Properties of Thin Inter-Polysilicon Reoxidized Nitrided Oxides Prepared by Rapid Thermal Processing (RTO/RTN/RTO)

1989 ◽  
Vol 146 ◽  
Author(s):  
Andrew W. Cheung ◽  
G. Q. Lo ◽  
Dim-Lee Kwong ◽  
N. S. Alvi ◽  
A. Kermani
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Dielectric Strength ◽  
Breakdown Field ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Thermal Oxide ◽  
Non Volatile Memory ◽  
Thermal Nitridation ◽  
Memory Applications

ABSTRACTIn the search of a high quality thin inter-polysilicon dielectric which has high breakdown voltage and low leakage current for high density non-volatile memory applications, thin (150±) inter-polysilicon reoxidized nitrided oxide capacitors were fabricated with multiple rapid thermal processing. While rapid thermal nitridation degraded the breakdown field if compared to the rapid thermal oxide capacitors, rapid thermal reoxidation greatly enhanced the dielectric strength of the rapid thermal nitrided samples. The short reoxidations increased the film thickness by less than 10 \. Breakdown field of optimized inter-polysilicon RTO/RTN/RTO capacitors up to 14 MV/cm has been measured.

Characterization of PSG Films Reflowed in Steam Using Rapid Thermal Processing

1985 ◽  
Vol 52 ◽  
Author(s):  
N. Shah ◽  
J. M. C. Vittie ◽  
N. Sharif ◽  
J. Nulman ◽  
A. Gat
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Operating Regime ◽  
Junction Depth ◽  
Thermal Oxide ◽  
Rapid Thermal Annealer ◽  
Flow Cycle ◽  
Phosphosilicate Glass

ABSTRACTThis study describes the use of a steam environment to reflow phosphosilicate glass (PSG) samples using a HEATPULSE® rapid thermal annealer. The samples comprised PSG over poly steps and of open contacts in PSG. It was observed that reflow occurs 50°C lower in steam than in dry O2. An acceptable flow cycle for 8 w/o P in PSG glass is 1050°C for 10 seconds in steam, while for 6 w/o P PSG it is 1100°C for 10 seconds. Steam is found to be an effective amibient for densification of the PSG film. The thermal oxide grown in the contact during opening reflow was determined to be near 140 A. The operating regime for a junction depth <0.4 um and a reflow angle < 75° is presented for 8 w/o P.

scholarly journals Effect of catalyst HF concentration on the electrical characteristics of ultra low-k materials

2012 ◽  
Vol 6 (2) ◽  
pp. 97-101 ◽  
Author(s):  
Zhi-Wei He ◽  
Shi-Qiu Zhu ◽  
Sheng-Li Wang ◽  
Zheng Qi ◽  
Yu-Yuan Guan
Keyword(s):  
Dielectric Constant ◽  
Sol Gel ◽  
Breakdown Field ◽  
Moisture Resistance ◽  
Electrical Characteristics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Sol Gel Process ◽  
Capacitance Voltage ◽  
Low K

The effects of catalyst HF concentration on the dielectric and electrical properties of SiOF films are discussed. From the current density-voltage and capacitance-voltage curves, we observed that the film catalyzed with the special concentration of HF (the ratio of HF/H2O = 1/5) shows good moisture resistance, low leakage current (10-11 A/cm2 at 1 MV/cm) and high breakdown field (6 MV/cm), which can be explained by the results of Fourier transform infrared spectra. The dielectric constant value is also very low and reaches about 1.75 after annealing at the temperature of 450?C. Therefore, the concentration of HF catalyst is an important factor in the sol-gel process.

Transparent Transistors Based on Semiconducting Oxides

2003 ◽  
Vol 786 ◽  
Author(s):  
Y.W. Kwon ◽  
Y. Li ◽  
Y.W. Heo ◽  
M. Jones ◽  
Vijay ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Field Effect Transistors ◽  
Dielectric Strength ◽  
Charge Densities ◽  
Low Leakage ◽  
Active Layers ◽  
Low Leakage Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
High Conductance

ABSTRACTThe synthesis and properties of oxide-based thin film transistors (TFTs) is reported using pulsed laser deposition. The field effect transistors use ZnO as the channel material. Low leakage current density is achieved with amorphous (CeTb)MgAl11O19 (CTMA) serving as the gate oxide, whose dielectric strength is measured to be > 5MV/cm for structures fabricated on Indium Tin oxide (ITO) substrates. Capacitance-voltage properties show that n-type active layers are realized with undoped ZnO. Charge densities in undoped ZnO are measured to be 1018 to 1019 / cm3 using Hall measurement and CV plots. Current-voltage measurements for TFT operation are reported. Channel materials on patterned substrates show high conductance and modulation of channel conductance. C-V measurements with MOS structure using doped ZnO and ZnxMg1-xO will also be described. The properties of depletion mode TFTs fabricated with doped and undoped oxide channel will be discussed in detail.

The Effects of Lead-Compensation and Thermal Processing on the Characteristics of DC-Magnetron Sputtered Lead Zirconate Titanate Thin Films

1991 ◽  
Vol 230 ◽  
Author(s):  
Vinay Chikarmane ◽  
Chandra Sudhama ◽  
Jiyoung Kim ◽  
Jack Lee ◽  
A I Tasch
Keyword(s):  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Large Scale ◽  
Random Access ◽  
Lead Zirconate ◽  
Thermal Budget ◽  
Low Leakage ◽  
Zirconate Titanate ◽  
Low Leakage Current ◽  
Scale Integration

AbstractThe feasibility of the fabrication of thin film capacitors of Lead Zirconate Titanate (PZT) by reactive DC-Magnetron sputtering, with large switched charge and low leakage current densities for ultra-large scale integration Dynamic Random Access Memory (ULSI DRAM) applications has been demonstrated. As-deposited films were found to be predominantly pyrochlore; therefore, a subsequent phase transformation-inducing thermal processing step was key to obtaining device quality films. The importance of the thermal budget in optimizing the device characteristics of PZT films is discussed. The importance of the role of Pb compensation in lowering the required thermal budget and significantly enhancing device characteristics is shown.

Optimization of a Tin/TiSi2 p+ Diffusion Barrier Process

1989 ◽  
Vol 146 ◽  
Author(s):  
S.S. Lee ◽  
C.S. Galovich ◽  
K.P. Fuchs ◽  
D.L. Kwong ◽  
J. Hirvonen ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing Parameters ◽  
Titanium Film ◽  
Rapid Thermal Anneal ◽  
P Diffusion ◽  
One Step ◽  
Thermal Nitridation ◽  
Metallization Process

ABSTRACTThe TiN/TiSi2 structure, formed by rapid thermal nitridation of a spatter-deposited titanium film, has been demonstrated to be effective as a diffusion barrier and as a low resistance contact material for VLSI submicron metallization. An optimization experiment, designed using the RS/Discover software package, was used to identify a metallization process that minimized p+ resistance as well as maximized barrier capability. Source/drain implant doses, as-deposited titanium film thickness, and rapid thermal processing parameters were the factors varied in the experiment. Of particular significance is a comparison of the effects of a two-step versus one-step rapid thermal anneal on control of the TiN/TiSi2 thickness ratio. A TiN layer of sufficient thickness for barrier integrity and adequate consumption of implant damage in the formation of the TiSi2 layer are desired. Electrical and thermal stability measuremints of the resultant AlSiCu/TiN/TiSi2 p+ contact system are presented.

Pattern Related Non-Uniformities During Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
R. Bremensdorfer ◽  
S. Marcus ◽  
Z. Nenyei
Keyword(s):  
Thermal Processing ◽  
Rapid Heating ◽  
Rapid Thermal Processing ◽  
Emission Spectra ◽  
Wafer Surface ◽  
Interference Effects ◽  
Indirect Control ◽  
Thermal Oxide ◽  
Substrate Temperatures ◽  
Related Process

AbstractState of the art rapid thermal processing is able to produce a lateral thermal homogeneity which is within the inherent resolution limits of current meterology. For the most commonly used direct or indirect control methods such as multiple thermocouple measurements, rapid thermal oxidation (RTO), or rapid thermal annealing (RTA) of plain semiconductor wafers this limit is ± 2°C. As homogeneity requirements approach those limits, pattern induced non-uniformities are getting more important.In order to achieve rapid heating and high substrate temperatures in RTP, heater and substrate are not in equilibrium and their emission spectra differ considerably. Under such circumstances laterally varying optical characteristics on the substrate itself imply thermal non-uniformities. The influence of patterns on a silicon wafer surface on the temperature uniformity is studied. Passive patterns showing interference effects were formed out of thermal oxide and Si3N4. RTO and RTA, as well as embedded thermocouples were used for temperature measurement. The data presented show that major non-uniformities due to interference effects can be reduced by restricting the energy transfer through the patterned side of the wafer. It is shown that independent top and bottom heater bank control and controlled thermal kinetics are suitable methods to reduce the pattern related process non-uniformities.

Thin silicon dioxide and nitrided oxide using rapid thermal processing for trench capacitors

1991 ◽  
Vol 6 (11) ◽  
pp. 2362-2370 ◽  
Author(s):  
Kenji Yoneda ◽  
Yoshihiro Todokoro ◽  
Morio Inoue
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Dielectric Strength ◽  
Gate Insulator ◽  
Time To Failure ◽  
Electrical Characteristics ◽  
Gate Insulators ◽  
Conventional Furnace ◽  
The Mean ◽  
Mean Time

Electrical characteristics of trench capacitors using RTO (Rapid Thermal Oxidation) oxides, nitroxides, and reoxidized nitroxides as the gate insulators are discussed. High temperature RTO is effective in preventing oxide thinning at the trench corner, and so the dielectric strength of trench capacitors is improved drastically. The mean time to failure (MTTF) of trench capacitors using RTO is more than ten times longer than that of trench capacitors using conventional furnaces. Using reoxidized nitroxides as the gate insulator, superior charge to breakdown (QBD) is obtained. RTP (Rapid Thermal Processing) is superior to the process using the conventional furnace for the gate insulators of trench capacitors. Improvements in temperature uniformity, repeatability, and lessening of slip line formation are essential for RTP equipment to be practical.

Rapid Thermal Processing-Manufacturing Perspective

1995 ◽  
Vol 387 ◽  
Author(s):  
R. P. S. Thakur ◽  
K. Schuegraf ◽  
P. Fazan ◽  
H. Rhodes ◽  
R. Zahorik
Keyword(s):  
Thermal Processing ◽  
Large Diameter ◽  
Rapid Thermal Processing ◽  
Economic Benefits ◽  
Good News ◽  
Ongoing Research ◽  
Dopant Activation ◽  
Defect Control ◽  
Thermal Nitridation ◽  
Faster Development

AbstractWhile repeatable and accurate measurement of temperature in rapid thermal processing (RTP) remains a subject of ongoing research, inception of large-diameter wafers and deep subhalf micron design rules may be viewed as good news for implementing RTP during the development phase for later transfer to volume manufacturing. To date, the only well-established application of RTP in manufacturing is silicide annealing. However, research during the past decade has demonstrated the feasibility of using RTP to replace essentially all furnace-based thermal processes in sub-half micron process flows. These developments in the RTP capability offer several technological and economic benefits such as improved defect control, higher product yields, and faster development cycles for DRAM-type technologies at a reduced cost and with an earlier entry of the driver products during the revenue-generating period.In this paper, we review several applications of RTP such as silicide anneals, borophosphosilicate glass (BPSG) reflow, dopant activation, and rapid thermal nitridation (RTN) and discuss the integration issues related to advanced process flows. Furthermore, we highlight important manufacturing parameters like throughput, machine cost and uptime, software and hardware issues, wafer dimensional analysis, and simulation expectations. While considering volume manufacturing, we make some calibration and process control recommendations.

Single Crystal Gd203 Films Epitaxially Grown on GaAs - A New Dielectric for GaAs Passivation

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Hong ◽  
J. Kwo ◽  
A. R. Kortan ◽  
J. P. Mannaerts ◽  
M. C. Wu ◽  
...  
Keyword(s):  
Oxide Film ◽  
Single Crystal ◽  
Oxide Semiconductor ◽  
Breakdown Field ◽  
Zero Bias ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Capacitance Voltage ◽  
Current Densities ◽  
And Inversion

AbstractSingle crystal Gd2O3 dielectric thin films were epitaxially grown on GaAs. The Gd2O3 film has a cubic structure isomorphic to Mn2O3, and is (110) oriented in single domain on the (100) GaAs surface. The oxide film has low leakage current densities ˜ 10–9 – 10–10 A/cmT2 at zero bias. Typical breakdown field is 4 MV/cm for an oxide film 185 Å thick, and >10 MV/cm for an oxide less than 50 Å thick. Both accumulation and inversion layers were observed in the Gd2O3-GaAs metal oxide semiconductor (MOS) diodes using capacitance-voltage (C-V) measurements, with an interfacial density of states around 1011 cm–2 eV–1.

scholarly journals Effect of sintering temperature on microstructure and nonlinear electrical characteristics of ZnO varistor

2018 ◽  
Vol 08 (02) ◽  
pp. 1850014 ◽  
Author(s):  
Ahmed Bouchekhlal ◽  
Farida Hobar
Keyword(s):  
Sintering Temperature ◽  
Grain Morphology ◽  
Breakdown Field ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Nonlinear Properties ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Average Grain Size

The nonlinear properties of ZBMCCS-based varistors, which are composed of ZnO–Bi2O3–MnO2–Cr2O3–Sb2O3–Co3O4 and SiO2 are studied inrelation to sintering temperature, in the range of 1280–1350[Formula: see text]C. The samples are investigated for grain morphology by using scanning electron microscope (SEM). These samples were examined by using X-ray diffraction patterns (XRD) and DC electrical measurements. X-ray diffraction analysis of the samples show the presence of ZnO, Zn2SiO4 willemite phase and Co[Formula: see text]Sb[Formula: see text]O4 spinel phases.The average grain size of ZnO increased as the sintering temperature increased from 2.57 to 6.84 [Formula: see text]m. In the examined temperature range, the breakdown field decreased from 2992 to 127[Formula: see text]V/cm with the increase of sintering temperature. This system gives a relatively high nonlinearity coefficient [Formula: see text] (at a sintering temperature of 1280[Formula: see text]C) with a low leakage current of 0.21[Formula: see text]mA/cm2.

Sign in / Sign up

Export Citation Format

Share Document