Incorporation and Diffusion of P-Type Dopants for Metal Organic Vapor Phase Epitaxy

1988 ◽  
Vol 144 ◽  
Author(s):  
M. A. Tischler ◽  
T. F. Kuech
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Electrical Characterization ◽  
Bipolar Transistors ◽  
Organic Vapor ◽  
Dopant Profile ◽  
Metal Organic ◽  
Initial Placement ◽  
P Type ◽  
And Diffusion

ABSTRACTThe control of p-type dopants is very important in producing high performance minority carrier devices such as heterojunction bipolar transistors (HBT) and lasers. In this study, an electrical characterization technique is described which is very sensitive to the p-type dopant profile in a heterojunction. Both the placement of the dopant, i.e. the as-grown profile, and thermal diffusion effects have been investigated. The factors which control the initial placement and subsequent diffusion of the dopant species have been determined and used to produce device-quality GaAs/Al0.30Ga0.70As p+/n heterojunctions.

Comparative Study on Reliability of InP/InGaAs Heterojunction Bipolar Transistors with Highly Zn- and C-Doped Base Layers

2009 ◽  
Vol 1195 ◽  
Author(s):  
Atsushi Koizumi ◽  
Kazuki Oshitanai ◽  
Jaesung Lee ◽  
Kazuo Uchida ◽  
Shinji Nozaki
Keyword(s):  
Raman Spectroscopy ◽  
Heterojunction Bipolar Transistors ◽  
Stress Test ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Photoluminescence Intensity ◽  
Initial Current ◽  
Carbon Doped ◽  
Organic Vapor ◽  
Metal Organic

AbstractThe reliability of InP/InGaAs heterojunction bipolar transistors (HBTs) with highly carbon-doped and zinc-doped InGaAs base layers grown by metal-organic vapor phase epitaxy has been investigated. The Raman spectroscopy reveals that the post-growth annealing for the carbon-doped InGaAs base improves the crystallinity to become as good as that of the zinc-doped InGaAs base. However, the photoluminescence intensity remains lower than that of the zinc-doped InGaAs even after the post-growth annealing. The current gains of the carbon- and zinc-doped base InP/InGaAs HBTs are 63 and 75, respectively, and they are affected by the base crystallinity. After the 15-min current stress test, the current gains decreased by 40 and 3% from the initial current gains for zinc- and carbon-doped base HBTs, respectively, are observed. These results indicate that the carbon-doped base HBT is much more reliable than that of zinc-doped base HBT, though it has a lower current gain.

Correlation between Photoreflectance Spectra and Electrical Characteristics of InP/GaAsSb Double Heterojunction Bipolar Transistors

2004 ◽  
Vol 829 ◽  
Author(s):  
Hiroki Sugiyama ◽  
Yasuhiro Oda ◽  
Haruki Yokoyama ◽  
Takashi Kobayashi ◽  
Masahiro Uchida ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
High Concentration ◽  
Organic Vapor ◽  
Double Heterojunction ◽  
Metal Organic ◽  
Emitter Region ◽  
Recombination Centers ◽  
Recombination Current

ABSTRACTWe report a photoreflectance (PR) characterization of InP/GaAsSb double-heterojunction bipolar transistor (DHBT) epitaxial wafers grown by metal-organic vapor-phase epitaxy (MOVPE). The origin of the Franz-Keldysh oscillations (FKOs) in the PR spectra was identified by step etching of the samples. FKOs from the InP emitter region were observed in the wafer with low recombination forward current at the emitter-base (E/B) heterojunction. In contrast, they did not appear when recombination current was dominant. The absence of the FKOs from the emitter indicates the high concentration of the recombination centers at the E/B heterojunction. We have also measured PR spectra from InAlP/GaAsSb/InP DHBT wafers. Pronounced FKOs from InAlP emitter reflect the suppression of recombination at E/B heterojunctions.

Electrical Characterization of Defect States in Local Conductivity Domains in ZnO:N,As Layers

2006 ◽  
Vol 957 ◽  
Author(s):  
Andre Krtschil ◽  
Armin Dadgar ◽  
Annette Diez ◽  
Alois Krost
Keyword(s):  
Energy Levels ◽  
Electrical Characterization ◽  
Defect States ◽  
Organic Vapor ◽  
Different Temperatures ◽  
Metal Organic ◽  
Local Conductivity ◽  
P Type ◽  
Scanning Surface Potential Microscopy

ABSTRACTP- and n-type conductivity domains in dual-doped ZnO:As+N layers grown by metal organic vapor phase epitaxy on GaN/sapphire templates were electrically microcharacterized by scanning capacitance (SCM) and scanning surface potential microscopy (SSPM) techniques with respect to their defect states. The p-type domains were found to be dominated by two acceptors with thermal activation energies of about 80 and 270 meV as observed by transient SCM scans at different temperatures. Optically excited SSPM scans revealed defect-to-band-transitions at 400, 459, and 505 nm omnipresent in both domain types as well as a shallower transition at 377 nm exclusively in the p-type regions. According to the similar energy levels the optical transitions at 377 and 400 nm are assigned to acceptor states, whereby the 80meV-acceptor is probably responsible for the conversion from n- to p-type in the domains.

Electrical characterization of defect states in local conductivity domains in ZnO:N,As layers

2007 ◽  
Vol 22 (7) ◽  
pp. 1775-1778 ◽  
Author(s):  
Andre Krtschil ◽  
Armin Dadgar ◽  
Annette Diez ◽  
Alois Krost
Keyword(s):  
Energy Levels ◽  
Electrical Characterization ◽  
Defect States ◽  
Organic Vapor ◽  
Different Temperatures ◽  
Metal Organic ◽  
Local Conductivity ◽  
P Type ◽  
Scanning Surface Potential Microscopy

P- and n-type conductivity domains in dual-doped ZnO:As+N layers grown by metal organic vapor phase epitaxy on GaN–sapphire templates were electrically microcharacterized by scanning capacitance microscopy (SCM) and scanning surface potential microscopy (SSPM) techniques with respect to their defect states. The p-type domains were found to be dominated by two acceptors with thermal activation energies of about 80 and 270 meV, as observed by transient SCM scans at different temperatures. Optically excited SSPM scans revealed defect-to-band transitions at 400, 459, and 505 nm omnipresent in both domain types as well as a shallower transition at 377 nm exclusively in the p-type regions. According to the similar energy levels, the optical transitions at 377 and 400 nm are assigned to acceptor states, whereby the 80-meV acceptor is probably responsible for the conversion from n- to p-type regions in the domains.

Growth of Heterojunction Bipolar Transistors by Metalorganic Molecular Beam Epitaxy

1993 ◽  
Vol 300 ◽  
Author(s):  
Cammy R. Abernathy
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Lattice Matching ◽  
Background Impurity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type ◽  
Trimethylamine Alane

ABSTRACTHeterojunction bipolar transistors (HBTs) are becoming increasingly important for highspeed electronic applications. This paper will discuss how the unique growth chemistry of metalorganic molecular beam epitaxy (MOMBE) can be used to produce high performance HBTs. For example, it has been well documented that MOMBE's ability to grow heavily doped, well-confined layers of either n- or p-type is a significant advantage for this device. This feature arises primarily from the ability to use gaseous dopant sources in the absence of interfacial gas boundary layers. While this is an advantage for doping, it can be a disadvantage in other areas such as AlGaAs purity or InGaP lattice matching. This paper will discuss how these difficulties can be overcome through the use of novel Al or Ga precursors thus allowing deposition of high quality GaAs-based HBTs. By using trimethylamine alane (TMAA), background impurity concentrations can be reduced substantially. Further improvements in purity require cleaner Ga precursors or alternatively novel Ga substitutes. The resulting reduction in compensation allows for the use of lower dopant concentrations in the AlGaAs thus producing significant improvement in the leakage behavior of the base-emitter junction. Even further improvement can be achieved through the use of InGaP. Using novel Ga precursors, such as tri-isobutylgallium (TIBG), the problems associated with the sensitivity of composition to growth temperature are greatly reduced, allowing for the reproducible deposition of devices containing InGaP emitter layers.

scholarly journals Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Micromachines ◽  
2018 ◽  
Vol 9 (8) ◽  
pp. 412 ◽  
Author(s):  
Evans Bernardin ◽  
Christopher Frewin ◽  
Richard Everly ◽  
Jawad Ul Hassan ◽  
Stephen Saddow
Keyword(s):  
Silicon Carbide ◽  
High Performance ◽  
Electrical Characterization ◽  
Electrode Impedance ◽  
Voltage Range ◽  
Promising Solution ◽  
Multiple Materials ◽  
Diode Behavior ◽  
Materials Used ◽  
P Type

Intracortical neural interfaces (INI) have made impressive progress in recent years but still display questionable long-term reliability. Here, we report on the development and characterization of highly resilient monolithic silicon carbide (SiC) neural devices. SiC is a physically robust, biocompatible, and chemically inert semiconductor. The device support was micromachined from p-type SiC with conductors created from n-type SiC, simultaneously providing electrical isolation through the resulting p-n junction. Electrodes possessed geometric surface area (GSA) varying from 496 to 500 K μm2. Electrical characterization showed high-performance p-n diode behavior, with typical turn-on voltages of ~2.3 V and reverse bias leakage below 1 nArms. Current leakage between adjacent electrodes was ~7.5 nArms over a voltage range of −50 V to 50 V. The devices interacted electrochemically with a purely capacitive relationship at frequencies less than 10 kHz. Electrode impedance ranged from 675 ± 130 kΩ (GSA = 496 µm2) to 46.5 ± 4.80 kΩ (GSA = 500 K µm2). Since the all-SiC devices rely on the integration of only robust and highly compatible SiC material, they offer a promising solution to probe delamination and biological rejection associated with the use of multiple materials used in many current INI devices.

Sign in / Sign up

Export Citation Format

Share Document