Effect of NH3 Plasma Treatment on Etching of Ti During Ticl4-Based Tin CVD Processes

1998 ◽  
Vol 514 ◽  
Author(s):  
M. E. Gross ◽  
E. Coleman ◽  
K. Ohto
Keyword(s):  
Integrated Circuit ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Si Substrate ◽  
Barrier Films ◽  
Series Of Experiments ◽  
Pre Treatment ◽  
Initial Deposition ◽  
Ti Films

ABSTRACTIntegration of a TiCl4-based chemical vapor deposition (CVD) process for TiN barrier films with Ti underlayers for sub-micron integrated circuit metallization stacks exposes the Ti film to TiCl4 and NH3 adducts of TiCl4 that may etch the Ti in addition to depositing TiN. In this paper we report results of studies on the interactions of TiCl4 with ex situ PVD Ti films during the CVD TiN process. Deposition of TiN on Ti/SiO2/Si using a onestep 650°C process shows evidence of significant etching of the underlying Ti. A two-step process using a reduced TiCl4 flow for the initial deposition reduced the amount of etching but for Ti films over 200Å thick there was significant non-uniformity and peeling at the Ti/SiO2 interface. Pre-treatment of the Ti surface in situ with a 500W, 450 kHz NH3 plasma for 20–60 sec. leads to formation of TiN0.3, which shows a slight protective effect against etching. The same series of experiments with Ti deposited on Si reveals no etching, owing to reaction of the Ti with the Si substrate to form etch-resistant silicides. These results suggest that integration of a TiCl4-based CVD TiN process with an underlying Ti layer may be undesirable unless the surface of the Ti is protected against etching.

In-situ Growth and Growth Kinetics of Epitaxial (100) CoSi2 Layer on (100) Si by Reactive Chemical Vapor Deposition

2000 ◽  
Vol 611 ◽  
Author(s):  
Hwa Sung Rhee ◽  
Heui Seung Lee ◽  
Jong Ho Park ◽  
Byung Tae Ahn
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Growth ◽  
Si Substrate ◽  
Flat Interface ◽  
Initial Deposition ◽  
Kinetics Of

ABSTRACTUniform epitaxial CoSi2 layers have been grown in situ on a (100) Si substrate at temperatures near 600 °C by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η5-C5H5)(CO)2. The growth kinetics of an epitaxial CoSi2 layer on a Si (100) substrate was investigated at temperatures ranging from 575 to 650 °C. In initial deposition stage, platelike discrete CoSi2 spikes were nucleated along the <111> directions in (100) Si substrate with a twinned structure. The discrete CoSi2 plates with both {111} and (100) planes grew into an epitaxial layer with a flat interface on (100) Si. For epitaxial CoSi2 growth on (100) Si, the activation energy of the parabolic growth was found to be 2.80 eV. The growth rate seems to be controlled by the diffusion of Co through the CoSi2 layer.

Impact of In Situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

2022 ◽  
Author(s):  
Ding-Yuan Chen ◽  
Axel R Persson ◽  
Kai Hsin Wen ◽  
Daniel Sommer ◽  
Jan Gruenenpuett ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Untreated Sample ◽  
Pressure Chemical ◽  
Gan Hemts ◽  
Pre Treatment ◽  
The Impact

Abstract The impact on the performance of GaN HEMTs of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 minutes) were compared in terms of interface properties and device performance. A reduction of oxygen at the interface between SiN and epi-structure is detected by Scanning Transmission Electron Microscopy-Electron Energy Loss Spectroscopy measurements in the sample subjected to 10 minutes of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9 % (compared to 16% for the untreated sample), which is attributed to the reduction of oxygen at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 minutes significantly improves the current dispersion uniformity from 14.5 % to 1.9 %. The reduced trapping effects result in a high output power of 3.4 W/mm at 3 GHz (compared to 2.6 W/mm for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before low-pressure chemical vapor deposition of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.

In-Situ Characterization of Carbon Nanotube-Polystyrene Composite Deformation

2000 ◽  
Vol 6 (S2) ◽  
pp. 40-41
Author(s):  
D. Qian ◽  
E. C. Dickey ◽  
R. Andrews ◽  
T. Rantell ◽  
B. Safadi
Keyword(s):  
Carbon Nanotubes ◽  
Load Transfer ◽  
Electronic Materials ◽  
Composite Films ◽  
Chemical Vapor ◽  
Ex Situ ◽  
In Situ Tem ◽  
Multiwalled Carbon ◽  
Young’S Moduli

Carbon nanotubes (NTs) have novel electronic properties and exceptionally high Young's moduli on the order of TPa. so NTs have potential applications in advanced composite materials such as conductive polymers, electromagnetic-radio frequency interference (EMI/RFI) shielding material and opto-electronic materials. The utility of the nanotubes in composite applications depends strongly on the ability to disperse the NTs homogeneously throughout the matrix without destroying the integrity of the NTs. Furthermore, interfacial bonding between the NT and matrix is necessary to achieve load transfer across the interface, which is desirable for improving the mechanical properties of polymer composites.In this work, aligned multiwalled carbon nanotubes (MWNTs) produced by continuous chemical vapor deposition (CVD) (see Fig.l), were homogeneously dispersed in polystyrene (PS) matrices by a simple solution-evaporation method. Using this procedure, we made uniform MWNT-PS composite films ∼0.4mm thick for ex-situ mechanical tensile test and very thin films, ∼100nm, for in-situ TEM tests, as shown in Fig.2.

In situ and Ex situ Applications of Spectroscopic Ellipsometry

1993 ◽  
Vol 324 ◽  
Author(s):  
John A. Woollam ◽  
Blaine Johs ◽  
William A. McGahan ◽  
Paul G. Snyder ◽  
Jeffrey Hale ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Integrated Circuit ◽  
Ex Situ ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Multilayer Stacks ◽  
Deposition Control

AbstractWe briefly review the optics of ellipsometry, followed by discussions of a series of example applications of the technique including single films on a substrate; multilayer stacks common to silicon integrated circuit fabrication; flat panel display materials, and in situ semiconductor growth and deposition control.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition From SiH4/He/H2

1991 ◽  
Vol 235 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

Intrinsic Stress Measurements in CVD Diamond Films

1999 ◽  
Vol 593 ◽  
Author(s):  
Jin Yu ◽  
J.G. Kim ◽  
Y. C. Sohn ◽  
Y. S. Lee
Keyword(s):  
Film Thickness ◽  
Diamond Films ◽  
Strain Analysis ◽  
Chemical Vapor ◽  
Film Stress ◽  
Intrinsic Stress ◽  
Ex Situ ◽  
Chemical Vapor Deposition Method ◽  
Si Substrate ◽  
Curvature Measurements

ABSTRACTDiamond films were grown over Si substrate at 1253K by the hot filament chemical vapor deposition method using CH4/H2 gas mixture, and intrinsic stresses in the film were deduced from the ex-situ curvature measurements. In order to account for the creep deformation of the Si substrate, an elastic/plastic stress and strain analysis were conducted. Results showed that intrinsic stresses were generally several times larger than the average film stresses and always positive increasing with the film thickness. For the film thickness larger than 10μm, stress relaxation by creep of the substrate became significant, and must be considered for the accurate assessment of the film stress in diamond. Later, an analysis based on the grain growth accounted for the development of intrinsic stresses reasonably well

In-Situ Observation of Chemical Vapor Deposition of Thin Sige Films by Optical Reflection Interferometry

1994 ◽  
Vol 375 ◽  
Author(s):  
G. Ritter ◽  
B. Tillack ◽  
M. Weidner ◽  
F. G. Böbel ◽  
B. Hertel
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Ex Situ ◽  
In Situ Observation ◽  
Optical Reflection ◽  
Initial Stage

AbstractChemical Vapor Deposition of Si1-x Gex – films on Si (100) and of polycrystalline Si1-x Gex, layers on SiO2 – coated substrates have been performed at a pressure of 200 Pa in the temperature range of 500°C – 800°C, correspondingly. To observe the growth process and to characterize the growing thin films at deposition conditions an optical reflection interferometer (PYRITIERS) has been used. Comparing the data obtained at growth temperature with ex- situ measurements by spectroscopic ellipsometry the temperature dependence of optical constants of SiGe films have been evaluated. The reflectivity measurements during the deposition process allow to study the quality of the heteroepitaxial film, even in the initial stage of epitaxial growth.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition from SiH4/He/H2

1991 ◽  
Vol 236 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

AbstractSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

scholarly journals In Situ Measurement of Carbon Nanotube Growth Kinetics in a Rapid Thermal Chemical Vapor Deposition Reactor With Multizone Infrared Heating

2020 ◽  
Vol 8 (1) ◽  
Author(s):  
Moataz Abdulhafez ◽  
Jaegeun Lee ◽  
Mostafa Bedewy
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Infrared Heating ◽  
Ex Situ ◽  
Depth Of Field ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth

Abstract Understanding and controlling the growth of vertically aligned carbon nanotube (VACNT) forests by chemical vapor deposition (CVD) is essential for unlocking their potential as candidate materials for next generation energy and mass transport devices. These advances in CNT manufacturing require developing in situ characterization techniques capable of interrogating how CNTs grow, interact, and self-assemble. Here we present a technique for real-time monitoring of VACNT forest height kinetics applied to a unique custom designed rapid thermal processing (RTP) reactor for CVD of VACNTs. While the integration of multiple infrared heating lamps enables creating designed spatiotemporal temperature profiles inside the reactor, they pose challenges for in situ measurements. Hence, our approach relies on contrast-adjusted videography and image processing, combined with calibration using 3D optical microscopy with large depth-of-field. Our work enables reliably measuring VACNT growth rates and catalytic lifetimes, which are not possible to measure using ex situ methods.

Surface Cleaning Prior to Formation of Si/SiO2 Interfaces by Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD)

1992 ◽  
Vol 259 ◽  
Author(s):  
H. H. Lamb ◽  
S. Kalem ◽  
S. Bedge ◽  
T. Yasuda ◽  
Y. Ma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Surface Cleaning ◽  
Ex Situ ◽  
Dangling Bond ◽  
Remote Plasma ◽  
Carbon Contamination

ABSTRACTEx situ UV/O2 cleaning prior to SiO2 deposition by RPECVD results in an SiO2/Si interface with mid-gap Dit values 2-5 times higher than interfaces formed by in situ exposure of HF-etched wafers to plasma-generated atomic O. In situ exposures to plasma-generated atomic H and atomic O are each effective at removing carbon contamination acquired by the UV/O2 cleaned wafers during transfer and introduction to the RPECVD chamber. However, in situ exposure of the photochemical oxide layer to atomic O results in higher mid-gap Dit values, and in situ exposure to atomic H results in creation of dangling bond defects (Pb centers).

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