A Kinetic Phase Diagram for Ultrathin Film Ni/Si(111): Auger Lineshape Results

1989 ◽  
Vol 148 ◽  
Author(s):  
P. A. Bennett ◽  
J. R. Butler ◽  
X. Tong
Keyword(s):  
Phase Diagram ◽  
Reaction Rate ◽  
Single Phase ◽  
Solid Phase ◽  
Bulk Diffusion ◽  
Auger Spectroscopy ◽  
Ultrathin Film ◽  
Solid Phase Epitaxy ◽  
Free Energies ◽  
Diffusion Limited

ABSTRACTWe have used Auger spectroscopy to monitor chemical reactions during solid phase epitaxy by contact reaction in the Ni/Si(ll1) ultrathin film system. We show that coexisting phases may be separated by numerically fitting the composite Si LVV lineshape using a linear combination of single phase “fingerprint” spectra. Sytematic measurements of coverage and temperature conditions are compiled into a kinetic phase diagram. Comparison with conventional (1000Å) thin film data suggest that the reactions forming Ni2Si and NiSi at > 20 Å thickness are bulk diffusion limited, while surface diffusion dominates at lower coverage. On the other hand, the formation of NiSi2 appears to be nucleation limited at all coverages, with dramatic variations in reaction rate with film thickness. This is discussed in terms of a competition between surface and bulk free energies.

Variety of iron silicides grown on Si(001) surfaces by solid phase epitaxy: Schematic phase diagram

2007 ◽  
Vol 601 (22) ◽  
pp. 5088-5092 ◽  
Author(s):  
H. Nakano ◽  
K. Maetani ◽  
K. Hattori ◽  
H. Daimon
Keyword(s):  
Phase Diagram ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Iron Silicides ◽  
Schematic Phase Diagram

Assessment of GaAs heteroepitaxial films grown on silicon‐on‐sapphire upgraded by double solid phase epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1756-1758 ◽  
Author(s):  
J. B. Posthill ◽  
R. J. Markunas ◽  
T. P. Humphreys ◽  
R. J. Nemanich ◽  
K. Das ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy

Kinetics of arsenic-enhanced solid phase epitaxy in silicon

2004 ◽  
Vol 95 (8) ◽  
pp. 4427-4431 ◽  
Author(s):  
B. C. Johnson ◽  
J. C. McCallum
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetics Of

CrSi2/Si(111): Growth of monotype domains by solid phase epitaxy on a vicinal surface

1994 ◽  
Vol 12 (6) ◽  
pp. 3018-3022 ◽  
Author(s):  
André Rocher ◽  
André Oustry ◽  
Marie Josée David ◽  
Michel Caumont
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Vicinal Surface

Solid Phase Synthesis and Sintering Properties of Yttrium Iron Garnet

2008 ◽  
Vol 368-372 ◽  
pp. 588-590 ◽  
Author(s):  
Ming Hao Fang ◽  
Jun Tong Huang ◽  
Zhao Hui Huang ◽  
Yan Gai Liu ◽  
Bin Jiang ◽  
...  
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Single Phase ◽  
Solid Phase Synthesis ◽  
Solid Phase ◽  
Volume Density ◽  
Phase Synthesis ◽  
Fe2o3 Content ◽  
Sintering Properties ◽  
Iron Garnet

Single phase YIG powders were synthesized successfully using Fe2O3 and Y2O3 as starting materials by solid state reaction, and YIG ceramics were prepared by pressureless sintering. The influence of synthesizing temperature and Fe2O3 content on the final production were studied The effect of Fe2O3 content on volume density and microstructure of the sintered YIG was also investigated. The results showed that single phase YIG powders were synthesized by solid state reaction at 1400°C for 3h. When Fe2O3 content was excessive 3 wt%, YIG ceramics with a density of 5.294g·cm-3 was fabricated by sintering at 1480°C for 2.5h.

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

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