Sxes Study of Transition Metal Silicide Films and their Contacts to Semiconductors
Keyword(s):
X Ray
◽
AbstractSpectra obtained by a new soft x-ray emission spectroscopy(SXES) apparatus again exhibited clear differences among Si-compounds and Si crystal. A non-destructive analysis of an annealed transition metal(TMSi:film)/Si(111) contact system was carried out using either the distinct differences of Si L2, 3 SXES spectra between TMSi's and Si single crystals or the fad that the soft x-ray production depth increases in a solid with the energy of the primary electron, Ep. It was shown that the apparatus was capable of exploring electronic and atomic structures of a multi-layered contact system grown on a Si(111) substrate.
1983 ◽
Vol 79
(6)
◽
pp. 785
◽
2020 ◽
Vol 171
◽
pp. 108699
◽
2017 ◽
Vol 407
◽
pp. 244-255
◽