Molecular Beam Epitaxial Growth and Characterization of GaAs on Sapphire and Silicon-on-Sapphire Substrates

1988 ◽  
Vol 144 ◽  
Author(s):  
T. P. Humphreys ◽  
C. J. Miner ◽  
N. R. Parikh ◽  
K. Das ◽  
M. K. Summerville ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Optical Analysis ◽  
Molecular Beam Epitaxial ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Current Voltage ◽  
Semiconductor Contacts ◽  
Molecular Beam Epitaxial Growth

ABSTRACTEpitaxial GaAs layers have been grown by molecular beam epitaxy on (1012) sapphire and silicon-on-sapphire substrates. The grown layers were characterized by optical and transmission electron microscopy; Rutherford backscattering/channeling of 2.1 MeV He+ ions; Raman spectroscopy; Hall mobility measurements; photoluminescence spectroscopy and current-voltage measurements from metal-semiconductor contacts. The extensive microstructural, electrical and optical analysis of the GaAs layers indicates that the films deposited on silicon-on-sapphire are superior to those grown directly on (1012) sapphire substrates.

Molecular Beam Epitaxial Growth of Cdl-xznxTe Matched to HgCdTe Alloys

1986 ◽  
Vol 90 ◽  
Author(s):  
N. Magnea ◽  
F. Dal'bo ◽  
J. L. Pautrat ◽  
A. Million ◽  
L. Di Cioccio ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Bulk Material ◽  
Strained Layers ◽  
Molecular Beam Epitaxial ◽  
Transmission Electron ◽  
Molecular Beam Epitaxial Growth ◽  
Thick Layers

ABSTRACTCD1−xZnxTe alloys of various composition have been grown by the Molecular Beam Epitaxy Technique and characterized by Transmission Electron Microscopy. C(V) measurements and photoluminescence spectroscopy techniques. The quality of the thick layers is comparable to that of bulk material. Thin strained layers have also been grown whose interfaces are structurally good. The recombination within a CdTe well confined between Cd1−xZnxTe barriers is dominated by intrinsic processes.

Molecular Beam Epitaxial Growth of Gaas on Silicon with Buried Implanted Oxides

1987 ◽  
Vol 107 ◽  
Author(s):  
K. Das ◽  
T.P. Humphreys ◽  
J.B. Posthill ◽  
N. Parikh ◽  
J. Tarn ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Antiphase Domain ◽  
Molecular Beam Epitaxial ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
First Results ◽  
Direct Growth ◽  
Molecular Beam Epitaxial Growth ◽  
Microscopy Techniques

AbstractWe report the first results of direct growth of GaAs by molecular beam epitaxy on nominally (100) oriented silicon with buried implanted oxides. Rutherford backscattering and transmission electron microscopy techniques have been used to characterize these layers. The formation of hillocks and a uniform layer of GaAs in the intervening regions between hillocks have been observed. Microtwins, dislocations and antiphase domain boundaries are the predominant defects observed in these layers.

Growth and crystallographic characterization of molecular beam epitaxial WO3 and MoO3/WO3 thin films on sapphire substrates

2016 ◽  
Vol 381 ◽  
pp. 32-35 ◽  
Author(s):  
Mitsuaki Yano ◽  
Kazuto Koike ◽  
Masayuki Matsuo ◽  
Takayuki Murayama ◽  
Yoshiyuki Harada ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Sapphire Substrates ◽  
Wo3 Thin Films

Molecular beam epitaxial growth and characterization of CoAl on AlAs/GaAs

1991 ◽  
Vol 59 (24) ◽  
pp. 3115-3117 ◽  
Author(s):  
M. Tanaka ◽  
H. Sakakibara ◽  
T. Nishinaga
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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