Damage threshold measurements using femtosecond excimer laser

1993 ◽  
Author(s):  
Klaus R. Mann ◽  
G. Pfeifer ◽  
Guenter Reisse
Keyword(s):  
Excimer Laser ◽  
Damage Threshold

Analysis of damage threshold of K9 glass irradiated by 248-nm KrF excimer laser

2016 ◽  
Vol 55 (2) ◽  
pp. 027102 ◽  
Author(s):  
Xi Wang ◽  
Jingzhen Shao ◽  
Hua Li ◽  
Jinsong Nie ◽  
Xiaodong Fang
Keyword(s):  
Excimer Laser ◽  
Damage Threshold ◽  
Krf Excimer Laser ◽  
K9 Glass

Laser-induced damage threshold and absorption measurements in rare-gas-halide excimer laser components

1989 ◽  
Vol 74 (3-4) ◽  
pp. 253-260 ◽  
Author(s):  
Masahide Itoh ◽  
Akira Endo ◽  
Kazuo Kuroda ◽  
Shuntaro Watanabe ◽  
Iwao Ogura
Keyword(s):  
Excimer Laser ◽  
Damage Threshold ◽  
Rare Gas ◽  
Laser Induced Damage ◽  
Absorption Measurements

Substrate Heating Effects in Excimer Laser Planarization of Aluminum

1989 ◽  
Vol 158 ◽  
Author(s):  
Robert J. Baseman ◽  
Joseph C. Andreshak
Keyword(s):  
Excimer Laser ◽  
Damage Threshold ◽  
Sample Temperature ◽  
Temperature Sensitive ◽  
Model Calculations ◽  
Substrate Heating ◽  
Temperature Distributions ◽  
Heating Effects ◽  
Substrate Temperatures ◽  
Sample Damage

ABSTRACTSubstantial improvements in excimer laser planarization processes are observed with substrate heating. Cavities, associated with filling of high aspect ratio vias at low substrate temperature, can be eliminated by substrate heating. Damage associated with pulse overlap regions can be temperature sensitive, and is reduced as substrate temperatures areincreased. While required fluences for planarization and sample damage both decrease as the sample temperature increases, the relative insensitivity of the damage threshold generally results in larger process windows at higher temperatures. We also report model calculations of the effect of substrate heating on sample temperature distributions and the durations of the laser driven melts.

Removal of Plasma-Etch-Induced Polymers from Submicron Via Holes by Excimer Laser Ablation

1998 ◽  
Vol 526 ◽  
Author(s):  
Y. F. Lu ◽  
Y. P. Lee ◽  
M. S. Zhou
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Incident Angle ◽  
Damage Threshold ◽  
Ablation Rate ◽  
Laser Cleaning ◽  
Rate Data ◽  
Excimer Laser Ablation ◽  
Reflective Coating ◽  
Via Holes

AbstractA relatively new approach in removing the sidewall and bottom polymers resulting from reactive ion etching of via holes, using a non-contact dry excimer laser cleaning technique has been investigated. Pulsed excimer laser ablation at 248 nm has been found to be capable of removing the via-etch-induced polymers at fluences limited by the damage threshold of the underlying Al-Cu metal film with TiN anti-reflective coating of 250-280 mJ cm-2. A fluence window of 150-200 mJ cm-2 for efficient laser cleaning is also determined from the ablation rate data using the relation in the limit of Beer's law absorption. Experimental results have also shown that the ablation rate when irradiating at an angle is not only comparable to that at vertical incidence, but even register higher values for most of the ablation rate data obtained. An optimum incident angle for laser cleaning of 45° can be determined from the results.

Excimer laser conditionning of KDP: influence of the laser parameters and crystal orientation on the laser damage threshold

2005 ◽  
Author(s):  
David Damiani ◽  
Herve Piombini ◽  
Daniel Plessis ◽  
Thierry Donval ◽  
Laurent Lamaignere ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Crystal Orientation ◽  
Damage Threshold ◽  
Laser Damage Threshold ◽  
Laser Damage ◽  
Laser Parameters

The observation of nano-voids in Au thin films

1987 ◽  
Vol 45 ◽  
pp. 366-367
Author(s):  
William Krakow
Keyword(s):  
Thin Films ◽  
Melting Point ◽  
Present Author ◽  
Stacking Faults ◽  
Damage Threshold ◽  
Ionic Species ◽  
Rare Gases ◽  
Chain Defects ◽  
Vacancy Chains ◽  
Au Thin Films

It has long been known that defects such as stacking faults and voids can be quenched from various alloyed metals heated to near their melting point. Today it is common practice to irradiate samples with various ionic species of rare gases which also form voids containing solidified phases of the same atomic species, e.g. ref. 3. Equivalently, electron irradiation has been used to produce damage events, e.g. ref. 4. Generally all of the above mentioned studies have relied on diffraction contrast to observe the defects produced down to a dimension of perhaps 10 to 20Å. Also all these studies have used ions or electrons which exceeded the damage threshold for knockon events. In the case of higher resolution studies the present author has identified vacancy and interstitial type chain defects in ion irradiated Si and was able to identify both di-interstitial and di-vacancy chains running through the foil.

Environmental cell studies of deformation and fracture

1990 ◽  
Vol 48 (4) ◽  
pp. 516-517
Author(s):  
H. K. Birnbaum ◽  
I. M. Robertson
Keyword(s):  
National Laboratory ◽  
Argonne National Laboratory ◽  
Damage Threshold ◽  
Chromatic Aberration ◽  
Good Choice ◽  
Point Of View ◽  
Deformation And Fracture ◽  
Environmental Cell ◽  
Gas Molecules ◽  
The University

Studies of the effects of hydrogen environments on the deformation and fracture of fcc, bcc and hep metals and alloys have been carried out in a TEM environmental cell. The initial experiments were performed in the environmental cell of the HVEM facility at Argonne National Laboratory. More recently, a dedicated environmental cell facility has been constructed at the University of Illinois using a JEOL 4000EX and has been used for these studies. In the present paper we will describe the general design features of the JEOL environmental cell and some of the observations we have made on hydrogen effects on deformation and fracture.The JEOL environmental cell is designed to operate at 400 keV and below; in part because of the available accelerating voltage of the microscope and in part because the damage threshold of most materials is below 400 keV. The gas pressure at which chromatic aberration due to electron scattering from the gas molecules becomes excessive does not increase rapidly with with accelerating voltage making 400 keV a good choice from that point of view as well. A series of apertures were placed above and below the cell to control the pressures in various parts of the column.

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