CuCl: Electrical and optical properties at high pressure at temperatures from 400 °C to liquid-nitrogen conditions

1982 ◽  
Vol 26 (8) ◽  
pp. 4140-4145 ◽  
Author(s):  
G. C. Vezzoli
2013 ◽  
Vol 33 (2) ◽  
pp. 399-408 ◽  
Author(s):  
Igor P. Zibrov ◽  
Vladimir P. Filonenko ◽  
Sergey G. Lyapin ◽  
Vladimir A. Sidorov

1988 ◽  
Vol 144 ◽  
Author(s):  
R.M. Lum ◽  
J.K. Kiingert

ABSTRACTWe have investigated the use of various alkylarsine compounds as alternatives to arsine in the metalorganic vapor phase epitaxy (MOVPE) of GaAs. These As-precursors, which include homologues of methyl, ethyl and butyl-based compounds, are typically low vapor pressure liquids and thus much safer to handle than arsine, which is a toxic high pressure gas. To enable a direct comparison of the alkylarsine and arsine sources, measurement of their growth and thermal decomposition properties were obtained in the same reactor under identical conditions. The composition and purity of the precursor compound was observed to affect both the film growth rate and its electrical and optical properties.


APL Materials ◽  
2013 ◽  
Vol 1 (4) ◽  
pp. 042118 ◽  
Author(s):  
Eun-Jong Lee ◽  
Min-Hwa Chang ◽  
Youn-Soo Kim ◽  
Jin-Yeol Kim

CrystEngComm ◽  
2019 ◽  
Vol 21 (19) ◽  
pp. 2985-2993 ◽  
Author(s):  
Yusuke Tanaka ◽  
Kazuhiro Wada ◽  
Yuki Kobayashi ◽  
Takenori Fujii ◽  
Saleem J. Denholme ◽  
...  

Large, high-quality InGaZnO4 single crystals grown by high-pressure optical floating zone method and its electrical and optical properties.


2022 ◽  
Vol 142 ◽  
pp. 106465
Author(s):  
Muhammad Azhar Nazir ◽  
Tariq Mahmood ◽  
Naeem Akhtar ◽  
Kashif Hussain ◽  
Waheed S. Khan ◽  
...  

1986 ◽  
Vol 14 (4) ◽  
pp. 306-318 ◽  
Author(s):  
H. Poisel ◽  
F. J. Landers ◽  
P. HOB ◽  
U. H. Bauder

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe

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