Partially Ionized Beam Deposition of Thin Films

1989 ◽  
Vol 147 ◽  
Author(s):  
T.-M. Lu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Damage ◽  
Surface Interactions ◽  
Surface Cleaning ◽  
Film Properties ◽  
Surface Ordering ◽  
Partially Ionized ◽  
Enhanced Surface ◽  
Beam Deposition

AbstractIt has been shown recently that using less than a few percent of self-ions, i.e., ions derived from the deposition material itself, (partially ionized beam (PIB) deposition), one can dramatically modify thin film properties. In this paper we discuss phenomena such as surface cleaning, enhanced surface ordering, and ion-induced surface damage associated with PIB-surface interactions. PIB metal deposition has been emphasized.

scholarly journals Detection of nitroaromatic vapours with diketopyrrolopyrrole thin films: exploring the role of structural order and morphology on thin film properties and fluorescence quenching efficiency

2015 ◽  
Vol 51 (6) ◽  
pp. 1143-1146 ◽  
Author(s):  
Monika Warzecha ◽  
Jesus Calvo-Castro ◽  
Alan R. Kennedy ◽  
Alisdair N. Macpherson ◽  
Kenneth Shankland ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fluorescence Quenching ◽  
Optical Detection ◽  
Film Properties ◽  
Structural Order ◽  
Quenching Efficiency ◽  
First Time

Sensitive optical detection of nitroaromatic vapours with diketopyrrolopyrrole thin films is reported for the first time.

Partially ionized beam deposition of 2‐methyl‐4‐nitroaniline thin films

1991 ◽  
Vol 70 (11) ◽  
pp. 6766-6773 ◽  
Author(s):  
T. C. Nason ◽  
J. F. McDonald ◽  
T.‐M. Lu
Keyword(s):  
Thin Films ◽  
Partially Ionized ◽  
Beam Deposition

Enhanced properties of metal–organic framework thin films fabricated via a coordination modulation-controlled layer-by-layer process

2017 ◽  
Vol 5 (26) ◽  
pp. 13665-13673 ◽  
Author(s):  
Suttipong Wannapaiboon ◽  
Kenji Sumida ◽  
Katharina Dilchert ◽  
Min Tu ◽  
Susumu Kitagawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Adsorption Capacity ◽  
Metal Organic Framework ◽  
Layer By Layer ◽  
Film Properties ◽  
Metal Organic ◽  
Enhanced Properties ◽  
P Addition ◽  
Organic Framework

Addition of a modulator in the LPE process enhances MOF thin film properties by boosting their crystallinity, orientation uniformity, and adsorption capacity.

Polydispersity Effects in Evaporation of Perfluoropolyether Thin Films

2001 ◽  
Author(s):  
Michael Stirniman ◽  
Jing Gui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Molecular Weight ◽  
Weight Distribution ◽  
Evaporation Rate ◽  
Surface Interactions ◽  
Bulk Liquid ◽  
Vapor Pressures ◽  
Thin Film Evaporation ◽  
Film Evaporation

Abstract The evaporation rates of bulk liquid and thin films of an alcohol-derivatized perfluoropolyether have been studied experimentally and computationally. We find that the time dependence of the evaporation rate in both cases is dominated by the polydispersity, and can be described very well by a model that incorporates the molecular weight distribution, molecular-weight-dependent Arrhenius parameters of evaporation, and Raoult’s law of vapor pressures. Minor corrections to the model that account for surface interactions are necessary in the case of thin film evaporation.

Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

1998 ◽  
Vol 520 ◽  
Author(s):  
A. Maldonado ◽  
D.R. Acosta ◽  
M. De La Luz Olvera ◽  
R. Castanedo ◽  
G. Torres ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Film Properties ◽  
Preferential Growth ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTZinc oxide thin films doped with zirconium were prepared from solutions with doping material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic glasses at different substrate temperatures. Effects of doping material concentration and substrate temperatures on electrical, optical, structural and morphological film properties are presented. Results show an evolution in morphology and grains size as the doping concentration is increased. Preferential growth in the (002) orientation was detected for each thin film from X ray diffractograms.

Laser Assisted Molecular Beam Deposition of Thin Films for Gate Dielectrics Applications

2003 ◽  
Vol 768 ◽  
Author(s):  
Robert L. DeLeon ◽  
James F. Garvey ◽  
Gary S. Tompa ◽  
Richard Moore ◽  
Harry Efstathiadis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Molecular Beam ◽  
High Dielectric Constant ◽  
Film Surface ◽  
Rutherford Back Scattering ◽  
Molecular Beam Deposition ◽  
High Dielectric ◽  
Beam Deposition

AbstractHigh dielectric constant (k), the thermal stability and the chemical stability with respect to reaction with silicon of hafnium oxide (HfO2), and zirconium oxide (ZrO2) places them among the leading candidates for an alternative gate dielectric material. High dielectric constant HfO2 and ZrO2 thin films have successfully been deposited on silicon substrates at a temperature of 27 °C by Laser Assisted Molecular Beam Deposition (LAMBD). The LAMBD process is related to conventional Pulsed Laser Deposition (PLD). In the PLD process, the ablation plume impinges directly upon the substrate to deposit the thin film, whereas in the LAMBD process, the ablation material is expanded within a concurrently pulsed stream of a reactive gas. The gas pulse serves both to create the desired material and to transport the material to the substrate for deposition of the thin film. One advantage of the LAMBD process is that a chemically reactive carrier gas can be selected to produce the desired chemical products. Depositions yielded 35 nm to 135 nm thick HfO2, and ZrO2 films.Structural and chemical characterization of the films were performed by Auger electron spectroscopy (AES), Rutherford back-scattering (RBS), scanning electron microscopy (SEM), and x-ray diffraction (XRD). Film surface was investigated by atomic force microscopy (AFM) while optical characterization was also performed by means of spectroscopic ellipsometry (SE). Within the process window investigated, the film Hf/O and Zr/O ratios was found to be in the range 0.6 to 1.2. The as deposited films were amorphous with refraction index (RI) at 623 nm wavelength films in the range of 1.22 to 1.27 for the HfO2 and in the range of 1.23 to 1.19 for the ZrO2 films.

Observation of Dislocation DisAppearance in Aluminum Thin Films and Consequences for Thin Film Properties

1997 ◽  
Vol 505 ◽  
Author(s):  
P. Müllner ◽  
E. Arzt
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Short Range ◽  
Dislocation Core ◽  
Interaction Force ◽  
High Temperature Strength ◽  
Film Properties ◽  
Aluminum Films ◽  
Transmission Electron ◽  
Diffusive Movement

ABSTRACTDislocation structures in Al-Cu thin films have been studied by transmission electron microscopy (TEM). We have observed that the contrast of interface dislocations disappears in the electron beam. We assume that the contrast dissolution is due to the spreading of the dislocation core at the crystalline/amorphous interface or due to a diffusive movement of the dislocation through the oxide. In any case, the relaxation is assumed to be controled by irradiation induced diffusion. As a consequence, the short range stresses and at least partly also the long range stresses of the dislocations relax. This relaxation changes the interaction force between dislocations and may thus significantly affect the mechanical properties of thin films. It is concluded that interaction between interface dislocations may not be responsible for the high temperature strength of aluminum films.

THERMODYNAMIC AND KINETIC PROPERTIES OF MECHANICAL OSCILLATIONS IN THIN FILMS

2006 ◽  
Vol 20 (24) ◽  
pp. 3507-3532 ◽  
Author(s):  
DUŠAN POPOV ◽  
VJEKOSLAV SAJFERT ◽  
BRATISLAV TOŠIĆ
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Green's Function ◽  
Spatial Dependence ◽  
Function Method ◽  
Physical Characteristics ◽  
Kinetic Properties ◽  
Film Properties ◽  
Application Field ◽  
Mechanical Oscillations

The advanced methodology of Green's function method and application of this new methodology have resulted in a set of interesting conclusions concerning thin film properties. It has been concluded that thin films possess high superconductive, thermoisolation and acoustical isolation properties. It is also concluded that physical characteristics of thin films are spatially dependent and that this spatial dependence can be the basis for widening of the nanostructures application field.

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