Iron silicides grown by solid phase epitaxy on aSi(111)surface: Schematic phase diagram

2006 ◽  
Vol 74 (15) ◽  
Author(s):  
K. Kataoka ◽  
K. Hattori ◽  
Y. Miyatake ◽  
H. Daimon
Keyword(s):  
Phase Diagram ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Iron Silicides ◽  
Schematic Phase Diagram

Variety of iron silicides grown on Si(001) surfaces by solid phase epitaxy: Schematic phase diagram

2007 ◽  
Vol 601 (22) ◽  
pp. 5088-5092 ◽  
Author(s):  
H. Nakano ◽  
K. Maetani ◽  
K. Hattori ◽  
H. Daimon
Keyword(s):  
Phase Diagram ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Iron Silicides ◽  
Schematic Phase Diagram

Growth kinetics of iron silicides fabricated by solid phase epitaxy or ion beam synthesis

1992 ◽  
Vol 215 (1) ◽  
pp. 76-83 ◽  
Author(s):  
K. Radermacher ◽  
S. Mantl ◽  
Ch. Dieker ◽  
H. Lüth ◽  
C. Freiburg
Keyword(s):  
Growth Kinetics ◽  
Solid Phase ◽  
Ion Beam ◽  
Solid Phase Epitaxy ◽  
Iron Silicides ◽  
Ion Beam Synthesis ◽  
Kinetics Of

Formation of interfacial iron silicides on the oxidized silicon surface during solid-phase epitaxy

2007 ◽  
Vol 52 (12) ◽  
pp. 1586-1591 ◽  
Author(s):  
A. S. Voronchikhin ◽  
M. V. Gomoyunova ◽  
D. E. Malygin ◽  
I. I. Pronin
Keyword(s):  
Silicon Surface ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Iron Silicides

A Kinetic Phase Diagram for Ultrathin Film Ni/Si(111): Auger Lineshape Results

1989 ◽  
Vol 148 ◽  
Author(s):  
P. A. Bennett ◽  
J. R. Butler ◽  
X. Tong
Keyword(s):  
Phase Diagram ◽  
Reaction Rate ◽  
Single Phase ◽  
Solid Phase ◽  
Bulk Diffusion ◽  
Auger Spectroscopy ◽  
Ultrathin Film ◽  
Solid Phase Epitaxy ◽  
Free Energies ◽  
Diffusion Limited

ABSTRACTWe have used Auger spectroscopy to monitor chemical reactions during solid phase epitaxy by contact reaction in the Ni/Si(ll1) ultrathin film system. We show that coexisting phases may be separated by numerically fitting the composite Si LVV lineshape using a linear combination of single phase “fingerprint” spectra. Sytematic measurements of coverage and temperature conditions are compiled into a kinetic phase diagram. Comparison with conventional (1000Å) thin film data suggest that the reactions forming Ni2Si and NiSi at > 20 Å thickness are bulk diffusion limited, while surface diffusion dominates at lower coverage. On the other hand, the formation of NiSi2 appears to be nucleation limited at all coverages, with dramatic variations in reaction rate with film thickness. This is discussed in terms of a competition between surface and bulk free energies.

Assessment of GaAs heteroepitaxial films grown on silicon‐on‐sapphire upgraded by double solid phase epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1756-1758 ◽  
Author(s):  
J. B. Posthill ◽  
R. J. Markunas ◽  
T. P. Humphreys ◽  
R. J. Nemanich ◽  
K. Das ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy

Kinetics of arsenic-enhanced solid phase epitaxy in silicon

2004 ◽  
Vol 95 (8) ◽  
pp. 4427-4431 ◽  
Author(s):  
B. C. Johnson ◽  
J. C. McCallum
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetics Of

CrSi2/Si(111): Growth of monotype domains by solid phase epitaxy on a vicinal surface

1994 ◽  
Vol 12 (6) ◽  
pp. 3018-3022 ◽  
Author(s):  
André Rocher ◽  
André Oustry ◽  
Marie Josée David ◽  
Michel Caumont
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Vicinal Surface

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

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