Substrate Heating Effects in Excimer Laser Planarization of Aluminum

1989 ◽  
Vol 158 ◽  
Author(s):  
Robert J. Baseman ◽  
Joseph C. Andreshak
Keyword(s):  
Excimer Laser ◽  
Damage Threshold ◽  
Sample Temperature ◽  
Temperature Sensitive ◽  
Model Calculations ◽  
Substrate Heating ◽  
Temperature Distributions ◽  
Heating Effects ◽  
Substrate Temperatures ◽  
Sample Damage

ABSTRACTSubstantial improvements in excimer laser planarization processes are observed with substrate heating. Cavities, associated with filling of high aspect ratio vias at low substrate temperature, can be eliminated by substrate heating. Damage associated with pulse overlap regions can be temperature sensitive, and is reduced as substrate temperatures areincreased. While required fluences for planarization and sample damage both decrease as the sample temperature increases, the relative insensitivity of the damage threshold generally results in larger process windows at higher temperatures. We also report model calculations of the effect of substrate heating on sample temperature distributions and the durations of the laser driven melts.

Pulsed Excimer Laser (308 nm) Annealing Of Ion Implanted Silicon and Solar Cell Fabrication

1982 ◽  
Vol 13 ◽  
Author(s):  
D. H. Lowndes ◽  
J. W. Cleland ◽  
W. H Christie ◽  
R. E EBY ◽  
G. E. Jellison ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Surface Damage ◽  
Laser Pulses ◽  
Open Circuit ◽  
Electrical Measurements ◽  
Large Area ◽  
Model Calculations ◽  
Substrate Heating ◽  
Dopant Redistribution

ABSTRACTA pulsed ultraviolet excimer laser (XeCl, 308 nm wavelength, 40 nsec FWHM pulse duration) has been successfully used for laser annealing of both boron- and arsenic-implanted silicon. TEM, SIMS, and sheet electrical measurements are used to characterize specimens. C-V and I-V measurements demonstrate that near-ideal p-n junctions are formed (diode perfection factor A = 1.2). Electrical activation of implanted ions by single laser pulses is essentially complete for energy densities Eℓ≥ 1.4 J/cm2 , far below the threshold for substantial surface damage ∽4.5 J/cm2. Melting model calculations are in good agreement with observed thresholds for dopant redistribution and for epitaxial regrowth. Changes in annealing behavior resulting from multiple (1,2,5) laser pulses are also reported. Finally, we demonstrate the use of scanned overlapping excimer laser pulses for fabrication of large area (2 cm2 ) solar cells with good performance characteristics. In contrast to pulsed ruby laser annealing, high open circuit voltages can be obtained without the use of substrate heating.

Time-Resolved Reflectivity Measurements of Silicon And Germanium Using A Pulsed Excimer Laser

1985 ◽  
Vol 51 ◽  
Author(s):  
G. E. Jellison ◽  
D. H. Lowndes ◽  
D. N. Mashburn ◽  
R. F. Wood
Keyword(s):  
Excimer Laser ◽  
Surface Region ◽  
Finite Energy ◽  
Time Resolved ◽  
Model Calculations ◽  
Near Surface ◽  
Maximum Reflectivity ◽  
Liquid Phases ◽  
Silicon And Germanium ◽  
Melt Duration

ABSTRACTTime-resolved reflectivity measurements of silicon and germanium have been made during pulsed KrF excimer laser irradiation. The reflectivity was measured simultaneously at both 1152 and 632.8 nm wavelengths, and the energy density of each laser pulse was monitored. The melt duration and the time of the onset of melting were measured and compared with the results of melting model calculations. For energy densities just above the melting threshold, it was found that the melt duration was never less than 20 ns for Si and 25 ns for Ge, while the maximum reflectivity increased from the value of the hot solid to that of the liquid over a finite energy range. These results, along with a reinterpretation of earlier time-resolved ellipsometry measurements, indicate that, during the melt-in process, the near-surface region does not melt homogeneously, but rather consists of a mixture of solid and liquid phases. The reflectivity at the onset of melting and in the liquid phase have been measured at both 632.8 and 1152 nm, and are compared with the results found in the literature.

Damage threshold measurements using femtosecond excimer laser

1993 ◽  
Author(s):  
Klaus R. Mann ◽  
G. Pfeifer ◽  
Guenter Reisse
Keyword(s):  
Excimer Laser ◽  
Damage Threshold

Substrate heating effects on ferromagnetic CoFeB thin films

Spintronics X ◽  
2017 ◽  
Author(s):  
Ryan O'Dell ◽  
Adam B. Phillips ◽  
Daniel G. Georgiev ◽  
Michael J. Heben
Keyword(s):  
Thin Films ◽  
Substrate Heating ◽  
Heating Effects

Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films

2001 ◽  
Vol 16 (7) ◽  
pp. 1883-1886 ◽  
Author(s):  
Kwang Soo Seol ◽  
Hironao Hiramatsu ◽  
Yoshimichi Ohki ◽  
In-Hoon Choi ◽  
Yong-Tea Kim
Keyword(s):  
Low Temperature ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Precursor Film ◽  
Excimer Laser Irradiation ◽  
Low Temperature Crystallization ◽  
Lower Temperature ◽  
Substrate Temperatures ◽  
Induced Crystallization ◽  
Temperature Crystallization

Transition of a SrBi2Ta2O9 precursor film from amorphous to crystalline was inducedby excimer laser irradiation. Both fluorite and perovskite crystalline structures in suchfilms were obtained by excimer laser irradiation at substrate temperatures between 200and 500 °C. Either an addition of excess bismuth in the precursor film or an increasein the substrate temperature enhanced the formation of the perovskite structure in theexcimer laser-induced annealing process, resulting in the perovskite crystalline phase ata relatively lower temperature of 500 °C. Such a low temperature is preferred whenSrBi2Ta2O9 is used in ferroelectric devices. The mechanism involved in thislaser-induced crystallization is also discussed.

Optical Investigations of Temperature Effects in 14/16 nm FinFETs

2017 ◽  
Author(s):  
Ivo Vogt ◽  
Christian Boit ◽  
Tomonori Nakamura ◽  
Babak Motamedi
Keyword(s):  
Integrated Circuits ◽  
Temperature Effects ◽  
Photon Emission ◽  
Physical Parameters ◽  
Substrate Heating ◽  
Self Heating ◽  
Heating Effects ◽  
Device Reliability ◽  
Emission Microscopy ◽  
Ingaas Detector

Abstract This paper provides a detailed analysis on the optical detection of temperature effects in FinFETs via (spectral) photon emission microscopy (SPEM/PEM) with InGaAs detector and electro-optical frequency mapping (EOFM, similar to LVI) for 14/16 nm Qualcomm Inc. FinFETs. It analyzes physical parameters of the FinFETs such as electron temperature and the relation between signal curve and operating condition of the device by photon emission slopes and spectra. The paper also traces device self-heating effects within the FinFETs by means of EOFM signal courses. With EOFM it was possible to detect self-heating effects of the FinFETs providing a further method to estimate device and substrate heating. Results showed that it is possible to obtain valuable device parameter information (for example, electron temperatures and self-heating) via optical investigations (PEM/ EOFM), which are not accessible electrically in modern integrated circuits. This information adds further details to device reliability and functionality approximations.

Excimer-Laser Crystallization of Si Films Via Bi-Directional Irradiation of Dual-Layer Films on Transparent Substrates

1995 ◽  
Vol 397 ◽  
Author(s):  
Jung H. Yoon ◽  
James S. Im
Keyword(s):  
Excimer Laser ◽  
Thermal Environment ◽  
Thermal Evolution ◽  
Bottom Layer ◽  
Lateral Growth ◽  
Laser Crystallization ◽  
Projection System ◽  
Substrate Heating ◽  
Excimer Laser Crystallization ◽  
Si Films

ABSTRACTIn this paper, we report on a new excimer-laser crystallization (ELC) method that is highly effective in extending the super-lateral growth (SLG) distance and which does not involve any preheating of the substrate. The technique utilizes bi-directional irradiation of a dual layer Si film stack (separated by an oxide layer) deposited on a quartz wafer. The top layer is irradiated with a projection system which transfers a mask image in order to produce grain-boundary-location-controlled (GLC) regions, and the bottom layer, upon irradiation with a uniform beam, acts as a medium that favorably affects the thermal evolution of the top layer. The technique is effective and attractive in that the heating is spatially and temporally localized in an optimal manner. The thermal environment required for extending the SLG distance, as is induced by the melting and solidification of the bottom layer, is physically regulated by the melting temperature of Si, and the enthalpy difference between liquid and solid can be used to initially store and subsequently release heat. Using the method, we were able to attain GLC regions with widths up to 10 μm in 1000-Å Si films without any substrate heating. We elaborate on the applicability of the method to various artificially controlled super-lateral growth (ACSLG) techniques, and discuss process optimization by means of varying the multilayer configuration.

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