The Mechanism of Epitaxial Si-Ge/Si Heterostructure Formation by Wet Oxidation of Amorphous Si-Ge Thin Films

1989 ◽  
Vol 160 ◽  
Author(s):  
S.M. Prokes ◽  
A.K. Rai ◽  
W.E. Carlos
Keyword(s):  
Electron Diffraction ◽  
Solid Phase ◽  
Native Oxide ◽  
Wet Oxidation ◽  
Cross Sectional ◽  
Plan View ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Spin Resonance ◽  
Amorphous Si

AbstractEpitaxial SiGe/Si heterostructures have been formed by wet oxidation from amorphous SiGe films deposited on Si(100). Amorphous SixGe1-x films were deposited at a vacuum of 10-7 Torr. The presence of an initial native oxide precluded solid phase epitaxy under standard annealing conditions, but epitaxy could be achieved by the use of wet oxidation. The samples were oxidized at 900°C for various times and examined in reflection electron diffraction, ellipsometry, cross-sectional and plan-view transmission electron diffraction, and electron spin resonance. The formation of the epitaxial layer and oxide has been examined, and an epitaxial growth model is suggested.

Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

2001 ◽  
Vol 16 (11) ◽  
pp. 3229-3237 ◽  
Author(s):  
A. C. Y. Liu ◽  
J. C. McCallum ◽  
J. Wong-Leung
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Elevated Temperatures ◽  
Defect Formation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Plan View ◽  
Atomic Force ◽  
Transmission Electron

Solid-phase epitaxy was examined in deep amorphous volumes formed in silicon wafers by multi-energy self-implantation through a mask. Crystallization was effected at elevated temperatures with the amorphous volume being transformed at both lateral and vertical interfaces. Sample topology was mapped using an atomic force microscope. Details of the process were clarified with both plan-view and cross-sectional transmission electron microscopy analyses. Crystallization of the amorphous volumes resulted in the incorporation of a surprisingly large number of dislocations. These arose from a variety of sources. Some of the secondary structures were identified to occur uniquely from the crystallization of volumes in this particular geometry.

A New Method of Wafer Level Plan View TEM Sample Preparation by DualBeam

2008 ◽  
Author(s):  
Hyoung H. Kang ◽  
Michael A. Gribelyuk ◽  
Oliver D. Patterson ◽  
Steven B. Herschbein ◽  
Corey Senowitz
Keyword(s):  
Sample Preparation ◽  
Ex Situ ◽  
Wafer Level ◽  
Cross Sectional ◽  
Plan View ◽  
Manufacturing Line ◽  
Transmission Electron ◽  
Thin Lamella ◽  
Preparation Techniques

Abstract Cross-sectional style transmission electron microscopy (TEM) sample preparation techniques by DualBeam (SEM/FIB) systems are widely used in both laboratory and manufacturing lines with either in-situ or ex-situ lift out methods. By contrast, however, the plan view TEM sample has only been prepared in the laboratory environment, and only after breaking the wafer. This paper introduces a novel methodology for in-line, plan view TEM sample preparation at the 300mm wafer level that does not require breaking the wafer. It also presents the benefit of the technique on electrically short defects. The methodology of thin lamella TEM sample preparation for plan view work in two different tool configurations is also presented. The detailed procedure of thin lamella sample preparation is also described. In-line, full wafer plan view (S)TEM provides a quick turn around solution for defect analysis in the manufacturing line.

Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan ◽  
G. L. Olson ◽  
O. W. Holland
Keyword(s):  
Laser Power ◽  
Solid Phase ◽  
Solute Segregation ◽  
Dislocation Loops ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Plan View ◽  
Ion Channeling ◽  
Retrograde Solubility ◽  
Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Cross-Sectional TEM Studies of Indentation-Induced Phase Transformations in Si: Indenter Angle Effects

2004 ◽  
Vol 843 ◽  
Author(s):  
Songqing Wen ◽  
James Bentley ◽  
Jae-il Jang ◽  
G. M. Pharr
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Indentation Load ◽  
High Load ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Cube Corner ◽  
Displacement Behavior ◽  
Si Wafer

ABSTRACTNanoindentations were made on a (100) single crystal Si wafer at room temperature with a series of triangular pyramidal indenters having centerline-to-face angles ranging from 35° to 85°. Indentations produced at high (80 mN) and low (10 mN) loads were examined in plan-view by scanning electron microscopy and in cross-section by transmission electron microscopy. Microstructural observations were correlated with the indentation load-displacement behavior. Cracking and extrusion are more prevalent for sharp indenters with small centerline-to-face angles, regardless of the load. At low loads, the transformed material is amorphous silicon for all indenter angles. For Berkovich indentations made at high-load, the transformed material is a nanocrystalline mix of Si-I and Si-III/Si-XII, as confirmed by selected area diffraction. Extrusion of material at high loads for the cube-corner indenter reduces the volume of transformed material remaining underneath the indenter, thereby eliminating the pop-out in the unloading curve.

Characterization of pulsed laser deposited MoS2 by transmission electron microscopy

1993 ◽  
Vol 8 (11) ◽  
pp. 2933-2941 ◽  
Author(s):  
S.D. Walek ◽  
M.S. Donley ◽  
J.S. Zabinski ◽  
V.J. Dyhouse
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Solid Phase ◽  
Analytical Electron Microscopy ◽  
Pulsed Laser ◽  
Cross Sectional ◽  
Aerospace Applications ◽  
Transmission Electron ◽  
Novel Method

Molybdenum disulfide is a technologically important solid phase lubricant for vacuum and aerospace applications. Pulsed laser deposition of MoS2 is a novel method for producing fully dense, stoichiometric thin films and is a promising technique for controlling the crystallographic orientation of the films. Transmission electron microscopy (TEM) of self-supporting thin films and cross-sectional TEM samples was used to study the crystallography and microstructure of pulsed laser deposited films of MoS2. Films deposited at room temperature were found to be amorphous. Films deposited at 300 °C were nanocrystalline and had the basal planes oriented predominately parallel to the substrate within the first 12–15 nm of the substrate with an abrupt upturn into a perpendicular (edge) orientation farther from the substrate. Spherically shaped particles incorporated in the films from the PLD process were found to be single crystalline, randomly oriented, and less than about 0.1 μm in diameter. A few of these particles, observed in cross section, had flattened bottoms, indicating that they were molten when they arrived at the surface of the growing film. Analytical electron microscopy (AEM) was used to study the chemistry of the films. The x-ray microanalysis results showed that the films have the stoichiometry of cleaved single crystal MoS2 standards.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

Characterization of Structure and Mechanical Properties of MoSi2-SiC Nanolayer Composites

1993 ◽  
Vol 322 ◽  
Author(s):  
H. Kung ◽  
T. R. Jervis ◽  
J-P. Hirvonen ◽  
M. Nastasi ◽  
T. E. Mitchell
Keyword(s):  
Mechanical Properties ◽  
Structural Changes ◽  
Crystallization Process ◽  
Mechanical Response ◽  
Cross Sectional ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Layer Structures ◽  
Amorphous Structures

AbstractA systematic study of the structure-mechanical properties relationship is reported for MoSi2-SiC nanolayer composites. Alternating layers of MoSi2 and SiC were synthesized by DCmagnetron and if-diode sputtering, respectively. Cross-sectional transmission electron microscopy was used to examine three distinct reactions in the specimens when exposed to different annealing conditions: crystallization and phase transformation of MoSi2, crystallization of SiC, and spheroidization of the layer structures. Nanoindentation was employed to characterize the mechanical response as a function of the structural changes. As-sputtered material exhibits amorphous structures in both types of layers and has a hardness of 11GPa and a modulus of 217GPa. Subsequent heat treatment induces crystallization of MoSi2 to form the C40 structure at 500°C and SiC to form the a structure at 700°C. The crystallization process is directly responsible for the hardness and modulus increase in the multilayers. A hardness of 24GPa and a modulus of 340GPa can be achieved through crystallizing both MoSi2 and SiC layers. Annealing at 900°C for 2h causes the transformation of MoSi2 into the Cllb structure, as well as spheroidization of the layering to form a nanocrystalline equiaxed microstructure. A slight degradation in hardness but not in modulus is observed accompanying the layer break-down.

Orientational and Microstructural Evolution During Epitaxial Growth of Cu on Si(001) by Sputter Deposition

1992 ◽  
Vol 280 ◽  
Author(s):  
I. Hashim ◽  
B. Park ◽  
H. A. Atwater
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
High Energy ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTEpitaxial Cu thin films have been grown on H-terminated Si(OOl) substrates at room temperature by D.C. ion-beam sputter deposition in ultrahigh vacuum. The development of orientation and microstructure during epitaxial growth from the initial stages of Cu growth up to Cu thicknesses of few hundred nm has been investigated. Analysis by in-situ reflection high energy electron diffraction, thin film x-ray diffraction, and plan-view and cross-sectional transmission electron microscopy indicates that the films are well textured with Cu(001)∥ Si(001) and Cu[100]∥ Si[110]. Interestingly, it is found that a distribution of orientations occurs at the early stages of Cu epitaxy on Si(001) surface, and that a (001) texture emerges gradually with increasing Cu thickness. The effect of silicide formation and deposition conditions on the crystalline quality of Cu epitaxy is also discussed.

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