Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Li ◽  
A. M. Jones ◽  
S. D. Roh ◽  
D. A. Turnbull ◽  
E. E. Reuter ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Morphology ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Transition Band ◽  
Selective Area Epitaxy ◽  
Sapphire Substrates ◽  
Selective Area ◽  
Layer Structures ◽  
First Time

ABSTRACTWe have studied GaN films grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrates using different buffer layer structures. Surface morphology was characterized by scanning electron microscopy (SEM). Optical properties were measured using photoluminescence (PL), cathodoluminescence (CL) spectroscopy and catho-luminescence wavelength imaging (CLWI) method. It is found that the hexagonal pit-like defects in morphology are associated with the D-A/e-A transition band in the PL and CL spectra. The same correlation of morphology with optical properties is observed for the GaN films grown by selective area epitaxy (SAE). In addition, the possibility of improving optical quality by SAE is investigated. The SAE depth profile is simulated for the first time, and satisfactory results are obtained.

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

Plasma-Assisted MOCVD Growth of ZnO Thin Films

2005 ◽  
Vol 892 ◽  
Author(s):  
Maria Losurdo ◽  
Maria Michela Giangregorio ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
Graziella Malandrino ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Zno Thin Films ◽  
Zno Films ◽  
Mocvd Growth ◽  
Metalorganic Chemical

AbstractZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) also plasma assisted (PA-MOCVD) on c-axis oriented sapphire (0001) and Si(001) substrates using the alternative Zn(TTA)2·tmed (HTTA=2-thenoyltrifluoroacetone,TMED=N,N,N’,N’-tetramethylethylendiamine) precursor. The structural, morphological and optical properties of ZnO films have been investigated. The results show that the O2 plasma assisted growth results in an improvement of the structure, in smoother morphologies and in a better optical quality with a sharp and intense exciton of ZnO films.

Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy

2008 ◽  
Vol 310 (6) ◽  
pp. 1049-1056 ◽  
Author(s):  
Martin Heiß ◽  
Eva Riedlberger ◽  
Danče Spirkoska ◽  
Max Bichler ◽  
Gerhard Abstreiter ◽  
...  
Keyword(s):  
Optical Properties ◽  
Growth Mechanisms ◽  
Selective Area Epitaxy ◽  
Selective Area

The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown onr-Plane Sapphire Substrates

2011 ◽  
Vol 50 (8R) ◽  
pp. 080201
Author(s):  
Tom J. Badcock ◽  
Rui Hao ◽  
Michelle A. Moram ◽  
Menno J. Kappers ◽  
Phil Dawson ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Surface Morphology ◽  
Quantum Wells ◽  
Sapphire Substrates

Microstructural and Optical Characterization of GaN Films Grown by PECVD on (0001) Sapphire Substrates

1989 ◽  
Vol 162 ◽  
Author(s):  
T. P. Humphreys ◽  
C. A. Sukow ◽  
R. J. Nemanich ◽  
J. B. Posthill ◽  
R. A. Rudder ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Epitaxial Films ◽  
Optical And Electrical Properties ◽  
Spectroscopy Data ◽  
Sapphire Substrates ◽  
Cubic Gan ◽  
First Time

ABSTRACTEpitaxial GaN films have been grown by plasma-enhanced chemical vapor deposition (PECVD). The growth procedure utilizes a He gas discharge combined with the down-stream introduction of trimethylgallium (TMGa) and nitrogen. Both cubic [1111 and wurtzitic [0001] GaN epitaxial films have been achieved on (0001) sapphire substrates. Differences in substrate growth temperatures are believed to account for the different observed phases. A comparative study pertaining to the microstructural, optical and electrical properties of the α-GaN and β-GaN heteroepitaxial films is presented. Also reported for the first time is the Raman spectroscopy data for cubic GaN.

Growth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxy

Nano Research ◽  
2016 ◽  
Vol 10 (2) ◽  
pp. 672-682 ◽  
Author(s):  
Alexander Berg ◽  
Philippe Caroff ◽  
Naeem Shahid ◽  
Mark N. Lockrey ◽  
Xiaoming Yuan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Epitaxy ◽  
Selective Area

Searching for the Influence of the Sapphire Nitridation Conditions on GaN Films Grown by Cyclic PLD

2002 ◽  
Vol 743 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
L. Melo ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Surface Morphology ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Optical Quality ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Sapphire Substrates ◽  
Structure Surface ◽  
Excitonic Luminescence

AbstractWe have deposited highly c-axis oriented GaN films on sapphire by the Cyclic Pulsed Laser Deposition Technique. Nitridation of the sapphire substrates for these samples was performed at 200 °C, 400 °C and 600 °C. For that purposed, we used a radio frequency nitrogen plasma during four hours. The films were compared in terms of crystal structure, surface morphology and optical quality. Although small, the biggest differences were detected in the surface morphology of the films. Additionally, a typical GaN sample nitridated at 200 °C was analysed by photoluminescence and showed the typical donor bound excitonic luminescence (D0X ) transition at 3.47 eV and a line near 3.42 eV. These lines show a FWHM of 20 meV and 30 meV at 13K, respectively.

Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1998 ◽  
Vol 537 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

AbstractControl of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

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