Contactless Characterization of the Surface Property of the Si+-Implanted GaAs

1994 ◽  
Vol 347 ◽  
Author(s):  
Akira Usami ◽  
Hideaki Yoshida ◽  
Masaya Ichimura ◽  
Takao Wada
Keyword(s):  
Surface Property ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Effective Surface ◽  
Calculation Results ◽  
Concentration Layer ◽  
High Carrier ◽  
Recombination Velocity ◽  
Microwave Probe

ABSTRACTThe surface recombination of GaAs which has a high carrier concentration layer (HCCL) formed by Si+ implantation has been investigated using the reflectance microwave probe (RMP) method. The RMP method enables us to evaluate the surface property of GaAs contactlessly and easily. The experimental results of the samples which were implanted with doses ranging from 1.0×1011 to 3.9×1012cm-2 at an energy of lOOke V indicate that the effective surface recombination velocity decreases with dosage because of HCCL formed after the annealing. On the other hand, the results of the samples which were implanted with a dose of 3.9 × 1012cm-2 at energies ranging from 30 to 180keV indicate that the effective surface recombination velocity increases with energy for energies larger than 50keV. We understood the reason by comparing with the numerical calculation results of an effective surface recombination velocity at a high-low junction interface.

Contactless Measurements of the Surface Recombination Velocity of P—N and High—Low (P—P+, N—N+) Junctions Fabricated by Rapid Thermal Processing

1989 ◽  
Vol 146 ◽  
Author(s):  
A. Usami ◽  
N. Yamada ◽  
K. Matsuki ◽  
T. Takeuchi ◽  
T. Wada
Keyword(s):  
Thermal Processing ◽  
Decay Curve ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Effective Surface ◽  
Furnace Annealing ◽  
Photoconductive Decay ◽  
Recombination Velocity ◽  
Microwave Probe ◽  
Contactless Measurements

ABSTRACTA photoconductive decay curve is analyzed theoretically to determine the surface recombination velocity and the bulk lifetime separately. And it can be applied to experimental photoconductive decay curves using the reflectance microwave probe method. Then it is verified numerically and experimentally to lower the effective surface recombination velocity at p—n and high—low junctions. The high—low junctions used in this study were fabricated from the ionimplanted wafer by rapid thermal annealing or furnace annealing. Then it is shown that the measurement system in relation to surface recombination can apply to evaluations in the ion implantation and its annealing process.

Characterization of Plasma Induced Damage and Strain on InP Patterns and Their Impact on Luminescence

MRS Advances ◽  
2018 ◽  
Vol 3 (57-58) ◽  
pp. 3373-3378
Author(s):  
Marc Fouchier ◽  
Maria Fahed ◽  
Erwine Pargon ◽  
Névine Rochat ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Peak Shift ◽  
Surface Recombination Velocity ◽  
Degree Of Polarization ◽  
Strain Anisotropy ◽  
Luminescence Signal ◽  
Micron Size ◽  
Recombination Velocity ◽  
Cathodoluminescence Intensity

ABSTRACTThe effect of damage induced by plasma etching on the cathodoluminescence intensity of micron-size InP features is studied. At the etched bottom, it is found that the hard mask stripping process is sufficient to recover the luminescence. Within features, the presence of sidewalls reduces luminescence intensity due to additional non-radiative surface recombinations. For a n-doped sample, a carrier diffusion length of 0.84 μm and a reduced nonradiative surface recombination velocity of 2.58 are calculated. Hydrostatic strain within the etched features is measured using the peak shift of the luminescence signal, while in plane strain anisotropy is obtained from its degree of polarization, both with a resolution of about 100 nm.

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