The Growth Mechanisms of GaSb Epitaxial Film by MOCVD

1990 ◽  
Vol 216 ◽  
Author(s):  
H. Y. Ueng ◽  
S. M. Chen ◽  
Y. K. Su ◽  
F. S. Juang
Keyword(s):  
Growth Rate ◽  
Optical Properties ◽  
Reaction Mechanism ◽  
Substrate Temperature ◽  
Epitaxial Film ◽  
Hole Concentration ◽  
Growth Mechanisms ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Growth Reaction

ABSTRACTThe growth reaction mechanism was experimentally investigated for TEGa and TMSb used for MOCVD GaSb epitaxial growth. The variations of growth rate, substrate temperature, the V/III ratio and the mole-fraction of III and V source gases, were detailly considered and investigated with regard to their effect on electrical and optical properties were measured during the epitaxial process. The experimental results were used to provide an inspection on defects interaction mechanisms and on the type of conductivity. Based on the investigation of growth mechanism, at 470°, a high quality GaSb epitaxial film 1 with 3 mobility, 634 cm2/V*sec and low hole concentration, 1.67x1016 cm−2 was obtained.

Chemical Beam Epitaxial Growth of GaAs Epilayer on GaAs (100) Substrate Using Unprecracked Arsine and Trimethylgallium

1991 ◽  
Vol 240 ◽  
Author(s):  
Seong-Ju Park ◽  
Jae-Ki Sim ◽  
Jeong-Rae Ro ◽  
Byueng-Su Yoo ◽  
Kyung-Ho Park ◽  
...  
Keyword(s):  
Growth Rate ◽  
Optical Properties ◽  
Hole Concentration ◽  
Impurity Content ◽  
Chemical Beam Epitaxy ◽  
Hydrogen Atoms ◽  
Carbon Incorporation ◽  
Electrical And Optical Properties ◽  
Significant Drop ◽  
P Type

ABSTRACTWe present preliminary results aimed at investigating the effects of unprecracked arsine and trimethylgallium on the CBE (chemical beam epitaxy) growth of GaAs epilayers. We find that the growth rate rises linearly as the V/III ratio is increased when TMGa and arsine are used. All of the runs produced p-type material mainly due to carbon incorporation with the hole concentration typically of 1017 cm−3. The impurity content of the layers was found to depend distinctly on the pressure of TMGa. The significant drop in hole concentration is due in part to the hydrogen atoms generated from decomposed AsH3 which then aids in the removal of CH3 radicals on the surface. As a result of using unprecracked arsine for growth of the GaAs epilayers, we measure substantial improvements in their electrical and optical properties.

Dependence of electrical and optical properties of ZnO films on substrate temperature

2001 ◽  
Vol 4 (6) ◽  
pp. 617-620 ◽  
Author(s):  
X.L. Xu ◽  
S.P. Lau ◽  
J.S. Chen ◽  
Z. Sun ◽  
B.K. Tay ◽  
...  
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Zno Films ◽  
Electrical And Optical Properties

scholarly journals Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Partial Pressures ◽  
Effect Of Oxygen ◽  
Parameter Dependent

Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4and Ag2Cu2O3phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K.

Impact of substrate temperature on the microstructure, electrical and optical properties of sputtered nanoparticle V2O5 thin films

Vacuum ◽  
2010 ◽  
Vol 85 (2) ◽  
pp. 145-150 ◽  
Author(s):  
Zhenfei Luo ◽  
Zhiming Wu ◽  
Xiangdong Xu ◽  
Mingjun Du ◽  
Tao Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Electrical And Optical Properties ◽  
V2o5 Thin Films

Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess

2003 ◽  
Vol 798 ◽  
Author(s):  
D. J. As ◽  
D. G. Pacheco-Salazar ◽  
S. Potthast ◽  
K. Lischka
Keyword(s):  
Optical Properties ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Growth Conditions ◽  
Rf Plasma ◽  
Electrical And Optical Properties ◽  
Carbon Doped ◽  
Cubic Gan ◽  
Hall Effect Measurements ◽  
P Type

ABSTRACTP-type doping of cubic GaN by carbon is reported with maximum hole concentration of 2 6.1×1018cm-3and hole mobility of 23.5 cm /Vs at room temperature, respectively. The cubic GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) under Ga-rich growth conditions on a semiinsulating GaAs (001) substrate (3 inches wafer). E-beam evaporation of a graphite rode with an C-flux of 1×1012cm-2s-1was used for C-doping of the c-GaN. Optical microscopy, Hall-effect measurements and photoluminescence were performed to investigate the morphological, electrical and optical properties of cubic GaN:C. Under Ga-rich growth conditions most part of the carbon atoms were incorporated substitutially on N-site giving p-type conductivity. Our results verify that effective p-type doping of c-GaN can be achieved under extrem Ga excess.

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