Structural Studies of Sputter-Deposited MoS2 Solid Lubricant Films

1988 ◽  
Vol 140 ◽  
Author(s):  
Michael R. Hilton ◽  
Paul D. Fleischauer
Keyword(s):  
Dark Field ◽  
Film Structure ◽  
Initial Structure ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Preparation Conditions ◽  
Transmission Electron ◽  
Deformation Processes ◽  
Sputter Deposited ◽  
Solid Lubricant Films

AbstractThe relationship between the morphologies and crystal structures of sputter-deposited MoS2 films and their lubricating capabilities is discussed. In particular, aspects of plastic deformation processes are presented. Scanning elecron microscopy (top surface and cross sectional), transmission electron microscopy (lattice imaging and dark field), and x-ray diffraction techniques were used to characterize film structure. The asdeposited morphology, which can be described in terms of zone models, was found to influence the initial nature of the wear debris and the loadbearing capabilities of the films. In many cases a highly deformed region confined to the surface of the films was found. Applied stress was found to reorient crystallites and to induce crystallization, with the degree of both processes being related to the initial structure of the film. Criteria are presented for selecting the film type and preparation conditions to fit various applications.

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

Growth and Characterization of Epitaxial NiMnSb/PtMnSb C1b Heusler alloy superlattices

1999 ◽  
Vol 14 (4) ◽  
pp. 1560-1569 ◽  
Author(s):  
F. B. Mancoff ◽  
J. F. Bobo ◽  
O. E. Richter ◽  
K. Bessho ◽  
P. R. Johnson ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Perpendicular Magnetization ◽  
Mismatch Strain ◽  
Transmission Electron ◽  
Strain Energy Minimization ◽  
Sputter Deposited ◽  
Lattice Mismatch Strain

We have sputter deposited NiMnSb/PtMnSb Heusler alloy superlattices with bilayer periods from 9–160 Å. X-ray diffraction and cross-sectional transmission electron microscopy (TEM) measurements indicate that even for short bilayer periods, the superlattices are compositionally modulated, epitaxial, and maintain the Heusler alloy C1b structure. Low- and high-angle diffraction profiles are in agreement with simulations of the superlattice peaks. TEM images reveal defects, including stacking faults, which help relieve lattice mismatch strain. Energy minimization calculations of the stacking fault density are within a factor of 3 of the density observed by TEM. The saturation magnetization of the superlattices is close to bulk PtMnSb and NiMnSb, with a tendency for perpendicular magnetization at short bilayer periods.

Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
E.J. Yun ◽  
H.G. Chun ◽  
K. Jung ◽  
D.L. Kwong ◽  
S. Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Kinetics Of

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

Structural and Magnetic Characterization of Bi-Substituted Garnet on Si and GaAs

1995 ◽  
Vol 384 ◽  
Author(s):  
Ken M. Ring ◽  
A.L. Shapiro ◽  
F. Deng ◽  
R.S. Goldman ◽  
F. Spada ◽  
...  
Keyword(s):  
Hysteresis Loops ◽  
Film Structure ◽  
X Ray Diffraction ◽  
Plan View ◽  
Transmission Electron ◽  
Potential Applications ◽  
Novel Material ◽  
Sputter Deposited ◽  
20 Nm

ABSTRACTNovel material structures that combine magneto-optic (MO) and semiconductor devices have potential applications in monolithic microwave systems and optoelectronics. We have investigated the materials issues pertaining to the film structure, interface uniformity, and magnetic/MO properties of (BiDy)3(FeGa)5O12 (Bi-DyIG) thin films sputter deposited on Si and GaAs. The rapid thermally annealed films were polycrystalline with a nominal grain size of 20 nm. The magnetic and MO properties were strongly dependent on the type of substrate such that square hysteresis loops and coercivities of 0.1 to 0.9 kOe were observed for Bi-DyIG/Si structures while Bi-DyIG/GaAs structures showed much lower coercivity values (0.03 kOe). A comparison of the magnetic properties, microstructure and substrate composition was carried out with plan-view and cross-section transmission electron microscopy, as well as electron and x-ray diffraction. The results suggest that grain orientation effects, stress, and compositional inhomogeneity due to interfacial reactions or diffusion introduced by the substrate strongly influence the magnetic and MO properties of the films.

Effect of Au distribution in NiO/Au film on the ohmic contact formation to p-type GaN

2005 ◽  
Vol 20 (2) ◽  
pp. 456-463 ◽  
Author(s):  
Jiin-Long Yang ◽  
J.S. Chen ◽  
S.J. Chang
Keyword(s):  
Electron Microscopy ◽  
Ohmic Contact ◽  
Incident Angle ◽  
Specific Contact Resistance ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Specific Contact ◽  
P Type

The distribution of Au and NiO in NiO/Au ohmic contact on p-type GaN was investigated in this work. Au (5 nm) films were deposited on p-GaN substrates by magnetron sputtering. Some of the Au films were preheated in N2 ambient to agglomerate into semi-connected structure (abbreviated by agg-Au); others were not preheated and remained the continuous (abbreviated by cont-Au). A NiO film (5 nm) was deposited on both types of samples, and all samples were subsequently annealed in N2 ambient at the temperatures ranging from 100 to 500 °C. The surface morphology, phases, and cross-sectional microstructure were investigated by scanning electron microscopy, glancing incident angle x-ray diffraction, and transmission electron microscopy. I-V measurement on the contacts indicates that only the 400 °C annealed NiO/cont-Au/p-GaN sample exhibits ohmic behavior and its specific contact resistance (ρc) is 8.93 × 10−3 Ω cm2. After annealing, Au and NiO contact to GaN individually in the NiO/agg-Au/p-GaN system while the Au and NiO layers become tangled in the NiO/cont-Au/p-GaN system. As a result, the highly tangled NiO-Au structure shall be the key to achieve the ohmic behavior for NiO/cont-Au/p-GaN system.

Single Crystal Silicon Carbide On Silicon Using A Supersonic Gas Jet Of Methylsilane

1997 ◽  
Vol 483 ◽  
Author(s):  
S. A. Ustin ◽  
C. Long ◽  
L. Lauhon ◽  
W. Ho
Keyword(s):  
Growth Rate ◽  
Growth Rates ◽  
Single Crystal Silicon ◽  
Maximum Growth ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Supersonic Molecular Beam ◽  
Transmission Electron

AbstractCubic SiC films have been grown on Si(001) and Si(111) substrates at temperatures between 600 °C and 900 °C with a single supersonic molecular beam source. Methylsilane (H3SiCH3) was used as the sole precursor with hydrogen and nitrogen as seeding gases. Optical reflectance was used to monitor in situ growth rate and macroscopic roughness. The growth rate of SiC was found to depend strongly on substrate orientation, methylsilane kinetic energy, and growth temperature. Growth rates were 1.5 to 2 times greater on Si(111) than on Si(001). The maximum growth rates achieved were 0.63 μm/hr on Si(111) and 0.375μm/hr on Si(001). Transmission electron diffraction (TED) and x-ray diffraction (XRD) were used for structural characterization. In-plane azimuthal (ø-) scans show that films on Si(001) have the correct 4-fold symmetry and that films on Si(111) have a 6-fold symmetry. The 6-fold symmetry indicates that stacking has occurred in two different sequences and double positioning boundaries have been formed. The minimum rocking curve width for SiC on Si(001) and Si(111) is 1.2°. Fourier Transform Infrared (FTIR) absorption was performed to discern the chemical bonding. Cross Sectional Transmission Electron Microscopy (XTEM) was used to image the SiC/Si interface.

scholarly journals Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

2016 ◽  
Vol 7 ◽  
pp. 1492-1500 ◽  
Author(s):  
Ionel Stavarache ◽  
Valentin Adrian Maraloiu ◽  
Petronela Prepelita ◽  
Gheorghe Iordache
Keyword(s):  
Optical Properties ◽  
Response Time ◽  
Spectral Width ◽  
Fast Response ◽  
Superior Performance ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Preparation Conditions ◽  
Photoelectric Properties ◽  
Transmission Electron

Obtaining high-quality materials, based on nanocrystals, at low temperatures is one of the current challenges for opening new paths in improving and developing functional devices in nanoscale electronics and optoelectronics. Here we report a detailed investigation of the optimization of parameters for the in situ synthesis of thin films with high Ge content (50 %) into SiO2. Crystalline Ge nanoparticles were directly formed during co-deposition of SiO2 and Ge on substrates at 300, 400 and 500 °C. Using this approach, effects related to Ge–Ge spacing are emphasized through a significant improvement of the spatial distribution of the Ge nanoparticles and by avoiding multi-step fabrication processes or Ge loss. The influence of the preparation conditions on structural, electrical and optical properties of the fabricated nanostructures was studied by X-ray diffraction, transmission electron microscopy, electrical measurements in dark or under illumination and response time investigations. Finally, we demonstrate the feasibility of the procedure by the means of an Al/n-Si/Ge:SiO2/ITO photodetector test structure. The structures, investigated at room temperature, show superior performance, high photoresponse gain, high responsivity (about 7 AW−1), fast response time (0.5 µs at 4 kHz) and great optoelectronic conversion efficiency of 900% in a wide operation bandwidth, from 450 to 1300 nm. The obtained photoresponse gain and the spectral width are attributed mainly to the high Ge content packed into a SiO2 matrix showing the direct connection between synthesis and optical properties of the tested nanostructures. Our deposition approach put in evidence the great potential of Ge nanoparticles embedded in a SiO2 matrix for hybrid integration, as they may be employed in structures and devices individually or with other materials, hence the possibility of fabricating various heterojunctions on Si, glass or flexible substrates for future development of Si-based integrated optoelectronics.

The Characterization Of Chemical Bath Deposited Cds On Single Crystal InP Substrates

1997 ◽  
Vol 485 ◽  
Author(s):  
G. M. Riker ◽  
M. M. Al-Jassim ◽  
F. S. Hasoon
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Surface Cleaning ◽  
Film Morphology ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Fine Grained ◽  
Transmission Electron ◽  
Cds Thin Films ◽  
Inp Substrates

AbstractWe have investigated CdS thin films as possible passivating window layers for InP. The films were deposited on single crystal InP by chemical bath deposition (CBD). The film thickness, as optically determined by ellipsometry, was varied from 500 to 840Å. The film morphology was investigated by high resolution scanning electron microscopy (SEM), whereas the film microstructure was studied by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM). Most of the films were fine-grained polycrystalline CdS, with some deposition conditions resulting in epitaxial growth. Cross-sectional TEM examination revealed the presence of interface contaminants. The effect of such contaminants on the film morphology and microstructure was studied, and various approaches for InP surface cleaning/treatment were investigated. The epitaxial films were determined to be hexagonal on both the (111) and (100) InP substrates; however, they were heavily faulted.

scholarly journals The Reliability Improvement of Cu Interconnection by the Control of Crystallizedα-Ta/TaNxDiffusion Barrier

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Lin Wang ◽  
Chia-Ti Wang ◽  
Wei-Chun Chen ◽  
Kuo-Tzu Peng ◽  
Ming-Hsin Yeh ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Practical Application ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Reliability Improvement ◽  
N Concentration ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Interconnection Structure

Ta/TaN bilayers have been deposited by a commercial self-ionized plasma (SIP) system. The microstructures of Ta/TaN bilayers have been systematically characterized by X-ray diffraction patterns and cross-sectional transmission electron microscopy. TaN films deposited by SIP system are amorphous. The crystalline behavior of Ta film can be controlled by the N concentration of underlying TaN film. On amorphous TaN film with low N concentration, overdeposited Ta film is the mixture ofα- andβ-phases with amorphous-like structure. Increasing the N concentration of amorphous TaN underlayer successfully leads upper Ta film to form pureα-phase. For the practical application, the electrical property and reliability of Cu interconnection structure have been investigated by utilizing various types of Ta/TaN diffusion barrier. The diffusion barrier fabricated by the combination of crystallizedα-Ta and TaN with high N concentration efficiently reduces the KRc and improves the EM resistance of Cu interconnection structure.

Reactive phase formation in sputter-deposited Ni/Al multilayer thin films

1997 ◽  
Vol 12 (1) ◽  
pp. 133-146 ◽  
Author(s):  
K. Barmak ◽  
C. Michaelsen ◽  
G. Lucadamo
Keyword(s):  
Phase Formation ◽  
Molar Ratio ◽  
X Ray Diffraction ◽  
Nucleation Kinetics ◽  
Scanning Calorimetry ◽  
Calorimetric Analysis ◽  
Transmission Electron ◽  
Nial Phase ◽  
Magnetron Sputter ◽  
Sputter Deposited

We have investigated reactive phase formation in magnetron sputter-deposited NiyAl multilayer films with a 1 : 3 molar ratio and various periodicities, L, ranging from 320 nm down to a codeposited film with zero effective periodicity. The films were studied by x-ray diffraction, differential scanning calorimetry, electrical resistance measurements, and transmission electron microscopy. We find that Ni and Al have reacted during deposition to form the B2 NiAl phase and an amorphous phase. The formation of these phases substantially reduces the driving force for subsequent reactions and explains why nucleation kinetics become important for these reactions. Depending on the periodicity, these reactions result in the formation of NiAl3 or Ni2Al9 followed by NiAl3. Detailed calorimetric analysis reveals differences in the nucleation and growth behavior of NiAl3 compared with other studies.

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