Substrate heating effects on ferromagnetic CoFeB thin films

Spintronics X ◽  
2017 ◽  
Author(s):  
Ryan O'Dell ◽  
Adam B. Phillips ◽  
Daniel G. Georgiev ◽  
Michael J. Heben
Keyword(s):  
Thin Films ◽  
Substrate Heating ◽  
Heating Effects

Substrate heating effects on composition, structure and ferromagnetic resonance properties of CoFeB thin films

2019 ◽  
Vol 476 ◽  
pp. 516-523
Author(s):  
Ryan A. O'Dell ◽  
Adam B. Phillips ◽  
Daniel G. Georgiev ◽  
John G. Jones ◽  
Gail J. Brown ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferromagnetic Resonance ◽  
Substrate Heating ◽  
Heating Effects ◽  
Resonance Properties ◽  
Composition Structure

The substrate heating effects on ion-beam sputter-deposited CuInS2 and GaP thin films

1982 ◽  
Vol 11-12 ◽  
pp. 544-552 ◽  
Author(s):  
Jiann-Ruey Chen ◽  
Chi-Chen Nee ◽  
Huey-Liang Hwang ◽  
Learong Lu ◽  
Yuen-Chung Liu
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Substrate Heating ◽  
Heating Effects ◽  
Sputter Deposited

scholarly journals Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 724
Author(s):  
Tong Li ◽  
Masaya Ichimura
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Optical Properties ◽  
Surface Morphology ◽  
Magnesium Hydroxide ◽  
Dry Deposition ◽  
Visible Range ◽  
Substrate Heating ◽  
Water Effects ◽  
Deposition Conditions

Magnesium hydroxide (Mg(OH)2) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO3)2 and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)2 thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)2 were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 105 Ωcm. Thus, the transparent and semiconducting Mg(OH)2 thin films were successfully prepared by DDD.

Structure and Characterization of Sputtered Thin Films Based on Lead Titanate.

1991 ◽  
Vol 230 ◽  
Author(s):  
A. Pignolet ◽  
P. E. Schmid ◽  
L. Wang ◽  
F. Lévy
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Titanate ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Pyroelectric Coefficient ◽  
Amorphous Films ◽  
Substrate Heating ◽  
Ferroelectric Hysteresis

AbstractPure and doped lead-titanate (PT) and lead-zirconate-titanate (PZT) thin films have been deposited on platinum-coated silicon by rf-magnetron sputtering from pressed powder targets. The films have been deposited without substrate heating. The amorphous films were then annealed in an oxygen flow. The structure of the films is tetragonal or rhombohedral depending on composition. The electrical resistivity, dielectric permittivity, ferroelectric hysteresis and pyroelectric coefficient are reported.

Photophysics of pentacene thin films: The role of exciton fission and heating effects

2011 ◽  
Vol 84 (19) ◽  
Author(s):  
Akshay Rao ◽  
Mark W. B. Wilson ◽  
Sebastian Albert-Seifried ◽  
Riccardo Di Pietro ◽  
Richard H. Friend
Keyword(s):  
Thin Films ◽  
Heating Effects

Laser Densification of Sol-Gel Derived TiO2 - Thin Films.

1992 ◽  
Vol 271 ◽  
Author(s):  
N. Arfsten ◽  
B. Lintner ◽  
M. Heming ◽  
O. Anderson ◽  
C. R. Otter-Mann
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Substrate Heating ◽  
Laser Densification ◽  
Bulk Substrate

ABSTRACTLaser substrate heating is discussed as an alternative for the densification of sol -gel thin films. Homogeneous films of n(550 nm) = 2.30 could be obtained, keeping the bulk substrate temperature below 80 °C.

Optical Investigations of Temperature Effects in 14/16 nm FinFETs

2017 ◽  
Author(s):  
Ivo Vogt ◽  
Christian Boit ◽  
Tomonori Nakamura ◽  
Babak Motamedi
Keyword(s):  
Integrated Circuits ◽  
Temperature Effects ◽  
Photon Emission ◽  
Physical Parameters ◽  
Substrate Heating ◽  
Self Heating ◽  
Heating Effects ◽  
Device Reliability ◽  
Emission Microscopy ◽  
Ingaas Detector

Abstract This paper provides a detailed analysis on the optical detection of temperature effects in FinFETs via (spectral) photon emission microscopy (SPEM/PEM) with InGaAs detector and electro-optical frequency mapping (EOFM, similar to LVI) for 14/16 nm Qualcomm Inc. FinFETs. It analyzes physical parameters of the FinFETs such as electron temperature and the relation between signal curve and operating condition of the device by photon emission slopes and spectra. The paper also traces device self-heating effects within the FinFETs by means of EOFM signal courses. With EOFM it was possible to detect self-heating effects of the FinFETs providing a further method to estimate device and substrate heating. Results showed that it is possible to obtain valuable device parameter information (for example, electron temperatures and self-heating) via optical investigations (PEM/ EOFM), which are not accessible electrically in modern integrated circuits. This information adds further details to device reliability and functionality approximations.

Effect of RF Sputtering Power on the Structural, Optical and Hydrophobic Properties of SiNx Thin Film

2011 ◽  
Vol 194-196 ◽  
pp. 2340-2346 ◽  
Author(s):  
Hong Yu Liang ◽  
Qing Nan Zhao ◽  
Feng Gao ◽  
Wen Hui Yuan ◽  
Yu Hong Dong
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Silicon Nitride ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Hydrophobic Properties ◽  
X Ray ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Sputtering Power

With a mixture gas of N2 and Ar, silicon nitride thin films were deposited on glass substrates by different radio frequency (RF) magnetron sputtering power without intentional substrate heating. The chemical composition, phase structure, surface morphology, optical properties, refractive index, hydrophobic properties of the films were characterized by X-ray energy dispersive spectroscopy(EDS), X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), ultraviolet-visible spectroscopy(UV-Vis), nkd-system spectrophotometer and CA-XP150 contact angle analyzer, respectively. The results showed that silicon nitride thin films were amorphous and rich in Si; the transmittance reduced but refractive index and surface roughness increased; and the hydrophobic properties of SiNx became better with the increase of RF power.

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