Integrated (Pb,La)(Zr,Ti)O3 Heterostructure Waveguide Devices Fabricated by Solid-Phase Epitaxy

1999 ◽  
Vol 597 ◽  
Author(s):  
K. Nashimoto ◽  
S. Nakamura ◽  
H. Moriyama ◽  
K. Haga ◽  
M. Watanabe ◽  
...  
Keyword(s):  
Low Voltage ◽  
Solid Phase ◽  
Wet Etching ◽  
Propagation Loss ◽  
Beam Deflection ◽  
Solid Phase Epitaxy ◽  
Te Mode ◽  
Tm Mode ◽  
Electro Optic ◽  
Channel Waveguides

AbstractHeterostructures of a Pb(Zr,Ti)O3 (PZT) waveguide/(Pb,La)(Zr,Ti)O3 (PLZT) system buffer layer were grown on a Nb-doped SrTiO3 (Nb:ST) substrate by solid-phase epitaxy. The propagation loss in the PLZT heterostructure waveguides was on the order of I dB/cm. An electro-optic beam deflection device with an ITO prism electrode on the surface of the PLZT heterostructure waveguide presented efficient deflection of the coupled laser beam by applying a voltage between the electrode and the substrate. A beam deflection greater than 10 mrad at 5 V and frequency response as fast as 13 MHz were observed. An apparent electro-optic coefficient as large as 39 pmJV was estimated from the deflection characteristics for the TE mode and TM mode suggesting the polarization independent nature of the PZT waveguide. For integrating the electrooptic PLZT heterostructure waveguides, channel waveguides were fabricated in the PZT waveguides using a simple wet-etching process. Based on a low-voltage drive structure, lowloss waveguide process, and fine patterning process, a fabricated digital matrix switch showed a – 10 dB cross-talk at a voltage as low as 7.5 V.

Low-voltage drive electro-optic Pb(Zr,Ti)O 3 waveguide devices fabricated by solid-phase epitaxy

1999 ◽  
Author(s):  
Keiichi Nashimoto ◽  
Shigetoshi Nakamura ◽  
Hiroaki Moriyama ◽  
Masao Watanabe ◽  
Eisuke Osakabe ◽  
...  
Keyword(s):  
Low Voltage ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Waveguide Devices ◽  
Electro Optic

PZT Electro-Optic Waveguide Devices Fabricated by Solid-Phase Epitaxy

1997 ◽  
Vol 493 ◽  
Author(s):  
Keiichi Nashimoto ◽  
Shigetoshi Nakamura ◽  
Hiroaki Moriyama ◽  
Masao Watanabe ◽  
Eisuke Osakabe
Keyword(s):  
Optical Waveguides ◽  
Solid Phase ◽  
Solution Process ◽  
Propagation Loss ◽  
Metal Alkoxide ◽  
Solid Phase Epitaxy ◽  
Optical Propagation ◽  
Electro Optic ◽  
Pzt Thin Film ◽  
Conductive Substrate

ABSTRACTHigh quality epitaxial PZT optical waveguides have been grown by solid-phase epitaxy based on metal alkoxide solution process. Optical propagation loss was 4 dB/cm in epitaxial PZT thin film optical waveguides grown on SrTiO3 substrates. Epitaxial PZT optical waveguides were grown on Nb doped conductive SrTiO3 substrates, since considerable reduction in drive voltage will be expected when top electrode / optical waveguide / conductive substrate structures are realized. Propagation loss was relatively large, as compared with the structure using non-dope insulative substrates. Preliminary electrooptic deflection devices were fabricated by preparing prism electrodes on the surface of the PZT optical waveguides. Efficient deflection/switching of coupled laser beam in the PZT optical waveguides as large as 26 mrad was observed by applying 70 volts between prism electrode and Nb doped SrTiO3 substrates.

Advanced Ti-Implanted Optical Waveguides in LiNbO3

1986 ◽  
Vol 88 ◽  
Author(s):  
Ch. Buchal ◽  
P. R. Ashley ◽  
D. K. Thomas ◽  
B. R. Appleton
Keyword(s):  
Low Temperatures ◽  
Optical Waveguides ◽  
Crystalline State ◽  
Solid Phase ◽  
Equilibrium Phase ◽  
Planar Waveguides ◽  
Solid Phase Epitaxy ◽  
Low Loss ◽  
Versatile Technique ◽  
Channel Waveguides

ABSTRACTLiNbO3 is the best substrate for modulators and switches for integrated optics. Efficient low loss waveguides for light in LiNbO3 are formed by introducing Ti-ions into its lattice, thus increasing locally the ordinary and the extraordinary indices of refraction. We are the first to use the very versatile technique of ion-implantation to administer Ti into LiNbO3. This implantation process offers the possibility to introduce significantly more Ti into a well-defined volume than conventional diffusion techniques. During this process first an amorphous non-equilibrium phase is generated, which has to be kept at low temperatures in order to prevent segregation. Subsequent thermal treatment leads to solid phase epitaxy and restores the desired stable crystalline state. We have used this technique to fabricate excellent planar waveguides, channel waveguides and Mach-Zehnder modulators.

scholarly journals A Broadband Polarization-Insensitive Graphene Modulator Based on Dual Built-in Orthogonal Slots Plasmonic Waveguide

2021 ◽  
Vol 11 (4) ◽  
pp. 1897
Author(s):  
Wei Chen ◽  
Yan Xu ◽  
Yang Gao ◽  
Lanjing Ji ◽  
Xibin Wang ◽  
...  
Keyword(s):  
High Speed ◽  
Transverse Electric ◽  
Modulation Depth ◽  
Transverse Magnetic ◽  
Plasmonic Effect ◽  
Te Mode ◽  
Tm Mode ◽  
Electro Optic ◽  
Polarization Insensitive ◽  
Electro Optic Modulator

A broadband polarization-insensitive graphene modulator has been proposed. The dual built-in orthogonal slots waveguide allows polarization independence for the transverse electric (TE) mode and the transverse magnetic (TM) mode. Due to the introduction of metal slots in both the vertical and horizontal directions, the optical field as well as the electro-absorption of graphene are enhanced by the plasmonic effect. The proposed electro-optic modulator shows a modulation depth of 0.474 and 0.462 dB/μm for two supported modes, respectively. An ultra-low effective index difference of 0.001 can be achieved within the wavelength range from 1100 to 1900 nm. The 3 dB-bandwidth is estimated to be 101 GHz. The power consumption is 271 fJ/bit at a modulation length of 20 μm. The proposed modulator provides high speed broadband solutions in microwave photonic systems.

Patterning of (Pb, La)(Zr, Ti)O3 waveguides for fabricating micro-optics using wet etching and solid-phase epitaxy

1999 ◽  
Vol 75 (8) ◽  
pp. 1054-1056 ◽  
Author(s):  
K. Nashimoto ◽  
K. Haga ◽  
M. Watanabe ◽  
S. Nakamura ◽  
E. Osakabe
Keyword(s):  
Solid Phase ◽  
Wet Etching ◽  
Solid Phase Epitaxy ◽  
Micro Optics

Nickel-Indiffusion Waveguide for TE-TM Mode Splitter in Lithium Niobate

1997 ◽  
Vol 08 (04) ◽  
pp. 621-642 ◽  
Author(s):  
Way-Seen Wang ◽  
Yu-Pin Liao ◽  
Chih-Hua Yang
Keyword(s):  
Lithium Niobate ◽  
Optical Waveguides ◽  
Propagation Loss ◽  
Dispersion Process ◽  
Tm Mode ◽  
Electro Optic ◽  
Dependent Polarization ◽  
First Time ◽  
Mode Splitter ◽  
Versus Concentration

Optical waveguides fabricated by nickel indiffusion on lithium niobate are reviewed. In particular, the fabrication process, index change versus concentration, wavelength dispersion, process-dependent polarization, propagation loss, and electro-optic modulation of the nickel indiffusion waveguide are discussed. To improve the confinement of single-ordinary polarization waveguide fabricated by nickel indiffusion, a novel waveguide made by zinc and nickel indiffusion is presented for the first time. Though the measured propagation loss of the waveguide is larger, the measured output power contours are found more symmetric. Moreover, several TE-TM mode splitters using one or more nickel indiffusion waveguides for the complete mode sorting effect are discussed.

Fabrication of electro-optic Pb(Zr, Ti)O3 heterostructure waveguides on Nb-doped SrTiO3 by solid-phase epitaxy

1999 ◽  
Vol 74 (19) ◽  
pp. 2761-2763 ◽  
Author(s):  
K. Nashimoto ◽  
S. Nakamura ◽  
T. Morikawa ◽  
H. Moriyama ◽  
M. Watanabe ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Electro Optic

scholarly journals Mid-Infrared ZnS Ridge Waveguide Fabricated by Femtosecond Laser Ablation Combined With Ion Irradiation

2021 ◽  
Vol 9 ◽  
Author(s):  
Xinbin Zhang ◽  
Yazhou Cheng ◽  
Yongcheng Zhang
Keyword(s):  
Laser Ablation ◽  
Femtosecond Laser ◽  
Ion Irradiation ◽  
Femtosecond Laser Ablation ◽  
Propagation Loss ◽  
Te Mode ◽  
Tm Mode ◽  
Large Lattice ◽  
Ridge Waveguides ◽  
Lattice Damage

We have experimentally studied the fabrication of ridge waveguides in zinc sulfide (ZnS) crystal by femtosecond laser ablation combined with Kr8+ ion irradiation. At the wavelength of 4 μm, the waveguide at TE mode shows better guiding properties than TM mode. The transmission performance of the waveguide is improved by using thermal annealing technology to reduce the color centers and point defects in the waveguide. The waveguide propagation loss at TE mode at 4 μm wavelength is reduced to as low as 0.6 dB/cm after annealing. Raman spectroscopy shows that Kr8+ ion irradiation does not cause large lattice damage to ZnS crystal.

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