Laser Selective Area Epitaxy for the Potential of Optoelectronic Integration

1989 ◽  
Vol 158 ◽  
Author(s):  
H. Liu ◽  
J.C. Roberts ◽  
J. Ramdani ◽  
S.M. Bedair
Keyword(s):  
Growth Rate ◽  
Gaas Layer ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Gaas Films ◽  
Se Doping ◽  
Growth Rate Control ◽  
P Type ◽  
First Time ◽  
Planar Doping

ABSTRACTWe report for the first time the dopant behavior in laser assisted selective epitaxy of device quality GaAs films. DMZn and H2Se were used as p-type and n-type dopants respectively. Uniform doping was achieved by introducing TMGa, AsH3 and dopant gases simultaneously and was accompanied by a decrease in growth rate for both Zn and Se doping. For planar doping, several Se planes were embedded in a GaAs layer by simultaneously introducing AsH3 and H2Se during the LCVD process. A sheet carrier concentration in the 1012 – 1013 cm−2 range was obtained for a single Se plane. Hall data of these films will be discussed. It was found planar doping results in better electrical properties and better growth rate control.

High Quality GaAs on Si by Selective Area Epitaxy

1990 ◽  
Vol 198 ◽  
Author(s):  
N.H. Karam ◽  
V. Haven ◽  
S.M. Vernon ◽  
N. El-Masry ◽  
M. Lingunis ◽  
...  
Keyword(s):  
Atomic Layer ◽  
High Quality ◽  
Selective Area Epitaxy ◽  
Defect Reduction ◽  
Gaas On Si ◽  
Reduction Techniques ◽  
Selective Area ◽  
Gaas Films ◽  
Oxide Removal ◽  
Si Films

ABSTRACTSelective area Epitaxy (SE) of high quality GaAs on Si films has been achieved using conventional MOCVD and Atomic Layer Epitaxy (ALE) nucleation techniques. Epitaxial GaAs films were deposited inside windows etch patterned in the oxide coated Si wafers. SE was found to eliminate wafer warpage, reduce film cracking and reduce the tensile stresses for islands less than 200 µm/side. Complete stress relief has been achieved in 10 µm/side islands after oxide removal. Defect reduction techniques have been employed resulting in two orders of magnitude reduction in the dislocation density and excellent surface morphologies. This paper addresses the potential of SE, by the above techniques in improving the quality of the GaAs on Si films.

Photo-Assisted Chemical Beam Epitaxy of II-VI Semiconductors

1992 ◽  
Vol 279 ◽  
Author(s):  
E. Ho ◽  
G. A. Coronado ◽  
L. A. Kolodziejski
Keyword(s):  
Growth Rate ◽  
Growth Conditions ◽  
Reaction Rate Constant ◽  
Chemical Beam Epitaxy ◽  
Selective Area Epitaxy ◽  
Rate Enhancement ◽  
Selective Area ◽  
Beam Incident ◽  
Rate Retardation

ABSTRACTPhoto-assisted epitaxy is a versatile growth technique which allows in situ modification of surface chemical reactions. Under appropriate growth conditions the surface stoichiometry can be tuned by selectively desorbing surface species, or by decomposing particular molecular species, or by affecting the reaction rate constant of a chemical process. A potential application of laser-assisted growth rate enhancement or growth rate retardation is in the area of maskless selective area epitaxy. We have investigated the effect of photons on the growth of ZnSe by solid and gaseous source molecular beam epitaxy using various combination of sources. Significant growth rate enhancement (up to 20x), as well as growth rate suppression (as much as 70%), have been observed depending on the sources employed. In all cases, the laser power density remained low (∼200 mW/cm2), and the creation of photo-generated carriers was found to be required. An electron beam incident to the surface has a similar effect and increased the growth rate.

scholarly journals Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 57
Author(s):  
Monica Bollani ◽  
Alexey Fedorov ◽  
Marco Albani ◽  
Sergio Bietti ◽  
Roberto Bergamaschini ◽  
...  
Keyword(s):  
Growth Rate ◽  
Morphological Study ◽  
Diffusion Length ◽  
Growth Parameters ◽  
Mask Pattern ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Sio2 Mask

We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are compared to the case of the GaAs homoepitaxy to highlight the criticalities arising by switching to heteroepitaxy. We found that the nanomembranes evolution strongly depends on the chosen growth parameters as well as mask pattern. The selectivity of III-V material with respect to the SiO2 mask can be obtained when the lifetime of Ga adatoms on SiO2 is reduced, so that the diffusion length of adsorbed Ga is high enough to drive the Ga adatoms towards the etched slits. The best condition for a heteroepitaxial selective area epitaxy is obtained using a growth rate equal to 0.3 ML/s of GaAs, with a As BEP pressure of about 2.5 × 10−6 torr and a temperature of 600 °C.

Scanning force microscopy measurement of edge growth rate enhancement in selective area epitaxy

1993 ◽  
Vol 62 (5) ◽  
pp. 496-498 ◽  
Author(s):  
M. A. Cotta ◽  
R. A. Hamm ◽  
T. W. Staley ◽  
R. D. Yadvish ◽  
L. R. Harriott ◽  
...  
Keyword(s):  
Growth Rate ◽  
Scanning Force Microscopy ◽  
Selective Area Epitaxy ◽  
Rate Enhancement ◽  
Force Microscopy ◽  
Selective Area ◽  
Scanning Force ◽  
Microscopy Measurement

scholarly journals Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 11
Author(s):  
Viktor Shamakhov ◽  
Dmitriy Nikolaev ◽  
Sergey Slipchenko ◽  
Evgenii Fomin ◽  
Alexander Smirnov ◽  
...  
Keyword(s):  
Growth Rate ◽  
Integrated Circuits ◽  
Quantum Wells ◽  
Chemical Vapour ◽  
Growth Conditions ◽  
Local Change ◽  
Selective Area Epitaxy ◽  
Mocvd Growth ◽  
Selective Area ◽  
Sio2 Mask

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO2 mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.

Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Li ◽  
A. M. Jones ◽  
S. D. Roh ◽  
D. A. Turnbull ◽  
E. E. Reuter ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Morphology ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Transition Band ◽  
Selective Area Epitaxy ◽  
Sapphire Substrates ◽  
Selective Area ◽  
Layer Structures ◽  
First Time

ABSTRACTWe have studied GaN films grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrates using different buffer layer structures. Surface morphology was characterized by scanning electron microscopy (SEM). Optical properties were measured using photoluminescence (PL), cathodoluminescence (CL) spectroscopy and catho-luminescence wavelength imaging (CLWI) method. It is found that the hexagonal pit-like defects in morphology are associated with the D-A/e-A transition band in the PL and CL spectra. The same correlation of morphology with optical properties is observed for the GaN films grown by selective area epitaxy (SAE). In addition, the possibility of improving optical quality by SAE is investigated. The SAE depth profile is simulated for the first time, and satisfactory results are obtained.

Facet Evolution and Selective Growth of GaAs/AlGaAs Lateral Structure Grown by Growth–Interrupted Chemical Beam Epitaxy Using Unprecracked Monoethylarsine

1995 ◽  
Vol 405 ◽  
Author(s):  
Jeong-Rae Ro ◽  
Sung-Bock Kim ◽  
Seong-Ju Park ◽  
Jihwa Lee ◽  
El-Hang Lee
Keyword(s):  
Quantum Wires ◽  
Gaas Layer ◽  
Chemical Beam Epitaxy ◽  
Selective Area Epitaxy ◽  
Potential Implication ◽  
Patterned Substrate ◽  
Selective Area ◽  
Growth Interruption ◽  
Surface Migration ◽  
Crystallographic Planes

AbstractFacet evolution and selective area epitaxy of GaAs/AIGaAs ridge and V-groove structure grown on non-planar GaAs(100) substrate by chemical beam epitaxy(CBE) have been investigated for nanostructure applications. To enhance the crystallographic selectivity and to study the new facet evolution on patterned substrate, GaAs and AlGaAs epilayer were grown by growth-interruption mode and continuous mode, respectively. High selectivity of GaAs layer was observed to depend on the various crystallographic planes even at low growth temperature. This was attributed to the efficient Ga surface migration and desorption during the growth-interruption periods. The growth-interruption method was found to be very efficient in improving the morphology of faceted surfaces. We demonstrated that the formation of (111) V-groove and (411) ridge GaAs structures which were surrounded by AlGaAs layer to show the potential implication of this method for the formation of quantum wires.

TOWARDS THE QUESTION OF SPECIALIZED FEEDS FOR TENCHES (TINCA TINCA)

2017 ◽  
pp. 89-97
Author(s):  
Elena Mikhaylovna Chervonenko ◽  
Lina Yurievna Lagutkina
Keyword(s):  
Growth Rate ◽  
Fish Growth ◽  
Animal Origin ◽  
State Technical ◽  
Tinca Tinca ◽  
Daily Growth ◽  
Volga River ◽  
The Moment ◽  
First Time ◽  
Technical Centre

The article describes the process of tench growing (male and female species removed from set gear in the Volga river in the Astrakhan region) using experimental feedstuff "T", taking into account the fact that problems with artificial growing tench ( Тinca tinca ) appear first in the process of feeding when wild sires change to artificial food. The research took place on the base of the department of aquaculture and water bioresources of Astrakhan State Technical University in innovation centre "Bioaquapark - scientific and technical centre of aquaculture" in 2015. Special feed including components of animal origin - mosquito grab and sludge worm as an effective substitute to fish flour, as well as components of vegetable origin (carrot, parsley, pumpkin, wheatgrass) for domestication of tenches are offered for the first time. Food technology has been described. The exact composition of the formula, which is being licensed at the moment, is not disclosed. Feed "T", which has undergone biological analysis and is in accordance with organoleptic and physical standards was used for feeding tench female and male species during domestication period (60 days), along with food "Coppens" (Holland). Feed efficiency was determined according to survival and daily fish growth. Growth rate of females appeared more intensive than growth rate of males fed with experimental food "T". Daily growth changed depending on the types of food: from 0.3 ("Coppens") to 0.47 (experimental food) in females, from 0.25 ("Coppens") to 0.39 (experimental food) with males. Ability to survive among tench species fed with "Coppens" and experimental food made 60% and 100%, correspondingly. Nutricion of tench species with experimental food encouraged their domestication, which allowed using tench species in further fish breeding process in order to get offspring. The project was supported by the Innovation Promotion Fund in terms of the project "Development and implementation of the technique for the steady development of aquaculture: food "TechSA".

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