Epitaxial Growth of NiSi2 and CoSi2 on Laterally Confined Silicon by Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
H.F. Hsu ◽  
J.J. Chu ◽  
L.J. Chen
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metal Films ◽  
Electron Beam Evaporation ◽  
Two Dimensional ◽  
Geometrical Configuration ◽  
Lateral Confinement ◽  
Stress Levels

ABSTRACTEpitaxial growth of NiSi2 and CoSi2 on silicon inside miniature oxide openings by rapid thermal annealing has been studied. Effects of lateral confinement, including two-dimensional and linear oxide openings, as well as deposition methods on the growth of NiSi2 and CoSi2 on silicon were investigated. Vast difference found in the behaviors of the growth of epitaxy inside oxide openings between samples with the metal films deposited by electron beam evaporation and sputtering are attributed to the differences in the geometrical configuration of the films and stress levels as well as surface cleanliness.

scholarly journals Formation of L10-ordered CoPt during interdiffusion of electron-beam-deposited Pt/Co bilayer thin films on Si/SiO2 substrates by rapid thermal annealing

2020 ◽  
Vol 7 (6) ◽  
pp. 066101 ◽  
Author(s):  
Ryo Toyama ◽  
Shiro Kawachi ◽  
Soshi Iimura ◽  
Jun-ichi Yamaura ◽  
Youichi Murakami ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Ni-catalysed WO3 nanostructures grown by electron beam rapid thermal annealing for NO2 gas sensing

2015 ◽  
Vol 17 (7) ◽  
Author(s):  
Gopalakrishnan Chandrasekaran ◽  
Anuraj Sundararaj ◽  
Helen Annal Therese ◽  
K. Jeganathan
Keyword(s):  
Electron Beam ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Gas Sensing ◽  
Wo3 Nanostructures

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

2004 ◽  
Vol 03 (04n05) ◽  
pp. 425-430 ◽  
Author(s):  
A. MARKWITZ ◽  
S. JOHNSON ◽  
M. RUDOLPHI ◽  
H. BAUMANN
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Implantation Fluence

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

Change of surface structure of thin silicon nitride layers during electron beam rapid thermal annealing

1994 ◽  
Vol 64 (20) ◽  
pp. 2652-2654 ◽  
Author(s):  
A. Markwitz ◽  
H. Baumann ◽  
E. F. Krimmel ◽  
K. Bethge ◽  
W. Grill
Keyword(s):  
Electron Beam ◽  
Silicon Nitride ◽  
Surface Structure ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Silicon ◽  
Nitride Layers

Epitaxial Growth ofTiSi2(C49) on (001)Si by Rapid Thermal Annealing

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6475-6480 ◽  
Author(s):  
Li-Ming Wang ◽  
Shinn-Tyan Wu
Keyword(s):  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing
Sign in / Sign up

Export Citation Format

Share Document