Comparison of Low Vapor Pressure Organoarsenic Compounds for Movpe Growth of GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
R.M. Lum ◽  
J.K. Kiingert
Keyword(s):  
Growth Rate ◽  
Thermal Decomposition ◽  
High Pressure ◽  
Optical Properties ◽  
Vapor Pressure ◽  
Film Growth ◽  
Methyl Ethyl ◽  
Electrical And Optical Properties ◽  
Movpe Growth ◽  
Decomposition Properties

ABSTRACTWe have investigated the use of various alkylarsine compounds as alternatives to arsine in the metalorganic vapor phase epitaxy (MOVPE) of GaAs. These As-precursors, which include homologues of methyl, ethyl and butyl-based compounds, are typically low vapor pressure liquids and thus much safer to handle than arsine, which is a toxic high pressure gas. To enable a direct comparison of the alkylarsine and arsine sources, measurement of their growth and thermal decomposition properties were obtained in the same reactor under identical conditions. The composition and purity of the precursor compound was observed to affect both the film growth rate and its electrical and optical properties.

The high pressure phases β- and δ-V2O5: structure refinement, electrical and optical properties, thermal stability

2013 ◽  
Vol 33 (2) ◽  
pp. 399-408 ◽  
Author(s):  
Igor P. Zibrov ◽  
Vladimir P. Filonenko ◽  
Sergey G. Lyapin ◽  
Vladimir A. Sidorov
Keyword(s):  
Thermal Stability ◽  
High Pressure ◽  
Optical Properties ◽  
Structure Refinement ◽  
Electrical And Optical Properties

Better control over the onset of microcrystallinity in fast-growing silicon network

2004 ◽  
Vol 19 (9) ◽  
pp. 2597-2603 ◽  
Author(s):  
Sumita Mukhopadhyay ◽  
Debajyoti Das ◽  
Swati Ray
Keyword(s):  
Growth Rate ◽  
High Pressure ◽  
Deposition Rate ◽  
Film Growth ◽  
Electrical Power ◽  
Rf Plasma ◽  
High Deposition Rate ◽  
Deposition Parameter ◽  
Fast Growing ◽  
Film Growth Rate

In view of obtaining a Si:H network at the onset of microcrystallinity at a high deposition rate, we have adopted an intelligent approach to find out a tricky plasma condition in radio frequency (rf) plasma-enhanced chemical vapordeposition that provides a better control on growth introducing retarded microcrystallization. The deposition parameter includes a combination of high electrical power applied to the (SiH4+H2)-plasma and high gas pressure in thereaction chamber. High rf power increases the number density of film-forming precursors as well as atomic H density in the plasma, which helps to increase thefilm deposition rate and to promote microcrystallinity, respectively. In addition,high pressure helps not only to increase the film-growth rate by producing a dense plasma but also retards the microcrystallization process by increasing significantlythe gas phase collision frequency and consequently reducing the effective reactivityof atomic H on the surface of a fast-growing Si:H network. A combination of high-power and high-pressure plasma conditions provides a reasonably wide rangeof H2 dilution to work with and better control in producing a Si:H network at theonset of microcrystallinity, while increasing the film-growth rate.

High-Quality InGaAsP Crystals Grown by MOVPE Using TBA and TBP

1990 ◽  
Vol 216 ◽  
Author(s):  
A. Kuramata ◽  
S. Yasmazaki ◽  
K. Nakajima
Keyword(s):  
Optical Properties ◽  
Growth Conditions ◽  
Band Edge Emission ◽  
Photoluminescence Spectra ◽  
Edge Emission ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Group V ◽  
Movpe Growth ◽  
The Relationship

ABSTRACTTBA and TBP are attractive candidates for group V sources for MOVPE growth from the viewpoint of safety. We studied how the composition of InGaAsP crystals depends on growth conditions, and investigated its electrical and optical properties. The relationship between group V sources and crystals indicates that TBA and TBP decompose into AsH and PH. Since there is no carbon in AsH and PH, carbon contamination in the crystals is expected to be small. Carrier concentrations ranged from 5×1014 cm−3 to 1.5×1015 cm−3. Photoluminescence spectra at 4.2K showed strong band-edge emission with no acceptor-related emission. Based on the electrical and optical properties of the crystals, we conclude that high-quality InGaAsP crystals can be grown using TBA and TBP.

Chemical Beam Epitaxial Growth of GaAs Epilayer on GaAs (100) Substrate Using Unprecracked Arsine and Trimethylgallium

1991 ◽  
Vol 240 ◽  
Author(s):  
Seong-Ju Park ◽  
Jae-Ki Sim ◽  
Jeong-Rae Ro ◽  
Byueng-Su Yoo ◽  
Kyung-Ho Park ◽  
...  
Keyword(s):  
Growth Rate ◽  
Optical Properties ◽  
Hole Concentration ◽  
Impurity Content ◽  
Chemical Beam Epitaxy ◽  
Hydrogen Atoms ◽  
Carbon Incorporation ◽  
Electrical And Optical Properties ◽  
Significant Drop ◽  
P Type

ABSTRACTWe present preliminary results aimed at investigating the effects of unprecracked arsine and trimethylgallium on the CBE (chemical beam epitaxy) growth of GaAs epilayers. We find that the growth rate rises linearly as the V/III ratio is increased when TMGa and arsine are used. All of the runs produced p-type material mainly due to carbon incorporation with the hole concentration typically of 1017 cm−3. The impurity content of the layers was found to depend distinctly on the pressure of TMGa. The significant drop in hole concentration is due in part to the hydrogen atoms generated from decomposed AsH3 which then aids in the removal of CH3 radicals on the surface. As a result of using unprecracked arsine for growth of the GaAs epilayers, we measure substantial improvements in their electrical and optical properties.

scholarly journals High-pressure polyol synthesis of ultrathin silver nanowires: Electrical and optical properties

APL Materials ◽  
2013 ◽  
Vol 1 (4) ◽  
pp. 042118 ◽  
Author(s):  
Eun-Jong Lee ◽  
Min-Hwa Chang ◽  
Youn-Soo Kim ◽  
Jin-Yeol Kim
Keyword(s):  
High Pressure ◽  
Optical Properties ◽  
Silver Nanowires ◽  
Polyol Synthesis ◽  
Electrical And Optical Properties

scholarly journals Single crystal growth of bulk InGaZnO4 and analysis of its intrinsic transport properties

CrystEngComm ◽  
2019 ◽  
Vol 21 (19) ◽  
pp. 2985-2993 ◽  
Author(s):  
Yusuke Tanaka ◽  
Kazuhiro Wada ◽  
Yuki Kobayashi ◽  
Takenori Fujii ◽  
Saleem J. Denholme ◽  
...  
Keyword(s):  
High Pressure ◽  
Optical Properties ◽  
Crystal Growth ◽  
Single Crystals ◽  
Single Crystal Growth ◽  
Floating Zone ◽  
Zone Method ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Floating Zone Method

Large, high-quality InGaZnO4 single crystals grown by high-pressure optical floating zone method and its electrical and optical properties.

The Growth Mechanisms of GaSb Epitaxial Film by MOCVD

1990 ◽  
Vol 216 ◽  
Author(s):  
H. Y. Ueng ◽  
S. M. Chen ◽  
Y. K. Su ◽  
F. S. Juang
Keyword(s):  
Growth Rate ◽  
Optical Properties ◽  
Reaction Mechanism ◽  
Substrate Temperature ◽  
Epitaxial Film ◽  
Hole Concentration ◽  
Growth Mechanisms ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Growth Reaction

ABSTRACTThe growth reaction mechanism was experimentally investigated for TEGa and TMSb used for MOCVD GaSb epitaxial growth. The variations of growth rate, substrate temperature, the V/III ratio and the mole-fraction of III and V source gases, were detailly considered and investigated with regard to their effect on electrical and optical properties were measured during the epitaxial process. The experimental results were used to provide an inspection on defects interaction mechanisms and on the type of conductivity. Based on the investigation of growth mechanism, at 470°, a high quality GaSb epitaxial film 1 with 3 mobility, 634 cm2/V*sec and low hole concentration, 1.67x1016 cm−2 was obtained.

Effect of high pressure on structural, electrical, and optical properties of graphene-like zinc oxide (g-ZnO) structure

2022 ◽  
Vol 142 ◽  
pp. 106465
Author(s):  
Muhammad Azhar Nazir ◽  
Tariq Mahmood ◽  
Naeem Akhtar ◽  
Kashif Hussain ◽  
Waheed S. Khan ◽  
...  
Keyword(s):  
High Pressure ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Electrical And Optical Properties
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