A study of initial transient phenomena in the chemical vapor deposition process using silane plasma

Yoshikazu Nakayama; Tetsuro Ohtsuchi; Takao Kawamura

doi:10.1063/1.339758

A study of initial transient phenomena in the chemical vapor deposition process using silane plasma

Journal of Applied Physics ◽

10.1063/1.339758 ◽

1987 ◽

Vol 62 (3) ◽

pp. 1022-1028 ◽

Cited By ~ 4

Author(s):

Yoshikazu Nakayama ◽

Tetsuro Ohtsuchi ◽

Takao Kawamura

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Chemical Vapor Deposition Process ◽

Transient Phenomena ◽

Initial Transient ◽

Silane Plasma ◽

Vapor Deposition Process

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Initial transient phenomena in the plasma enhanced chemical vapor deposition process

Applied Physics Letters ◽

10.1063/1.95136 ◽

1984 ◽

Vol 45 (2) ◽

pp. 134-136 ◽

Cited By ~ 18

Author(s):

V. S. Nguyen ◽

P. H. Pan

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Chemical Vapor Deposition Process ◽

Transient Phenomena ◽

Initial Transient ◽

Vapor Deposition Process

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ANALYSIS OF HEAT AND MASS TRANSFER DURING MULTI-WAFER LOW PRESSURE CHEMICAL VAPOR DEPOSITION PROCESS

Proceeding of International Heat Transfer Conference 11 ◽

10.1615/ihtc11.240 ◽

1998 ◽

Author(s):

K.S. Park ◽

M. Choi

Keyword(s):

Mass Transfer ◽

Chemical Vapor Deposition ◽

Heat And Mass Transfer ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Low Pressure ◽

Chemical Vapor Deposition Process ◽

Pressure Chemical ◽

Vapor Deposition Process

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An analysis of the effect of the solid layer for the modified chemical vapor deposition process

Wärme- und Stoffübertragung ◽

10.1007/bf01541187 ◽

1993 ◽

Vol 28 (4) ◽

pp. 169-176 ◽

Cited By ~ 5

Author(s):

Y. T. Lin ◽

M. Choi ◽

R. Greif

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Chemical Vapor Deposition Process ◽

Solid Layer ◽

Vapor Deposition Process

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The Modified Chemical Vapor Deposition Process in a Concentric Annulus: An Extension for Focused High-Rate Deposition

Aerosol Science and Technology ◽

10.1080/02786828808959211 ◽

1988 ◽

Vol 9 (3) ◽

pp. 237-249 ◽

Cited By ~ 18

Author(s):

M. Fiebig ◽

M. Hilgenstock ◽

H.-A. Riemann

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

High Rate ◽

Chemical Vapor Deposition Process ◽

Concentric Annulus ◽

Vapor Deposition Process

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In Situ Monitoring of the Products from the SiH4 + WF 6 Tungsten Chemical Vapor Deposition Process by Micro‐Volume Mass Spectrometry

Journal of The Electrochemical Society ◽

10.1149/1.2221130 ◽

1993 ◽

Vol 140 (12) ◽

pp. 3588-3590 ◽

Cited By ~ 8

Author(s):

Roger W. Cheek ◽

Jeffry A. Kelber ◽

James G. Fleming ◽

Robert S. Blewer ◽

Richard D. Lujan

Keyword(s):

Mass Spectrometry ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

In Situ Monitoring ◽

Chemical Vapor Deposition Process ◽

Vapor Deposition Process

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Effect of Si–H Bond on the Gas-Phase Chemistry of Trimethylsilane in the Hot Wire Chemical Vapor Deposition Process

The Journal of Physical Chemistry A ◽

10.1021/jp203966h ◽

2011 ◽

Vol 115 (37) ◽

pp. 10290-10298 ◽

Cited By ~ 17

Author(s):

Y. J. Shi ◽

X. M. Li ◽

R. Toukabri ◽

L. Tong

Keyword(s):

Chemical Vapor Deposition ◽

Gas Phase ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Chemical Vapor Deposition Process ◽

Hot Wire ◽

Gas Phase Chemistry ◽

Phase Chemistry ◽

Vapor Deposition Process

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GaAs crystal growth from coordination compounds using the organometallic chemical vapor deposition process for solar cells

Solar & Wind Technology ◽

10.1016/0741-983x(86)90044-5 ◽

1986 ◽

Vol 3 (1) ◽

pp. 21-25

Author(s):

A. Zaouk ◽

G. Constant

Keyword(s):

Solar Cells ◽

Chemical Vapor Deposition ◽

Crystal Growth ◽

Vapor Deposition ◽

Coordination Compounds ◽

Chemical Vapor ◽

Deposition Process ◽

Chemical Vapor Deposition Process ◽

Gaas Crystal ◽

Vapor Deposition Process

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ChemInform Abstract: Some Physical Properties of Undoped Amorphous Silicon Prepared by a New Chemical Vapor Deposition Process Using Iodosilanes.

ChemInform ◽

10.1002/chin.199043028 ◽

1990 ◽

Vol 21 (43) ◽

Author(s):

G. TAMIZHMANI ◽

M. COCIVERA ◽

R. T. OAKLEY ◽

P. DEL BEL BELLUZ

Keyword(s):

Chemical Vapor Deposition ◽

Physical Properties ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Chemical Vapor Deposition Process ◽

Vapor Deposition Process

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Improved ultrathin oxynitride formed by thermal nitridation and low pressure chemical vapor deposition process

Applied Physics Letters ◽

10.1063/1.108428 ◽

1992 ◽

Vol 61 (15) ◽

pp. 1790-1792 ◽

Cited By ~ 13

Author(s):

Bikas Maiti ◽

Ming Yin Hao ◽

Insup Lee ◽

Jack C. Lee

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Low Pressure ◽

Chemical Vapor Deposition Process ◽

Pressure Chemical ◽

Thermal Nitridation ◽

Vapor Deposition Process

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A Kinetic Analysis of the Growth and Doping Kinetics of the SiC Chemical Vapor Deposition Process

Industrial & Engineering Chemistry Research ◽

10.1021/ie403907w ◽

2014 ◽

Vol 53 (22) ◽

pp. 9076-9087 ◽

Cited By ~ 8

Author(s):

Carlo Cavallotti ◽

Filippo Rossi ◽

Stefano Ravasio ◽

Maurizio Masi

Keyword(s):

Chemical Vapor Deposition ◽

Kinetic Analysis ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Chemical Vapor Deposition Process ◽

Kinetics Of ◽

Vapor Deposition Process

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