Study of Thermodynamic Phase Stability of Intermetallic Thin Films of Pt2Ga, Ptga and PtGa2 on Gallium Arsenide

1989 ◽  
Vol 148 ◽  
Author(s):  
Young K. Kim ◽  
David K. Shuh ◽  
R. Stanley Williams ◽  
Larry P. Sadwick ◽  
Kang L. Wang
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Intermetallic Compounds ◽  
Phase Stability ◽  
Molecular Beam ◽  
Epitaxial Thin Films ◽  
X Ray ◽  
Thermodynamic Phase

ABSTRACTEpitaxial thin films of three different Pt-Ga intermetallic compounds have been grown on GaAs by molecular beam epitaxy (MBE). The resultant films have been annealed at various temperatures and then examined using X-ray two-theta diffraction. Both PtGa2 and PtGa thin films are chemically stable on GaAs under 1 atmosphere of N2 up to 450°C and 600°C, respectively. Thin films of Pt2Ga react with GaAs at temperatures as low as 200°C to form phases with higher Ga concentration.

Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy

1999 ◽  
Vol 567 ◽  
Author(s):  
Z. Yu ◽  
R. Droopad ◽  
J. Ramdani ◽  
J.A. Curless ◽  
C.D. Overgaard ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
State Density ◽  
Unit Cell ◽  
Ex Situ ◽  
Silicon Oxide Layer ◽  
Single Crystalline ◽  
X Ray

ABSTRACTSingle crystalline perovskite oxides such as SrTiO3 (STO) are highly desirable for future generation ULSI applications. Over the past three decades, development of crystalline oxides on silicon has been a great technological challenge as an amorphous silicon oxide layer forms readily on the Si surface when exposed to oxygen preventing the intended oxide heteroepitaxy on Si substrate. Recently, we have successfully grown epitaxial STO thin films on Si(001) surface by using molecular beam epitaxy (MBE) method. Properties of the STO films on Si have been characterized using a variety of techniques including in-situ reflection high energy electron diffraction (RHEED), ex-situ X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). The STO films grown on Si(001) substrate show bright and streaky RHEED patterns indicating coherent two-dimensional epitaxial oxide film growth with its unit cell rotated 450 with respect to the underlying Si unit cell. RHEED and XRD data confirm the single crystalline nature and (001) orientation of the STO films. An X-ray pole figure indicates the in-plane orientation relationship as STO[100]//Si[110] and STO(001)// Si(001). The STO surface is atomically smooth with AFM rms roughness of 1.2 AÅ. The leakage current density is measured to be in the low 10−9 A/cm2 range at 1 V, after a brief post-growth anneal in O2. An interface state density Dit = 4.6 × 1011 eV−1 cm−2 is inferred from the high-frequency and quasi-static C-V characteristics. The effective oxide thickness for a 200 Å STO film is around 30 Å and is not sensitive to post-growth anneal in O2 at 500-700°C. These STO films are also robust against forming gas anneal. Finally, STO MOSFET structures have been fabricated and tested. An extrinsic carrier mobility value of 66 cm2 V−11 s−1 is obtained for an STO PMOS device with a 2 μm effective gate length.

Highly conductive Nb doped SrTiO3 epitaxial thin films grown by laser molecular beam epitaxy

2000 ◽  
Vol 212 (3-4) ◽  
pp. 451-455 ◽  
Author(s):  
Tong Zhao ◽  
Huibin Lu ◽  
Fan Chen ◽  
Shouyu Dai ◽  
Guozhen Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Thin Films ◽  
Laser Molecular Beam Epitaxy

Photoluminescence characterization of Zn1−xMgxO epitaxial thin films grown on ZnO by radical source molecular beam epitaxy

2007 ◽  
Vol 90 (12) ◽  
pp. 124104 ◽  
Author(s):  
H. Shibata ◽  
H. Tampo ◽  
K. Matsubara ◽  
A. Yamada ◽  
K. Sakurai ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Thin Films

scholarly journals Origin of Ultraviolet Luminescence from Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy

2011 ◽  
Vol 1 ◽  
pp. 135-139 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan ◽  
I. Hussain ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Luminescence

Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zni-X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.

Investigation of the growth of gallium arsenide thin films by metalorganic molecular beam epitaxy using gallane‐quinuclidine adduct

1993 ◽  
Vol 63 (9) ◽  
pp. 1270-1272 ◽  
Author(s):  
J. S. Foord ◽  
T. J. Whitaker ◽  
E. N. Downing ◽  
D. O’Hare ◽  
A. C. Jones
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Structural and Optical Properties of Zn1-XCoXO Thin Films Fabricated by Laser Molecular Beam Epitaxy

2011 ◽  
Vol 295-297 ◽  
pp. 1958-1963
Author(s):  
Jing Zhi Yang ◽  
Li Juan Fu ◽  
Xiao Peng Qi ◽  
Hong Yun Li
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Ambient Pressure ◽  
Visible Region ◽  
Hexagonal Structure ◽  
Axis Orientation ◽  
X Ray ◽  
Laser Molecular Beam Epitaxy

Zn1-xCoxO thin films on sapphire (0001) substrates were synthesized by laser molecular beam epitaxy (LMBE) method at various temperatures under a work ambient pressure of 5.0 x 10-5Pa condition. X-ray diffraction (XRD) spectra, UV–visible transmission spectra and X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectra were employed to characterize the properties of samples. All samples were of wurtzite hexagonal structure with the preferential c-axis-orientation. Co2+ions incorporated into ZnO lattice and substituted for Zn2+ions. ZnLMM Auger spectrum implied Zn interstitials existed in sample. The optical transmission of all samples was relatively high in visible region. Two PL emission peaks located at 418 nm and 490 nm were assigned to the electron transition from the Zn interstitials to the top of the valence band and from the Zn interstitials to the Zn vacancies, respectively.

Cubic ZnxMg1−xO thin films grown by plasma-assisted molecular-beam epitaxy for optoelectronic applications

2010 ◽  
Vol 25 (6) ◽  
pp. 1072-1079 ◽  
Author(s):  
J.W. Mares ◽  
R.C. Boutwell ◽  
A. Scheurer ◽  
W.V. Schoenfeld
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Phase Segregation ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zn Concentration ◽  
Zinc Concentrations ◽  
Lattice Matched

Heteroepitaxial ZnxMg1−xO thin films were grown on lattice-matched MgO (100) substrates using radiofrequency plasma-assisted molecular-beam epitaxy. High-quality epilayers with zinc concentrations ranging from x = 0 (MgO) to x = 0.65 were grown and characterized optically, structurally, and electrically. The ZnxMg1−xO films were found to maintain the rocksalt cubic (B1) crystal structure for concentrations z < 0.65, with a linear dependence of lattice constant on Zn concentration. X-ray diffraction (XRD) also revealed the emergence of phase segregation into wurtzite (B4) phase for the highest concentration film. The band gap energy of the films was successfully varied from 4.9 to 6.2 eV (253–200 nm), showing a linear relationship with Zn concentration. The strictly cubic films exhibit roughness on the order of 10 Å and resistivities of approximately 106 Ω·cm.

scholarly journals Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Yu-Chiao Lin ◽  
Ikai Lo ◽  
Hui-Chun Shih ◽  
Mitch M. C. Chou ◽  
D. M. Schaadt
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Anisotropic Growth ◽  
X Ray Diffraction ◽  
X Ray

M-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [112-0]. According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate. The formation of Li5GaO4 would influence the surface morphology and crystal quality.

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