Optical Waveguides And Electro-Optical Devices In Heterojunction And Quantum Well Structures Of III-V Compound Semiconductors A Review

1987 ◽  
Author(s):  
William S. C. Chang ◽  
Timothy E. Van Eck
1987 ◽  
Vol 104 ◽  
Author(s):  
P. M. Petroff

ABSTRACTThis paper reviews the principal processes involved in the enhanced interdiffusion of elements across interfaces between two III-V compound semiconductors. Implantation enhanced interdiffusion effects in GaAs-Gal−xAlxAs are compared for single Quantum Well structures and Superlattice structures. Measurements indicate a marked difference in the annealing and enhanced interdiffusion kinetics between these 2 types of structures.


Author(s):  
D. Sarid ◽  
W. M. Gibbons ◽  
H. M. Gibbs ◽  
M. E. Warren ◽  
S. W. Koch ◽  
...  

1996 ◽  
Vol 80 (6) ◽  
pp. 3179-3183 ◽  
Author(s):  
Ayman M. Kan’an ◽  
Patrick LiKamWa ◽  
Mitra‐Dutta ◽  
Jagadeesh Pamulapati

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