Room‐temperature migration and interaction of ion beam generated defects in crystalline silicon

1996 ◽  
Vol 68 (24) ◽  
pp. 3422-3424 ◽  
Author(s):  
Vittorio Privitera ◽  
Salvatore Coffa ◽  
Francesco Priolo ◽  
Kim Kyllesbech Larsen ◽  
Giovanni Mannino
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam

Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena

1996 ◽  
Vol 438 ◽  
Author(s):  
F. Priolo ◽  
V. Privitera ◽  
S. Coffa ◽  
S. Libertino
Keyword(s):  
Diffusion Coefficient ◽  
Long Range ◽  
Point Defects ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Temperature Diffusion ◽  
Range Migration ◽  
Limited Diffusion ◽  
Vacancy Type Defect

AbstractOur recent work on the room temperature migration and trapping phenomena of ion beam generated point defects in crystalline Si is reviewed. It is shown that a small fraction (∼ 10−6) of the defects generated at the surface by a shallow implant is injected into the bulk. These defects undergo a long range trap-limited diffusion and interact with both impurities, dopants and preexisting defects along their path. In particular, these interactions result in dopant deactivation and/or partial annihilation of pre-existing vacancy-type defect markers. It is found that in highly pure, epitaxial Si layers, these effects extend to several microns from the surface, demonstrating a long range migration of point defects at room temperature. By a detailed analysis of the experimental evidences we have identified the Si self-interstitials as the major responsible for the observed phenomena. This allowed us to give a lower limit of 6×10−11-cm2/s for the room temperature diffusion coefficient of the Si self-interstitials. Room temperature trap-limited migration of vacancies is also detected as a broadening in the divacancy profile of as implanted samples. In this case the room temperature diffusion coefficient of vacancies has been found to be ≥3 × 10−12 cm 2/s. These data are presented and their implications discussed.

Room temperature migration of ion beam injected point defects in crystalline silicon

1996 ◽  
Vol 120 (1-4) ◽  
pp. 9-13 ◽  
Author(s):  
Vittorio Privitera ◽  
Salvatore Coffa ◽  
Francesco Priolo ◽  
Kim Kyllesbech Larsen ◽  
Sebania Libertino ◽  
...  
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam

Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena

1996 ◽  
Vol 439 ◽  
Author(s):  
F. Priolo ◽  
V. Privitera ◽  
S. Coffa ◽  
S. Libertino
Keyword(s):  
Diffusion Coefficient ◽  
Long Range ◽  
Point Defects ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Temperature Diffusion ◽  
Range Migration ◽  
Limited Diffusion ◽  
Vacancy Type Defect

AbstractOur recent work on the room temperature migration and trapping phenomena of ion beam generated point defects in crystalline Si is reviewed. It is shown that a small fraction (˜10−6) of the defects generated at the surface by a shallow implant is injected into the bulk. These defects undergo a long range trap-limited diffusion and interact with both impurities, dopants and preexisting defects along their path. In particular, these interactions result in dopant deactivation and/or partial annihilation of pre-existing vacancy-type defect markers. It is found that in highly pure, epitaxial Si layers, these effects extend to several microns from the surface, demonstrating a long range migration of point defects at room temperature. By a detailed analysis of the experimental evidences we have identified the Si self-interstitials as the major responsible for the observed phenomena. This allowed us to give a lower limit of 6 × 10−11 cm2/s for the room temperature diffusion coefficient of the Si self-interstitials. Room temperature trap-limited migration of vacancies is also detected as a broadening in the divacancy profile of as implanted samples. In this case the room temperature diffusion coefficient of vacancies has been found to be ≥3 × 10−12 cm2/s. These data are presented and their implications discussed.

Stress and Plastic Flow in Silicon During Amorphization by Ion-Bombardment

1989 ◽  
Vol 157 ◽  
Author(s):  
Cynthia A. Volkert
Keyword(s):  
Amorphous Silicon ◽  
Plane Stress ◽  
Laser Scanning ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Out Of Plane ◽  
Curvature Measurements

ABSTRACTThe in-plane stress in silicon wafers during amorphization by ion-bombardment was determined from wafer curvature measurements using an in-situ laser scanning technique. Measurements were made during room temperature bombardment with 2 MeV Ne, Si, Ar, Kr, and Xe ions. In all experiments, compressive stress was built-up in the bombarded region as a function of the fluence, until a maximum was reached at the dose required to form amorphous silicon. During further amorphization by bombardment, the stress decreased and eventually stabilized. If ion bombardment was interrupted during amorphization, a stress increase was observed over a period of several minutes; when the beam was turned on again, the stress returned immediately to the value measured before interruption. Step height measurements were performed on implanted wafers to determine the out-of-plane strain, and RBS was used to determine the damage profiles. A model is proposed that describes the behavior in terms of the expansion of crystalline silicon by the creation of defects and the flow of amorphous silicon under the ion beam.

Nanocomposite Polyurethane Foams Via POSS Blends

2002 ◽  
Vol 733 ◽  
Author(s):  
Brock McCabe ◽  
Steven Nutt ◽  
Brent Viers ◽  
Tim Haddad
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polyurethane Foams ◽  
Development Projects ◽  
Polymer Systems ◽  
Polyurethane Resin ◽  
Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

Compression of Single-Crystal Micropillars of the Γ Intermetallic Phase in the Fe-Zn System

2014 ◽  
Vol 922 ◽  
pp. 264-269 ◽  
Author(s):  
Masahiro Inomoto ◽  
Norihiko L. Okamoto ◽  
Haruyuki Inui
Keyword(s):  
Single Crystal ◽  
Deformation Behavior ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Intermetallic Phase ◽  
Gamma Phase ◽  
Compression Tests ◽  
Slip Direction ◽  
Beam Method

The deformation behavior of the Γ (gamma) phase in the Fe-Zn system has been investigated via room-temperature compression tests of single-crystal micropillar specimens fabricated by the focused ion beam method. Trace analysis of slip lines indicates that {110} slip occurs for the specimens investigated in the present study. Although the slip direction has not been uniquely determined, the slip direction might be <111> in consideration of the crystal structure of the Γ phase (bcc).

Investigation of the Hydrogen Transport Processes in Crystalline Silicon of n-Type Conductivity

2007 ◽  
Vol 131-133 ◽  
pp. 425-430 ◽  
Author(s):  
Anis M. Saad ◽  
Oleg Velichko ◽  
Yu P. Shaman ◽  
Adam Barcz ◽  
Andrzej Misiuk ◽  
...  
Keyword(s):  
Hydrogen Concentration ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Transport Processes ◽  
Concentration Profiles ◽  
Hydrogen Transport ◽  
Hydrogen Atoms ◽  
Near Surface ◽  
Type Conductivity ◽  
Hydrogen Molecules

The silicon substrates were hydrogenated at approximately room temperature and hydrogen concentration profiles vs. depth have been measured by SIMS. Czochralski grown (CZ) wafers, both n- and p-type conductivity, were used in the experiments under consideration. For analysis of hydrogen transport processes and quasichemical reactions the model of hydrogen atoms diffusion and quasichemical reactions is proposed and the set of equations is obtained. The developed model takes into account the formation of bound hydrogen in the near surface region, hydrogen transport as a result of diffusion of hydrogen molecules 2 H , diffusion of metastable complexes * 2 H and diffusion of nonequilibrium hydrogen atoms. Interaction of 2 H with oxygen atoms and formation of immobile complexes “oxygen atom - hydrogen molecule” (O - H2 ) is also taken into account to explain the hydrogen concentration profiles in the substrates of n-type conductivity. The computer simulation based on the proposed equations has shown a good agreement of the calculated hydrogen profiles with the experimental data and has allowed receiving a value of the hydrogen molecules diffusivity at room temperature.

Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature

2006 ◽  
Vol 504 (1-2) ◽  
pp. 269-273
Author(s):  
H.Y. Chan ◽  
M.P. Srinivasan ◽  
F. Benistant ◽  
K.R. Mok ◽  
Lap Chan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Continuum Modeling ◽  
Implantation Damage ◽  
Post Implantation
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