Formation of Device Quality Si/SiO2 Interfaces in a Multichamber Integrated Processing System

1989 ◽  
Vol 146 ◽  
Author(s):  
S.S. Kim ◽  
D.V. Tsu ◽  
G. Lucovsky ◽  
G.G. Fountain ◽  
R.J. Markunas
Keyword(s):  
Processing System ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Ex Situ ◽  
Initial Surface ◽  
Oxide Deposition ◽  
Integrated Processing ◽  
Thickness Independent

ABSTRACTThis paper describes the key process steps in the low temperature, <300ºC, formation of device quality Si/SiO2 interfaces employing oxide deposition by Remote Plasma-Enhanced Chemical Vapor-Deposition (Remote PECVD). The quality of the Si/SiO2 interface correlates with the degree of surface reconstruction that is controlled by ex-situ wet cleaning and in-situ Rapid Flash Heating. Electronic properties of the MOS structure also vary with the deposited oxide thickness, independent of the initial surface quality.

In-Situ Observation of Chemical Vapor Deposition of Thin Sige Films by Optical Reflection Interferometry

1994 ◽  
Vol 375 ◽  
Author(s):  
G. Ritter ◽  
B. Tillack ◽  
M. Weidner ◽  
F. G. Böbel ◽  
B. Hertel
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Ex Situ ◽  
In Situ Observation ◽  
Optical Reflection ◽  
Initial Stage

AbstractChemical Vapor Deposition of Si1-x Gex – films on Si (100) and of polycrystalline Si1-x Gex, layers on SiO2 – coated substrates have been performed at a pressure of 200 Pa in the temperature range of 500°C – 800°C, correspondingly. To observe the growth process and to characterize the growing thin films at deposition conditions an optical reflection interferometer (PYRITIERS) has been used. Comparing the data obtained at growth temperature with ex- situ measurements by spectroscopic ellipsometry the temperature dependence of optical constants of SiGe films have been evaluated. The reflectivity measurements during the deposition process allow to study the quality of the heteroepitaxial film, even in the initial stage of epitaxial growth.

Control of Polysilicon Emitter Bipolar Transistor Characteristics by Rapid Thermal or Furnace Anneal of the Polysilicon/Silicon Interface

1992 ◽  
Vol 283 ◽  
Author(s):  
S. Bhattacharya ◽  
M. Lobo ◽  
L. Jung ◽  
S. Banerjee ◽  
R. Reuss ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Oxide Thickness ◽  
Bipolar Transistors ◽  
Ex Situ ◽  
Current Gain ◽  
Pressure Chemical ◽  
Break Up ◽  
Polysilicon Emitter ◽  
Silicon Interface

ABSTRACTIn this paper we report on the ability of rapid thermal annealing (1050C, 45s) and furnace annealing (900C, 30min) to partially break up the interfacial oxide in bipolar transistors with different oxide thicknesses at the polysilicon/silicon interface. We have obtained the different oxide thicknesses either by performing different ex situ cleans (RCA clean or RCA clean + HF dip) before Low Pressure Chemical Vapor Deposition (LPCVD) of polysilicon, or by using a cluster tool for polysilicon deposition with the ability to perform an in situ clean and then allowing the growth of different oxide thicknesses at the interface prior to polysilicon deposition. For the in situ cleaned devices, it is observed that after the interface anneal, the current gain increases with increasing oxide thicknesses, but with little penalty in terms of higher emitter resistance, Re. This indicates that by controllably increasing the interfacial oxide thickness and by subsequent annealing to partially break up the interfacial oxide, higher current gains can be obtained with little sacrifice in terms of higher Re.

In-Situ Characterization of Carbon Nanotube-Polystyrene Composite Deformation

2000 ◽  
Vol 6 (S2) ◽  
pp. 40-41
Author(s):  
D. Qian ◽  
E. C. Dickey ◽  
R. Andrews ◽  
T. Rantell ◽  
B. Safadi
Keyword(s):  
Carbon Nanotubes ◽  
Load Transfer ◽  
Electronic Materials ◽  
Composite Films ◽  
Chemical Vapor ◽  
Ex Situ ◽  
In Situ Tem ◽  
Multiwalled Carbon ◽  
Young’S Moduli

Carbon nanotubes (NTs) have novel electronic properties and exceptionally high Young's moduli on the order of TPa. so NTs have potential applications in advanced composite materials such as conductive polymers, electromagnetic-radio frequency interference (EMI/RFI) shielding material and opto-electronic materials. The utility of the nanotubes in composite applications depends strongly on the ability to disperse the NTs homogeneously throughout the matrix without destroying the integrity of the NTs. Furthermore, interfacial bonding between the NT and matrix is necessary to achieve load transfer across the interface, which is desirable for improving the mechanical properties of polymer composites.In this work, aligned multiwalled carbon nanotubes (MWNTs) produced by continuous chemical vapor deposition (CVD) (see Fig.l), were homogeneously dispersed in polystyrene (PS) matrices by a simple solution-evaporation method. Using this procedure, we made uniform MWNT-PS composite films ∼0.4mm thick for ex-situ mechanical tensile test and very thin films, ∼100nm, for in-situ TEM tests, as shown in Fig.2.

scholarly journals The SCOC database, a large, open, and global database with sediment community oxygen consumption rates

2019 ◽  
Vol 6 (1) ◽  
Author(s):  
Tanja Stratmann ◽  
Karline Soetaert ◽  
Chih-Lin Wei ◽  
Yu-Shih Lin ◽  
Dick van Oevelen
Keyword(s):  
Oxygen Consumption ◽  
Oxygen Uptake ◽  
Selection Procedure ◽  
Ex Situ ◽  
Global Database ◽  
Data Record ◽  
Consumption Rates ◽  
Meta Analyses

Abstract Sediment community oxygen consumption (SCOC) rates provide important information about biogeochemical processes in marine sediments and the activity of benthic microorganisms and fauna. Therefore, several databases of SCOC data have been compiled since the mid-1990s. However, these earlier databases contained much less data records and were not freely available. Additionally, the databases were not transparent in their selection procedure, so that other researchers could not assess the quality of the data. Here, we present the largest, best documented, and freely available database of SCOC data compiled to date. The database is comprised of 3,540 georeferenced SCOC records from 230 studies that were selected following the procedure for systematic reviews and meta-analyses. Each data record states whether the oxygen consumption was measured ex situ or in situ, as total oxygen uptake, diffusive or advective oxygen uptake, and which measurement device was used. The database will be curated and updated annually to secure and maintain an up-to-date global database of SCOC data.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition From SiH4/He/H2

1991 ◽  
Vol 235 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

Effect of NH3 Plasma Treatment on Etching of Ti During Ticl4-Based Tin CVD Processes

1998 ◽  
Vol 514 ◽  
Author(s):  
M. E. Gross ◽  
E. Coleman ◽  
K. Ohto
Keyword(s):  
Integrated Circuit ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Si Substrate ◽  
Barrier Films ◽  
Series Of Experiments ◽  
Pre Treatment ◽  
Initial Deposition ◽  
Ti Films

ABSTRACTIntegration of a TiCl4-based chemical vapor deposition (CVD) process for TiN barrier films with Ti underlayers for sub-micron integrated circuit metallization stacks exposes the Ti film to TiCl4 and NH3 adducts of TiCl4 that may etch the Ti in addition to depositing TiN. In this paper we report results of studies on the interactions of TiCl4 with ex situ PVD Ti films during the CVD TiN process. Deposition of TiN on Ti/SiO2/Si using a onestep 650°C process shows evidence of significant etching of the underlying Ti. A two-step process using a reduced TiCl4 flow for the initial deposition reduced the amount of etching but for Ti films over 200Å thick there was significant non-uniformity and peeling at the Ti/SiO2 interface. Pre-treatment of the Ti surface in situ with a 500W, 450 kHz NH3 plasma for 20–60 sec. leads to formation of TiN0.3, which shows a slight protective effect against etching. The same series of experiments with Ti deposited on Si reveals no etching, owing to reaction of the Ti with the Si substrate to form etch-resistant silicides. These results suggest that integration of a TiCl4-based CVD TiN process with an underlying Ti layer may be undesirable unless the surface of the Ti is protected against etching.

In-Situ Diagnostics of Diamond CVD

1988 ◽  
Vol 131 ◽  
Author(s):  
J. E. Butler ◽  
F. G. Celii ◽  
P. E. Pehrsson ◽  
H. -t. Wang ◽  
H. H. Nelson
Keyword(s):  
Chemical Vapor ◽  
Diamond Surface ◽  
Diamond Growth ◽  
Chemical Vapor Deposition Growth ◽  
Laser Absorption ◽  
Species Formation ◽  
Photon Ionization ◽  
Diode Laser Absorption

ABSTRACTThe deposition of diamond, a metastable crystalline form of carbon, from low pressure gases poses intriguing questions about the mechanisms of growth. Tunable IR Diode Laser Absorption Spectroscopy, Laser Multi-Photon Ionization Spectroscopy, and Laser Induced Fluorescence were used to characterize the gaseous environment in the Chemical Vapor Deposition growth of diamond films. The quality of the deposited material was examined by optical and SEM microscopies, and Raman, Auger, and XPS spectroscopies. When a reactant mixture of 0.5% methane in hydrogen, was passed across a hot Tungsten filament (2000 C), C2H2, C2H4, H and CH3 were detected above the growing diamond surface, and concentration limits for undetected species were determined. These results are discussed in terms of simple models for species formation and consumption, as well as the implications for the diamond growth mechanism.

Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing

2006 ◽  
Vol 527-529 ◽  
pp. 987-990 ◽  
Author(s):  
Tsunenobu Kimoto ◽  
H. Kawano ◽  
Masato Noborio ◽  
Jun Suda ◽  
Hiroyuki Matsunami
Keyword(s):  
Breakdown Strength ◽  
Oxide Thickness ◽  
Interface State ◽  
State Density ◽  
Interface Properties ◽  
Gate Oxides ◽  
Channel Mobility ◽  
Oxide Deposition ◽  
Mos Structures

Oxide deposition followed by high-temperature annealing in N2O has been investigated to improve the quality of 4H-SiC MOS structures. Annealing of deposited oxides in N2O at 1300oC significantly enhances the breakdown strength and decreases the interface state density to 3x1011 cm-2eV-1 at EC – 0.2 eV. As a result, high channel mobility of 34 cm2/Vs and 52 cm2/Vs has been attained for inversion-type MOSFETs fabricated on 4H-SiC(0001)Si and (000-1)C faces, respectively. The channel mobility shows a maximum when the increase of oxide thickness during N2O annealing is approximately 5 nm. A lateral RESURF MOSFET with gate oxides formed by the proposed process has blocked 1450 V and showed a low on-resistance of 75 mcm2, which is one of the best performances among lateral SiC MOSFETs reported.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition from SiH4/He/H2

1991 ◽  
Vol 236 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

AbstractSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

scholarly journals Evaluating Concrete Quality using Nondestructive In-situ Testing Methods

2019 ◽  
pp. 22-40
Author(s):  
Khalid Abdel Naser Abdel Rahim
Keyword(s):  
Concrete Strength ◽  
Ultrasonic Pulse Velocity ◽  
Ultrasonic Pulse ◽  
Pulse Velocity ◽  
Initial Surface ◽  
In Situ Testing ◽  
Surface Absorption ◽  
Concrete Quality

This manuscript investigate the quality of concrete using non-destructive in-situ testing.The in-situ testing is a process by which different test are carried out such as rebound hammer, ultrasonic pulse veloc-ity, initial surface absorption test and fig air, to determine thein-situ strength, durability and deterioration, air permeability, concrete quality control andperformance. Additionally, the quality of concrete was researched using test methods with experimental results. Moreover, this research has found that (1) the increase in w/c ra-tioleads to a decrease in compressive strength and ultrasonic pulse velocity. Thus, lower w/cratio gives a bet-ter concrete strength in terms of quality, (2) the quicker the ultrasonic pulse travels through concrete indicates that the concrete is denser, therefore, better quality, (3) the lower initial surface absorption value indicates a better concrete with respect to porosity and (4) the w/c ratio plays an important role in the strength and per-meability of concrete.

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