A Novel Method for Study of Roughness at Buried Interfaces by Plan View Tem: Si/SiO2

1989 ◽  
Vol 148 ◽  
Author(s):  
J. M. Gibson ◽  
M. Y. Lanzerotti
Keyword(s):  
Electron Diffraction ◽  
Electron Mobility ◽  
Interfacial Roughness ◽  
Plan View ◽  
Oxide Interfaces ◽  
Buried Interfaces ◽  
Transmission Electron ◽  
Thermal Oxide ◽  
Step Density ◽  
Novel Method

ABSTRACTInterfacial roughness can be measured at buried interfaces using plan view transmission electron diffraction. The method relies on surface termination Bragg reflections and is applied to the Si/SiO2 system. In contrast to other methods, this does not require stripping of the SiO2 overlayer or projection assumptions. We find that thermal oxide interfaces are significantly flatter than previously supposed.The Si/SiO2 interface has been extensively examined by a wide variety of techniques. A subset of these studies have focussed on the interfacial roughness and it has been shown that increased step density reduces electron mobility.[1, 2 ] Although supporting the correlation of mobility with step density, the data presented here shows thermally oxidized Si/SiO2 interfaces to be significantly flatter than previously assumed.

Plan-View CBED Studies of Nio-Zro2(CaO) Interfaces

1989 ◽  
Vol 159 ◽  
Author(s):  
V.P. Dravid ◽  
M.R. Notis ◽  
C.E. Lyman ◽  
A. Revcolevschi
Keyword(s):  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Low Energy ◽  
Directionally Solidified ◽  
Plan View ◽  
Beam Electron ◽  
Transmission Electron ◽  
Interfacial Defects ◽  
Convergent Beam ◽  
Lamellar Interfaces

ABSTRACTLow energy lamellar interfaces in the directionally solidified eutectic (DSE) NiO-ZrO2(CaO) have been investigated using transmission electron diffraction and imaging. The symmetry of this bicrystal and an aspect of interfacial relaxations in the form of symmetry lowering in-plane rigid body translation (RBT) have been explored by performing convergent beam electron diffraction (CBED) experiments of plan-view bicrystals. Edge-on interfaces have also been studied by conventional and high resolution transmission electron microscopy (CTEM and HRTEM respectively), and electron diffraction fine structure analysis. Despite certain experimental difficulties due to interfacial defects and strain, plan-view CBED patterns offered valuable information concerning bicrystal symmetry and indicated no symmetry lowering RBT in this bicrystal. The suitability of plan-view CBED is briefly discussed in view of its potential as a technique to determine bicrystal symmetry and RBT.

Epitaxial Growth and Stability of C49 TiSi2 ON Si(111).

1990 ◽  
Vol 198 ◽  
Author(s):  
Hyeongtag Jeon ◽  
J. W. Honeycutt ◽  
C. A. Sukow ◽  
T. P. Humphreys ◽  
R. J. Nemanich ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Metastable Phase ◽  
Plan View ◽  
Transmission Electron ◽  
Temperature Deposition ◽  
The Individual ◽  
Relationship Of

ABSTRACTEpitaxial TiSi2 films have been grown by molecular beam epitaxy (MBE) on atomically clean Si(111)-orientated substrates. The growth procedure involves the ambient temperature deposition of Ti films of 50Å thickness and annealing to 800°C. In situ low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) techniques have been used to monitor the TiSi2 formation process. The epitaxial films have been identified as the C49 metastable phase by both Raman spectroscopy and electron diffraction. Plan view transmission electron microscopy shows three different connected island morphologies. The individual island structures are single crystal and are grown epitaxially with different crystallographic orientations. The orientational relationship of the largest islands is given by [3 1 1] C49 TiSi2//[112]Si and (130) C49 TiSi2//(l1 1)Si. High resolution transmission electron microscopy (HRTEM) cross-section shows a coherent interface extending over several hundred angstroms.

The Mechanism of Epitaxial Si-Ge/Si Heterostructure Formation by Wet Oxidation of Amorphous Si-Ge Thin Films

1989 ◽  
Vol 160 ◽  
Author(s):  
S.M. Prokes ◽  
A.K. Rai ◽  
W.E. Carlos
Keyword(s):  
Electron Diffraction ◽  
Solid Phase ◽  
Native Oxide ◽  
Wet Oxidation ◽  
Cross Sectional ◽  
Plan View ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Spin Resonance ◽  
Amorphous Si

AbstractEpitaxial SiGe/Si heterostructures have been formed by wet oxidation from amorphous SiGe films deposited on Si(100). Amorphous SixGe1-x films were deposited at a vacuum of 10-7 Torr. The presence of an initial native oxide precluded solid phase epitaxy under standard annealing conditions, but epitaxy could be achieved by the use of wet oxidation. The samples were oxidized at 900°C for various times and examined in reflection electron diffraction, ellipsometry, cross-sectional and plan-view transmission electron diffraction, and electron spin resonance. The formation of the epitaxial layer and oxide has been examined, and an epitaxial growth model is suggested.

A Novel Method for the Specified Site Planar View TEM Sample Preparation

2014 ◽  
Author(s):  
Shuqing Duan ◽  
Yanli Zhao ◽  
Ming Li
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
The Novel ◽  
Plan View ◽  
Site Specific ◽  
Transmission Electron ◽  
Novel Method ◽  
Failure Location ◽  
Rate Of Failure ◽  
Technology Nodes

Abstract This paper reports a novel method for site specific plan view transmission electron microscopy (TEM) sample preparation. The detailed procedure is introduced step by step. To demonstrate the practicality of this technique in failure analysis, case studies on 45nm and below technology nodes using the novel method are reported. The results showed that the method is very useful for the analysis of the specified failure location and is helpful to improve the success rate of failure analysis.

Silicon Surface Morphology and the Reaction of Silicon with Oxygen

1992 ◽  
Vol 259 ◽  
Author(s):  
Frances M. Ross ◽  
J. Murray Gibson
Keyword(s):  
Silicon Surface ◽  
Silicon Oxide ◽  
Silicon Surfaces ◽  
Interface Morphology ◽  
Oxidation Reactions ◽  
Oxide Interface ◽  
Plan View ◽  
Buried Interfaces ◽  
Transmission Electron ◽  
Microscopy Techniques

ABSTRACTWe discuss the measurement of the morphology of exposed surfaces and buried interfaces using plan view transmission electron microscopy techniques. We have observed the evolution of the silicon/oxide interface during both oxidation and oxygen etching of the Si (111) surface. We describe the interface morphology, the mechanisms of these oxidation reactions and the implications of these results for the processing of silicon surfaces.

Chemical sensitivity of convergent beam electron diffraction on the stoichiometry of GaN

1995 ◽  
Vol 53 ◽  
pp. 148-149
Author(s):  
Zuzanna Liliental-Weber ◽  
Christian Kisielowski ◽  
Jack Washburn
Keyword(s):  
Electron Diffraction ◽  
Film Growth ◽  
Lattice Mismatch ◽  
Uv Light ◽  
Convergent Beam Electron Diffraction ◽  
Structural Defects ◽  
Plan View ◽  
Beam Electron ◽  
Transmission Electron ◽  
Convergent Beam

III-V nitride thin film growth has attracted considerable attention because it now seems feasible to engineer semiconductor band gaps between 2.1 and 6.2 eV. One of the challenges coming with this development is related to the fact that structural perfection seems not to correlate directly with optical properties such as the emission of blue-green or UV light in GaN. In order to better understand this material High Resolution Transmission Electron Microscopy (HREM) and Convergent Beam Electron Diffraction (CBED) experiments were used to study structural defects in GaN thin films. Experiments were performed with a Topcon 002B and ARM operating at 200 and 800 KeV, respectively, and were guided by image simulations. Results of parallel luminescence studies will be published elsewhere.Plan-view micrographs of GaN grown on the (0001) basal plane of A12O3 with a lattice mismatch of 14% show small angle grain boundaries which divide the layer into large subgrains of about 800 nm diameter. Other defects visible in the plan-view micrographs are threading dislocations and planar defects lying parallel to the {1010} planes of the GaN.

Preparation of TEM Specimens from Gas-Atomized Fe-6.5wt.%Si Powders with Several Micrometers Using Focused Ion Beam

2013 ◽  
Vol 706-708 ◽  
pp. 224-229
Author(s):  
Shi Chao Zhao ◽  
Ke Xie ◽  
Chang Jiang Song ◽  
Qi Jie Zhai
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Powder Particles ◽  
Novel Method

Transmission electron microscopy (TEM) can be utilized to identify some specific microstructures of metals and alloys. However, it is very difficult to precisely prepare a TEM specimen from the powder particles with several micrometers. There are more or less drawbacks in conventional preparation method. This paper describes a novel method to prepare specific specimens from the powder particles with several micrometers for TEM study. A TEM specimen approximately 5μm diameter was successfully prepared to electron transparency, which extracted from a 5μm diameter powder particle. The selected-area electron diffraction pattern (SAED) analysis was carried out.

Transmission Electron Diffraction Analysis by Computer

1970 ◽  
Vol 28 ◽  
pp. 40-41
Author(s):  
R.A. Ploc ◽  
G.H. Keech
Keyword(s):  
Electron Diffraction ◽  
Input Data ◽  
Reciprocal Lattice ◽  
Computer Programme ◽  
Transmission Electron Diffraction ◽  
Usual Procedure ◽  
Transmission Electron ◽  
Complex Shapes ◽  
Computer Input ◽  
Diffraction Effects

An unambiguous analysis of transmission electron diffraction effects requires two samplings of the reciprocal lattice (RL). However, extracting definitive information from the patterns is difficult even for a general orthorhombic case. The usual procedure has been to deduce the approximate variables controlling the formation of the patterns from qualitative observations. Our present purpose is to illustrate two applications of a computer programme written for the analysis of transmission, selected area diffraction (SAD) patterns; the studies of RL spot shapes and epitaxy.When a specimen contains fine structure the RL spots become complex shapes with extensions in one or more directions. If the number and directions of these extensions can be estimated from an SAD pattern the exact spot shape can be determined by a series of refinements of the computer input data.

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