scholarly journals Detection of nitroaromatic vapours with diketopyrrolopyrrole thin films: exploring the role of structural order and morphology on thin film properties and fluorescence quenching efficiency

2015 ◽  
Vol 51 (6) ◽  
pp. 1143-1146 ◽  
Author(s):  
Monika Warzecha ◽  
Jesus Calvo-Castro ◽  
Alan R. Kennedy ◽  
Alisdair N. Macpherson ◽  
Kenneth Shankland ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fluorescence Quenching ◽  
Optical Detection ◽  
Film Properties ◽  
Structural Order ◽  
Quenching Efficiency ◽  
First Time

Sensitive optical detection of nitroaromatic vapours with diketopyrrolopyrrole thin films is reported for the first time.

Role of Kinetic Energy of Sputtered Particles in Thin Film Properties

1992 ◽  
Vol 268 ◽  
Author(s):  
Yasunori Taga
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Kinetic Energy ◽  
Materials Science ◽  
Sputter Deposition ◽  
Structure And Properties ◽  
Film Properties ◽  
Emission Effect ◽  
Exciting Area

ABSTRACTThe thin film processes of the sputter deposition method have been reviewed with special emphasis on the effects of kinetic energy of sputtered particles and ion bombardment during deposition on thin film properties. An overview is first given to describe the thin film process and ion-surface interactions, where the methods of measuring the energy distribution of sputtered ions and the anisotropic-emission-effect sputter deposition are presented. Experimental results for Cr, SiO2 and Ni-Si-B films are presented, and the correlation between the structure and properties of the thin films is discussed. Research in modification of thin films by energetic atoms and ions is an exciting area of materials science in the future.

Fe doping-stabilized γ-Ga2O3 thin films with a high room temperature saturation magnetic moment

2020 ◽  
Vol 8 (2) ◽  
pp. 536-542 ◽  
Author(s):  
Yuanqi Huang ◽  
Ang Gao ◽  
Daoyou Guo ◽  
Xia Lu ◽  
Xiao Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Moment ◽  
Room Temperature ◽  
Fe Doping ◽  
Saturation Magnetic Moment ◽  
First Time

A thermostable Fe-doped γ-Ga2O3 thin film with a high room temperature saturation magnetic moment of 5.73 μB/Fe has been obtained for the first time.

Enhanced properties of metal–organic framework thin films fabricated via a coordination modulation-controlled layer-by-layer process

2017 ◽  
Vol 5 (26) ◽  
pp. 13665-13673 ◽  
Author(s):  
Suttipong Wannapaiboon ◽  
Kenji Sumida ◽  
Katharina Dilchert ◽  
Min Tu ◽  
Susumu Kitagawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Adsorption Capacity ◽  
Metal Organic Framework ◽  
Layer By Layer ◽  
Film Properties ◽  
Metal Organic ◽  
Enhanced Properties ◽  
P Addition ◽  
Organic Framework

Addition of a modulator in the LPE process enhances MOF thin film properties by boosting their crystallinity, orientation uniformity, and adsorption capacity.

Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

1998 ◽  
Vol 520 ◽  
Author(s):  
A. Maldonado ◽  
D.R. Acosta ◽  
M. De La Luz Olvera ◽  
R. Castanedo ◽  
G. Torres ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Film Properties ◽  
Preferential Growth ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTZinc oxide thin films doped with zirconium were prepared from solutions with doping material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic glasses at different substrate temperatures. Effects of doping material concentration and substrate temperatures on electrical, optical, structural and morphological film properties are presented. Results show an evolution in morphology and grains size as the doping concentration is increased. Preferential growth in the (002) orientation was detected for each thin film from X ray diffractograms.

Observation of Dislocation DisAppearance in Aluminum Thin Films and Consequences for Thin Film Properties

1997 ◽  
Vol 505 ◽  
Author(s):  
P. Müllner ◽  
E. Arzt
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Short Range ◽  
Dislocation Core ◽  
Interaction Force ◽  
High Temperature Strength ◽  
Film Properties ◽  
Aluminum Films ◽  
Transmission Electron ◽  
Diffusive Movement

ABSTRACTDislocation structures in Al-Cu thin films have been studied by transmission electron microscopy (TEM). We have observed that the contrast of interface dislocations disappears in the electron beam. We assume that the contrast dissolution is due to the spreading of the dislocation core at the crystalline/amorphous interface or due to a diffusive movement of the dislocation through the oxide. In any case, the relaxation is assumed to be controled by irradiation induced diffusion. As a consequence, the short range stresses and at least partly also the long range stresses of the dislocations relax. This relaxation changes the interaction force between dislocations and may thus significantly affect the mechanical properties of thin films. It is concluded that interaction between interface dislocations may not be responsible for the high temperature strength of aluminum films.

Extrapolation of critical thickness of GaN thin films from lattice constant data using synchrotron X-ray

1996 ◽  
Vol 423 ◽  
Author(s):  
Chinkyo Kim ◽  
I. K. Robinson ◽  
Jaemin Myoung ◽  
Kyuhwan Shim ◽  
Kyekyoon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Thickness ◽  
Energy Estimate ◽  
Accurate Estimate ◽  
X Ray ◽  
Lattice Constants ◽  
Pseudomorphic Growth ◽  
Sudden Transition ◽  
First Time

AbstractIn some materials, Van der Merwe's equilibrium theory of strain relief is believed to explain the sudden transition from pseudomorphic growth of a thin film to a progressively relaxed state. We show, for the first time for GaN, how an accurate estimate of the critical thickness of a thin film can be extrapolated from suitable measurements of lattice constants as a function of film thickness using synchrotron X-ray. We do this both for an elementary elastic energy function, in which the interactions between the dislocations are ignored, and for a more realistic energy estimate due to Kasper. The method is found to work quantitatively for thin films of GaN on AIN. The critical thickness is determined to be 29 ± 4 Å.

Li2CO3 thin films fabricated by sputtering techniques: the role of temperature on their properties

CrystEngComm ◽  
2014 ◽  
Vol 16 (27) ◽  
pp. 6033-6038 ◽  
Author(s):  
Lander Rojo ◽  
Irene Castro-Hurtado ◽  
María C. Morant-Miñana ◽  
Gemma G. Mandayo ◽  
Enrique Castaño
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Electrochemical Devices

This work present the first steps of thin film solid state electrochemical devices development based on Li2CO3.

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