New Features of Dark and Photoconductivity Response of Low Energy Ar+ Ion bombarded GaAs

1989 ◽  
Vol 147 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Low Energy ◽  
Persistent Photoconductivity ◽  
Quenching Rate ◽  
Gaas Sample ◽  
Thermally Activated ◽  
Trap Location ◽  
Photoconductivity Response

AbstractPhotoconductivity measurements have been made on three SI GaAs sample types: Ar+ ion etched at leV, 3keV, and unetched. Measurements were made versus time, wavelength, and temperature. Photoquenching was done at 1.19 and 2.0eV energy.Some distinct changes in photoconductive properties are caused by the ion etch: 1) Increase in dark resistance; 2) presence of persistent photoconductivity; 3) increased photosensitivity; 4) increase In quenching rate under 2eV illumination; 5) destruction of the 0.47eV thermally activated photoconductivity.All samples exhibit Shockley-Read recombination controlled photoconductivity below a temperature of 125K, with the same apparent trap location, at 0.26eV above EF.

Photoquenching Of Persistent Photoconductivity In N-Type GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
Michèle T. Hirsch ◽  
O. Seiferta ◽  
O. Kirfel ◽  
J. Parisia ◽  
J. A. Wolk ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Cross Sections ◽  
Spectral Dependence ◽  
Room Temperature ◽  
Preliminary Investigation ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Quenching Effect ◽  
Optical Quenching ◽  
Thermally Activated

AbstractWe report on the observation of optical quenching of persistent photoconductivity (PPC) in unintentionally doped n-type GaN films. The PPC is induced by subbandgap illumination between room temperature and 77K. The corresponding decay, which.is thermally activated, is substantially increased upon low energy illumination, e.g. illumination by wavelengths between 1O50nm and 700nm. We measure the saturation conductivity under simultaneous illumination with excitation and quenching light and find that some wavelengths can induce both excitation and quenching of photoconductivity. Additionally, we present a preliminary investigation of the spectral dependence of the quenching effect. A simulation indicates only a weak spectral dependence of the quenching cross-sections in the wavelength range from 470nm–1050nm.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Indoor air quality and thermal comfort evaluation in a Spanish modern low-energy office with thermally activated building systems

2015 ◽  
Vol 21 (8) ◽  
pp. 1091-1099 ◽  
Author(s):  
Francisco Javier Rey Martínez ◽  
Manuel Andrés Chicote ◽  
Antonio Villanueva Peñalver ◽  
Ana Tejero Gónzalez ◽  
Eloy Velasco Gómez
Keyword(s):  
Air Quality ◽  
Thermal Comfort ◽  
Indoor Air Quality ◽  
Indoor Air ◽  
Low Energy ◽  
Thermally Activated ◽  
Comfort Evaluation ◽  
Building Systems

Relaxation Measurements of the Persistent Photoconductivity in Sulfur-Doped a-Si:H.

1996 ◽  
Vol 420 ◽  
Author(s):  
D. Quicker ◽  
J. Kakalios
Keyword(s):  
Activation Energy ◽  
Relaxation Time ◽  
Sulfur Atom ◽  
Hydrogenated Amorphous Silicon ◽  
Persistent Photoconductivity ◽  
Sulfur Concentration ◽  
Illumination Time ◽  
Thermally Activated ◽  
Relaxation Measurements ◽  
Hydrogenated Amorphous

AbstractThe slow relaxation of the persistent photoconductivity (PPC) effect in sulfur-doped hydrogenated amorphous silicon (a-Si:H) has been measured as a function of temperature and illumination time. The relaxation is found to be thermally activated, with an activation energy which varies with sulfur concentration, while illuminating the film for a longer time leads to a longer relaxation time. A correlation is observed between changes of the photoconductivity during illumination and the magnitude of the PPC effect following illumination. These effects are also observed in compensated a-Si:H, suggesting that the mechanism for the PPC effect is the same in both sulfur-doped a-Si:H and compensated a-Si:H. The presence of donor and compensating acceptor states in sulfur-doped a-Si:H could arise from valence alternation pair sulfur atom defects.

scholarly journals Low energy consumption phosphorescent organic light-emitting diodes using phenyl anthracenone derivatives as the host featuring bipolar and thermally activated delayed fluorescence

RSC Advances ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 6881-6889 ◽  
Author(s):  
Zhonghua Ye ◽  
Zhitian Ling ◽  
Minyu Chen ◽  
Jiali Yang ◽  
Shuanglong Wang ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Light Emitting Diodes ◽  
Delayed Fluorescence ◽  
Low Energy ◽  
Organic Light Emitting Diodes ◽  
Thermally Activated Delayed Fluorescence ◽  
Light Emitting ◽  
Thermally Activated ◽  
Organic Light ◽  
Low Energy Consumption

A bipolar host material 10-(4-(5,5-dimethylbenzofuro[3,2-c]acridin-13(5H)-yl)phenyl)-10-phenylanthracen-9(10H)-one (DphAn-5BzAc) with TADF properties, has been synthesized.

scholarly journals Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

2007 ◽  
Vol 91 (14) ◽  
pp. 142120 ◽  
Author(s):  
S. Dasgupta ◽  
C. Knaak ◽  
J. Moser ◽  
M. Bichler ◽  
S. F. Roth ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
High Mobility ◽  
Persistent Photoconductivity ◽  
Thermally Activated ◽  
Donor Binding Energy

Charge Trapping by Deep Donors in Si-Doped AlxGa1-xAS

1985 ◽  
Vol 46 ◽  
Author(s):  
P. M. Mooney ◽  
N. S. Caswell ◽  
P. M. Solomon ◽  
S. L. Wright
Keyword(s):  
Activation Energy ◽  
Energy Range ◽  
Charge Trapping ◽  
Lattice Relaxation ◽  
Persistent Photoconductivity ◽  
Relaxation Model ◽  
Thermally Activated ◽  
Large Lattice ◽  
Si Doped ◽  
Kinetics Of

AbstractThe kinetics of charge capture by deep donors in AlxGa1-xAs have been measured. The time dependence indicates that a single energy cannot be used to describe the trap. A model assuming thermally activated capture into a resonance in the conduction band with a range of energies gives excellent fits to the data and provides a measure of the energy range for the trap. This model is consistent with the large lattice relaxation model for DX centers. The increase of the activation energy for capture as the Al mole fraction is decreased contradicts the model which attributes the decay of the persistent photoconductivity to tunneling through the heterojunction barrier in modulationdoped structures.

A red thermally activated delayed fluorescence material as a triplet sensitizer for triplet–triplet annihilation up-conversion with high efficiency and low energy loss

2017 ◽  
Vol 5 (48) ◽  
pp. 12674-12677 ◽  
Author(s):  
Danqing Wei ◽  
Fan Ni ◽  
Zece Zhu ◽  
Yang Zou ◽  
Chuluo Yang
Keyword(s):  
Energy Loss ◽  
High Efficiency ◽  
Stokes Shift ◽  
Delayed Fluorescence ◽  
Low Energy ◽  
Thermally Activated Delayed Fluorescence ◽  
Thermally Activated ◽  
Fluorescence Material ◽  
Anti Stokes ◽  
Triplet Triplet Annihilation

A red thermally activated delayed fluorecence molecule was employed to realize green-to-blue up-conversion emission with a large anti-Stokes shift and high ΦUC′.

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