Contactless Measurements of the Surface Recombination Velocity of P—N and High—Low (P—P+, N—N+) Junctions Fabricated by Rapid Thermal Processing

1989 ◽  
Vol 146 ◽  
Author(s):  
A. Usami ◽  
N. Yamada ◽  
K. Matsuki ◽  
T. Takeuchi ◽  
T. Wada
Keyword(s):  
Thermal Processing ◽  
Decay Curve ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Effective Surface ◽  
Furnace Annealing ◽  
Photoconductive Decay ◽  
Recombination Velocity ◽  
Microwave Probe ◽  
Contactless Measurements

ABSTRACTA photoconductive decay curve is analyzed theoretically to determine the surface recombination velocity and the bulk lifetime separately. And it can be applied to experimental photoconductive decay curves using the reflectance microwave probe method. Then it is verified numerically and experimentally to lower the effective surface recombination velocity at p—n and high—low junctions. The high—low junctions used in this study were fabricated from the ionimplanted wafer by rapid thermal annealing or furnace annealing. Then it is shown that the measurement system in relation to surface recombination can apply to evaluations in the ion implantation and its annealing process.

Contactless Evaluation of the Surface Recombination Property of Silicon with an Ion-Implanted Layer

1995 ◽  
Vol 378 ◽  
Author(s):  
Akira Usami ◽  
Takanori Makino ◽  
Hideaki Yoshida ◽  
Etsuro Morita
Keyword(s):  
Dopant Concentration ◽  
Decay Curve ◽  
Surface Recombination ◽  
Excitation Pulse ◽  
Potential Barrier Height ◽  
Surface Recombination Velocity ◽  
Pulse Source ◽  
Effective Surface ◽  
Recombination Velocity ◽  
Experimental Decay

AbstractThe surface properties of silicon are investigated by the noncontact laser (λ=774nm)/microwave method. The effective surface recombination velocity (Seff) at an n+n high-low junction interface is estimated by fitting the experimental decay curve for excess carriers with the theoretical decay curve. The results show that Seg decreases as the dopant concentration increases and that Seff at the n+n high-low junction formed with a dose of 1×l015 ions/cm2 has values lower than 1 cm/s. And it is shown that Scff is inversely proportional to the potential barrier height of the n+n high-low junction. Similar results are obtained using an N2 laser (λ=337.1nm) instead of a laser diode (λ=774nm, 904nm) as a carrier excitation pulse source.

Contactless Characterization of the Surface Property of the Si+-Implanted GaAs

1994 ◽  
Vol 347 ◽  
Author(s):  
Akira Usami ◽  
Hideaki Yoshida ◽  
Masaya Ichimura ◽  
Takao Wada
Keyword(s):  
Surface Property ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Effective Surface ◽  
Calculation Results ◽  
Concentration Layer ◽  
High Carrier ◽  
Recombination Velocity ◽  
Microwave Probe

ABSTRACTThe surface recombination of GaAs which has a high carrier concentration layer (HCCL) formed by Si+ implantation has been investigated using the reflectance microwave probe (RMP) method. The RMP method enables us to evaluate the surface property of GaAs contactlessly and easily. The experimental results of the samples which were implanted with doses ranging from 1.0×1011 to 3.9×1012cm-2 at an energy of lOOke V indicate that the effective surface recombination velocity decreases with dosage because of HCCL formed after the annealing. On the other hand, the results of the samples which were implanted with a dose of 3.9 × 1012cm-2 at energies ranging from 30 to 180keV indicate that the effective surface recombination velocity increases with energy for energies larger than 50keV. We understood the reason by comparing with the numerical calculation results of an effective surface recombination velocity at a high-low junction interface.

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