In-Situ Diagnostics of Diamond CVD

1988 ◽  
Vol 131 ◽  
Author(s):  
J. E. Butler ◽  
F. G. Celii ◽  
P. E. Pehrsson ◽  
H. -t. Wang ◽  
H. H. Nelson

ABSTRACTThe deposition of diamond, a metastable crystalline form of carbon, from low pressure gases poses intriguing questions about the mechanisms of growth. Tunable IR Diode Laser Absorption Spectroscopy, Laser Multi-Photon Ionization Spectroscopy, and Laser Induced Fluorescence were used to characterize the gaseous environment in the Chemical Vapor Deposition growth of diamond films. The quality of the deposited material was examined by optical and SEM microscopies, and Raman, Auger, and XPS spectroscopies. When a reactant mixture of 0.5% methane in hydrogen, was passed across a hot Tungsten filament (2000 C), C2H2, C2H4, H and CH3 were detected above the growing diamond surface, and concentration limits for undetected species were determined. These results are discussed in terms of simple models for species formation and consumption, as well as the implications for the diamond growth mechanism.

Carbon ◽  
2016 ◽  
Vol 98 ◽  
pp. 633-637 ◽  
Author(s):  
Lu Wang ◽  
Xiuyun Zhang ◽  
Feng Yan ◽  
Helen L.W. Chan ◽  
Feng Ding

2010 ◽  
Vol 10 (3) ◽  
pp. 639-646 ◽  
Author(s):  
Michael B. Frish ◽  
Richard T. Wainner ◽  
Matthew C. Laderer ◽  
B. David Green ◽  
Mark G. Allen

1994 ◽  
Vol 375 ◽  
Author(s):  
G. Ritter ◽  
B. Tillack ◽  
M. Weidner ◽  
F. G. Böbel ◽  
B. Hertel

AbstractChemical Vapor Deposition of Si1-x Gex – films on Si (100) and of polycrystalline Si1-x Gex, layers on SiO2 – coated substrates have been performed at a pressure of 200 Pa in the temperature range of 500°C – 800°C, correspondingly. To observe the growth process and to characterize the growing thin films at deposition conditions an optical reflection interferometer (PYRITIERS) has been used. Comparing the data obtained at growth temperature with ex- situ measurements by spectroscopic ellipsometry the temperature dependence of optical constants of SiGe films have been evaluated. The reflectivity measurements during the deposition process allow to study the quality of the heteroepitaxial film, even in the initial stage of epitaxial growth.


Sign in / Sign up

Export Citation Format

Share Document