Electron-Beam-Induced-Current (EBIC) Imaging of Defects in Si1−xGeX Multilayer Structures

1989 ◽  
Vol 148 ◽  
Author(s):  
J.C. Sturm ◽  
X. Xiao ◽  
P.M. Garone ◽  
P.V. Schwartz
Keyword(s):  
Electron Beam ◽  
Misfit Dislocations ◽  
Induced Current ◽  
High Quality ◽  
Strained Si ◽  
Density Of Dislocations ◽  
Interface Defects ◽  
Line Defects ◽  
Electron Beam Induced Current ◽  
Reaction Processing

ABSTRACTThe electron-beam-induced-current (EBIC) technique has been used to image dislocations and other defects at strained Si: Sil−xGex epitaxial interfaces and in overlying epitaxial layers grown by Limited Reaction Processing. Depending upon the bias conditions and test structure, one can distinguish between interface defects and those in overlying films. We have found that for a low density of misfit dislocations, a high quality (defect-free) overlying epitaxial layer can be grown, but for a high density of dislocations certain line defects propagate upwards in the overlying layers.

scholarly journals Electron Beam Induced Current Characterization of Dark Line Defects in Failed and Degraded High Power Quantum Well Laser Diodes

2010 ◽  
Vol 16 (S2) ◽  
pp. 794-795
Author(s):  
M Mason ◽  
N Presser ◽  
Y Sin ◽  
B Foran ◽  
SC Moss
Keyword(s):  
Electron Beam ◽  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Induced Current ◽  
Dark Line ◽  
Quantum Well Laser ◽  
Line Defects ◽  
Electron Beam Induced Current

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Electron-Beam-Induced Current Observation of Misfit Dislocations at Si1-XGeX/Si Interfaces

1987 ◽  
Vol 26 (Part 2, No. 12) ◽  
pp. L1944-L1946 ◽  
Author(s):  
Yoshitaka Kohama ◽  
Yoshio Watanabe ◽  
Yukio Fukuda
Keyword(s):  
Electron Beam ◽  
Misfit Dislocations ◽  
Induced Current ◽  
Current Observation ◽  
Electron Beam Induced Current

Modification of Recombination Activity of Dislocations in Si and SiGe by Contamination and Hydrogenation

1995 ◽  
Vol 378 ◽  
Author(s):  
M. Kittler ◽  
W. Seifert ◽  
V. Higgs
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Electrical Activity ◽  
Misfit Dislocations ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Dislocation Activity ◽  
Cu Contamination ◽  
Electron Beam Induced Current

AbstractTemperature-dependent (80 … 300 K) measurements of dislocation recombination activity by the electron-beam-induced-current (EBIC) technique are reported. Controlled Cu contamination (ppb to ppm range), chemomechanical polishing and hydrogenation treatments were applied to alter dislocation properties. Increasing Cu level is found not only to increase the electrical activity of misfit dislocations in SiGe/Si structures at 300 K, but also to change its dependence on temperature. At low contamination, shallow centres control dislocation activity while deep centres are characteristic at higher Cu levels. Heavy Cu contamination results in very strong recombination activity which is attributed to precipitates. Chemomechanical polishing has an effect which is analogous to medium Cu contamination. Hydrogenation was found to passivate recombination activity at 300 K, but did not show pronounced effects on activity at low temperature.

Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing

2012 ◽  
Vol 725 ◽  
pp. 23-26
Author(s):  
Yong Zhao Yao ◽  
Koji Sato ◽  
Yoshihiro Sugawara ◽  
Yukari Ishikawa ◽  
Yoshihiro Okamoto ◽  
...  
Keyword(s):  
Electron Beam ◽  
Slip Plane ◽  
Mechanical Polishing ◽  
Induced Current ◽  
Abrasive Particles ◽  
Density Of Dislocations ◽  
Current Observation ◽  
Moving Direction ◽  
Electron Beam Induced Current ◽  
Step Down

Electron beam induced current (EBIC) observations have been carried out to investigate the influence of mechanical polishing (MP) direction on the dislocations formation at the Si-face c(0001) of 4H-SiC epitaxial layers. Two opposite MP directions (defined by polish pad moving direction) have been compared, which are [11-20] off-cut directions along step-up and step-down, respectively. It has been found that high density of dislocations have been formed along the polish paths for the 8o off samples with polishing pad moved in step-up direction. By contrast, step-down polishing samples have shown no significant dislocation increase although shallow polish scratches were observed. Similar experiments have also been carried out for 4o off samples, showing step-up MPs introduced more dislocations than step-down ones. The results are discussed in terms of forces along the slip plane [11-20](0001) effectively exerted by the abrasive particles on the steps.

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