Electrical Properties of Thin Intermetallic Platinum-Gallium Films Grown by MBE on Gallium Arsenide and Silicon.

1989 ◽  
Vol 148 ◽  
Author(s):  
L. P. Sadwick ◽  
R. M. Ostrom ◽  
B. J. Wu ◽  
K. L. Wang ◽  
R. S. Williams
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
High Temperature ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Crystal Quality ◽  
Partial List

ABSTRACTThin films of the platinum-gallium (Pt-Ga) family have been grown on gallium arsenide (GaAs) and silicon (Si) by molecular beam epitaxy (MBE). A partial list of potential uses for these and similar structures is high temperature stable photodetectors, Schottky andOhmic contacts, epitaxial buried contacts, and field effect transistors. In this work the electrical properties of Pt2Ga, PtGa, and PtGa2 on both GaAs andSi will be presented. The resistivity of these thin films has been found to depend on the crystal quality and phase of the material.

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy

1989 ◽  
Vol 54 (12) ◽  
pp. 1136-1138 ◽  
Author(s):  
J. B. Kuang ◽  
P. J. Tasker ◽  
Y. K. Chen ◽  
G. W. Wang ◽  
L. F. Eastman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors

Investigation of the growth of gallium arsenide thin films by metalorganic molecular beam epitaxy using gallane‐quinuclidine adduct

1993 ◽  
Vol 63 (9) ◽  
pp. 1270-1272 ◽  
Author(s):  
J. S. Foord ◽  
T. J. Whitaker ◽  
E. N. Downing ◽  
D. O’Hare ◽  
A. C. Jones
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

2017 ◽  
Vol 10 (7) ◽  
pp. 071101 ◽  
Author(s):  
Elaheh Ahmadi ◽  
Onur S. Koksaldi ◽  
Xun Zheng ◽  
Tom Mates ◽  
Yuichi Oshima ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors

Fabrication of metal‐epitaxial insulator‐semiconductor field‐effect transistors using molecular beam epitaxy of CaF2on Si

1984 ◽  
Vol 45 (8) ◽  
pp. 907-909 ◽  
Author(s):  
T. P. Smith ◽  
Julia M. Phillips ◽  
W. M. Augustyniak ◽  
P. J. Stiles
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors

Study of Thermodynamic Phase Stability of Intermetallic Thin Films of Pt2Ga, Ptga and PtGa2 on Gallium Arsenide

1989 ◽  
Vol 148 ◽  
Author(s):  
Young K. Kim ◽  
David K. Shuh ◽  
R. Stanley Williams ◽  
Larry P. Sadwick ◽  
Kang L. Wang
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Intermetallic Compounds ◽  
Phase Stability ◽  
Molecular Beam ◽  
Epitaxial Thin Films ◽  
X Ray ◽  
Thermodynamic Phase

ABSTRACTEpitaxial thin films of three different Pt-Ga intermetallic compounds have been grown on GaAs by molecular beam epitaxy (MBE). The resultant films have been annealed at various temperatures and then examined using X-ray two-theta diffraction. Both PtGa2 and PtGa thin films are chemically stable on GaAs under 1 atmosphere of N2 up to 450°C and 600°C, respectively. Thin films of Pt2Ga react with GaAs at temperatures as low as 200°C to form phases with higher Ga concentration.

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