement of the transition metal and gallium atoms. The crystal chemistry of these gallides is briefly discussed.


2014 ◽  
Vol 21 (4) ◽  
pp. 751-755 ◽  
Author(s):  
Jian Zhu ◽  
Huiping Duan ◽  
Yimin Yang ◽  
Li Guan ◽  
Wei Xu ◽  
...  

Underglaze copper-red decoration,i.e.the copper colourant used to paint diversified patterns on the surface of a body and then covered by transparent glaze and fired at high temperature in a reductive firing environment, is famous all over the world. However, the red colouration mechanism generated by underglaze copper remains unclear. In particular, the fact that the edges of the red patterns are orange has been ignored in previous research. Here, non-destructive analysis has been carried out on a precious fragment of early underglaze red porcelain using synchrotron radiation X-ray fluorescence, X-ray absorption near-edge spectroscopy (XANES) and reflection spectrometry techniques. The results suggest that the copper content in the red region is higher than that in the orange region, and other colour generation elements do not have obvious content difference, indicating that the colour generation effect of the underglaze red product is related to the copper content. XANES analysis shows that the valence states of copper in the red and orange regions are similar and metal copper contributes to their hues. The results of reflection spectrometry demonstrate that tiny orange hues could be attributed to the Mie scatting effect. Therefore, light-scattering effects should be considered when researching the colouration mechanism of underglaze red.


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