Rapid Thermal Annealing of As in Si

1989 ◽  
Vol 146 ◽  
Author(s):  
N.T. Shih ◽  
F.S. Huang ◽  
C.H. Chu ◽  
W.S. Chen
Keyword(s):  
Electric Field ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chebyshev Polynomial ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Thermal Treatments ◽  
Hot Electron ◽  
Polynomial Distribution ◽  
Electron Effects

ABSTRACTThe results of a detailed investigation of diffusion of ion implanted As in Si during Rapid Thermal Annealing are reported. A series of experiments has been performed on samples prepared for various thermal treatments, such as peroxidation and preheat. The RTA conditions were chosen at 850°C for 15 seconds in order to study the metastable state. Sample analysis includes depth profiling by RBS and Spreading Resistance measurements, electrical characterization employing Hall measurements, and residual defects by cross-section TEM and planar image. The carrier concentration profile shows the different extent of the mixed Gaussian-Chebyshev polynomial distribution for various prepared samples. We believe the neutral interstitial state I°(Si) survives during RTA for asreceived samples. It gives a Gaussian curve in As profile. The denuded region produced after thermal treatments reduces the oxygen content and creates less 1°(Si) during SPE. So the Gaussian-Chebyshev polynomial distribution was obtained. From the above study, we believe the Gaussian profile can be obtained by controlling RTA conditions This Gaussian-like profile can also suppress hot electron effects by its smooth gradient (generating small electric field) near drain and large overlap under spacer (making large electric field away from gate). So we fabricated rapid thermal annealing singlediffusion drain n-MOSFET. The reduction of hot electron effects was studied, too.

Rapid Thermal Annealing of As in Si

1985 ◽  
Vol 52 ◽  
Author(s):  
J. L. Hoyt ◽  
J. F. Gibbons
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Vacuum ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Wide Range ◽  
Time Cycle ◽  
Series Of Experiments ◽  
And Control ◽  
Measurement And Control

ABSTRACTThe results of a detailed investigation of the diffusion of ion implanted As in Si during Rapid Thermal Annealing (RTA) are reported. A series of experiments has been performed on samples implanted with As in a wide range of concentrations. The use of an improved thermocouple bonding technique enables precise measurement and control of the temperature versus time cycle for each individual sample. The RTA apparatus is designed to perform high vacuum annealing, eliminating the complications associated with point defect generating mechanisms at the surface, which are known to influence the diffusion of impurities in Si. Sample analysis includes depth profiling by SIMS and RBS, and electrical characterization employing VanderPauw and Spreading Resistance measurements.The resulting profiles have been analyzed via a numerical solution of the diffusion equation subject to the appropriate boundary conditions. With an effective As diffusivity of the form we find good simulation of all measured profiles with the standard values of D0 and D- from SUPREMIII and a one parameter fit to D= Recent results on the redistribution of low dose As implants in heavily phosphorus doped Si illustrate the strong Fermi level dependence. The model has also been successfully used to simulate RTA data in the literature where careful temperature measurements have been made.

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Stability of Ultra-Thin Gate Oxides with Boron Doped Polysilicon Gate Structures After Rapid Thermal Annealing

1993 ◽  
Vol 303 ◽  
Author(s):  
Bojun Zhang ◽  
Dennis M. Maher ◽  
Mark S. Denker ◽  
Mark A. Ray
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Depth Profiling ◽  
Gate Oxide ◽  
Annealing Condition ◽  
Dopant Diffusion ◽  
Boron Diffusion ◽  
Gate Oxides ◽  
Diffusion Behavior ◽  
Polysilicon Gate

ABSTRACTWe report a systematic study of dopant diffusion behavior for thin gate oxides and polysilicon implanted gate structures. Boron behavior is emphasized and its behavior is compared to that of As+ and BF2+. Dopant activation is achieved by rapid thermal annealing. Test structures with 100 Å, 60 Å and 30 Å gate oxides and ion implanted polysilicon gate electrodes were fabricated and characterized after annealing by SIMS, SEM, TEM, and C-V rpeasurements. For arsenic implanted structures, no dopant diffusion through a gate oxide of 30 Å thickness and an annealing condition as high as 1 100*C/1Os was observed. For boron implanted structures, as indicated by SIMS depth profiling, structures annealed at 1000*C/10s exhibit a so-called critical condition for boron diffusion through a 30 Å gate oxide. Boron dopant penetration is clearly observed for 60 Å gate oxides at an annealing condition of 1050 0C/10s. The flatband voltage shift can be as high as 0.56 volts as indicated by C-V measurements for boron penetrated gate oxides. However, 100 Å gate oxides are good diffusion barriers for boron at an annealing condition of 1100°C/10s. For BF2 implanted structures, the diffusion behavior is consistent with behavior reported in the literature.

X-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor Materials

2012 ◽  
Vol 195 ◽  
pp. 274-276 ◽  
Author(s):  
Philipp Hönicke ◽  
Matthias Müller ◽  
Burkhard Beckhoff
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Measurement Techniques ◽  
Depth Profiling ◽  
Low Energy ◽  
Semiconductor Materials ◽  
Leakage Currents ◽  
X Ray ◽  
20 Nm

The continuing shrinking of the component dimensions in ULSI technology requires junction depths in the 20-nm regime and below to avoid leakage currents. These ultra shallow dopant distributions can be formed by ultra-low energy (ULE) ion implantation. However, accurate measurement techniques for ultra-shallow dopant profiles are required in order to characterize ULE implantation and the necessary rapid thermal annealing (RTA) processes.

Effect of Rapid Thermal Annealing Time on the Structural and Optical Properties of Layered Structured SiOx/Au/SiOx Film

2012 ◽  
Vol 501 ◽  
pp. 221-225 ◽  
Author(s):  
Rosli Najwa ◽  
Kee Wah Chan ◽  
Putri Jamal Ilyani ◽  
Abdul Rahman Saadah ◽  
Boon Tong Goh ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Time ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Spherical Shape ◽  
Morphological Properties ◽  
Time Duration ◽  
Silicon Suboxide ◽  
Evaporation Technique

In this work, layer structured silicon suboxide/gold/silicon suboxide (SiOx/Au/SiOx) films were prepared by using plasma enhanced chemical vapor deposition assisted with hot wire evaporation technique. Post rapid thermal annealing (RTA) process was done on the as-prepared films for 100, 500 and 700s at constant temperature of 800oC in vacuum ambient. Effects of RTA process on the structural and morphological properties of films were studied using FE-SEM, depth profiling and XRD measurement. While, surface plasmon resonance (SPR) phenomenon exhibited by Au particles was investigated via the optical absorption spectra. SPR signals can be exhibited by sample annealed for longer time duration. Individual Au islands tend to form the spherical shape as a whole. Diffusion of Au particles towards the surface of SiOx film is temperature dependent and crystallite size of Au enlarges with the rapid thermal annealing time.

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