scholarly journals Persistent photoconductivity in low‐energy argon ion‐bombarded semi‐insulating GaAs

1991 ◽  
Vol 58 (11) ◽  
pp. 1193-1195 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.


2021 ◽  
Vol 27 (S1) ◽  
pp. 20-22
Author(s):  
Chengge Jiao ◽  
Jeremy Graham ◽  
Xu Xu ◽  
Timothy Burnett ◽  
Brandon van Leer

1996 ◽  
Vol 79 (6) ◽  
pp. 2934-2941 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
H. S. Tan ◽  
K. L. Tan

2021 ◽  
Vol 53 (3) ◽  
pp. 18-23
Author(s):  
Yulia A. Timoshina ◽  
Emil F. Voznesensky ◽  
Victor S. Zheltukhin

Results of the molecular dynamic simulation of the interaction of low-energy ions (from 10 to 100 eV) with the surface of polypropylene fibrous materials in low pressure radio-frequency (RF) argon plasma is presented. A full-atomic model using the LAMMPS classical molecular dynamics code was made. As a result of numerical calculations, it was found that argon ion bombardment initiates the breaking both of an intermolecular and intramolecular bond of polypropylene with sputtered particles being the hydrocarbon radicals and single atoms. The depth of implantation of the ion is determined, the change in the kinetic energy of the argon atom and the temperature of the simulated cell is obtained.


2018 ◽  
Vol 112 (24) ◽  
pp. 241601
Author(s):  
Xi Yan ◽  
Hongrui Zhang ◽  
Hui Zhang ◽  
Tahira Khan ◽  
Jine Zhang ◽  
...  

2019 ◽  
Vol 25 (S2) ◽  
pp. 548-549
Author(s):  
Mikhail Dutka ◽  
Romaine Isaacs ◽  
Anna Prokhodtseva ◽  
Tomáš Vystavěl

Langmuir ◽  
1993 ◽  
Vol 9 (3) ◽  
pp. 740-748 ◽  
Author(s):  
Beng Jit Tan ◽  
Mebrahtu Fessehaie ◽  
Steven L. Suib

2003 ◽  
Vol 203-204 ◽  
pp. 354-358 ◽  
Author(s):  
P. Konarski ◽  
A. Mierzejewska
Keyword(s):  

2004 ◽  
Vol 30 (7) ◽  
pp. 545-547
Author(s):  
G. V. Kornich ◽  
G. Betz ◽  
V. I. Zaporojtchenko ◽  
N. I. Belaya

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