scholarly journals Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

2007 ◽  
Vol 91 (14) ◽  
pp. 142120 ◽  
Author(s):  
S. Dasgupta ◽  
C. Knaak ◽  
J. Moser ◽  
M. Bichler ◽  
S. F. Roth ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
High Mobility ◽  
Persistent Photoconductivity ◽  
Thermally Activated ◽  
Donor Binding Energy

scholarly journals Ground-state Shallow-donor Binding Energy in (In,Ga)N/GaN Double QWs Under Temperature, Size, and the Impurity Position Effects

2021 ◽  
Vol 4 (1) ◽  
pp. 1-6
Author(s):  
Redouane En-nadir ◽  
Haddou El Ghazi ◽  
Anouar Jorio ◽  
Izeddine Zorkani
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Ground State ◽  
Shallow Donor ◽  
Effect Of Temperature ◽  
Position Effects ◽  
Coupled Quantum Wells ◽  
Impurity Position ◽  
Mass Approximation ◽  
Donor Binding Energy

In this paper, we study the hydrogen-like donor-impurity binding energy of the ground-state change as a function of the well width under the effect of temperature, size, and impurity position. Within the framework of the effective mass approximation, the Schrodinger-Poisson equation has been solved taken account an on-center hydrogen-like impurity in double QWs with rectangular finite confinement potential profile for 10% of indium concentration in the (well region). The eigenvalues and their correspondent eigenvectors have been obtained by the fined element method (FEM). The obtained results are in good agreement with the literature and show that the temperature, size, and the impurity position have a significant impact on the binding energy of a hydrogen-like impurity in symmetric double coupled quantum wells based on non-polar wurtzite (In,Ga) N/GaN core/Shell.

scholarly journals High efficiency blue organic light-emitting diodes with below-bandgap electroluminescence

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Maria Vasilopoulou ◽  
Abd. Rashid bin Mohd Yusoff ◽  
Matyas Daboczi ◽  
Julio Conforto ◽  
Anderson Emanuel Ximim Gavim ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diodes ◽  
High Mobility ◽  
Organic Light Emitting Diodes ◽  
Triplet Energy ◽  
Material Interface ◽  
Light Emitting ◽  
Thermally Activated ◽  
Organic Light ◽  
Hole Transporting

AbstractBlue organic light-emitting diodes require high triplet interlayer materials, which induce large energetic barriers at the interfaces resulting in high device voltages and reduced efficiencies. Here, we alleviate this issue by designing a low triplet energy hole transporting interlayer with high mobility, combined with an interface exciplex that confines excitons at the emissive layer/electron transporting material interface. As a result, blue thermally activated delay fluorescent organic light-emitting diodes with a below-bandgap turn-on voltage of 2.5 V and an external quantum efficiency (EQE) of 41.2% were successfully fabricated. These devices also showed suppressed efficiency roll-off maintaining an EQE of 34.8% at 1000 cd m−2. Our approach paves the way for further progress through exploring alternative device engineering approaches instead of only focusing on the demanding synthesis of organic compounds with complex structures.

scholarly journals Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001)

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Joon Sue Lee ◽  
Borzoyeh Shojaei ◽  
Mihir Pendharkar ◽  
Mayer Feldman ◽  
Kunal Mukherjee ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Mobility ◽  
Near Surface ◽  
Barrier Materials

Quantum transport in high mobility modulation doped Ga0.25In0.75As/InP quantum wells

1998 ◽  
Vol 84 (4) ◽  
pp. 2112-2122 ◽  
Author(s):  
P. Ramvall ◽  
N. Carlsson ◽  
P. Omling ◽  
L. Samuelson ◽  
W. Seifert ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Transport ◽  
High Mobility
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